Mechanism analysis of gate-induced drain leakage in off-state n-MOSFET

An analytical expression for both band-to-band and band-trap-band indirect tunnelings is used to study the gate-induced drain leakage (GIDL) current of MOSFETs measured before and after hot-carrier stress. The voltage and temperature dependence of GIDL are characterized. Both results show that interface traps situated near the midgap participate in the conduction of GIDL, and band-trap-band indirect tunneling could be the major mechanism. This is further supported by the fact that the percentage increase in GIDL induced by hot-carrier stress is about the same as the corresponding increase in interface-trap density. On the other hand, under low-field conditions, trap-assisted Poole–Frenkle emission dominates over tunneling for temperatures even well below room temperature.     

Tests of univariate and bivariate stochastic ageing

Concepts of ageing describe how a population of units or systems improves or deteriorates with age. Many classes of life distributions are categorized and defined in the literature according to their ageing properties. An important aspect of such classifications is that the exponential distribution is nearly always a member of each class. The notion of stochastic ageing is important in any reliability analysis, and many test statistics have been developed for testing exponentiality against various ageing alternatives. This paper is an overview of these developments. The author begins with a table of ageing classes together with key references, followed by a brief discussion on the characterization of exponentiality. Test procedures are summarized, and followed by the main review. Tests of exponentiality against other alternatives are explained for randomly censored data. Finally, tests of multivariate ageing properties are listed. Some of the life classes have been derived more recently and, as far as is known, no test statistics have been proposed. On the other hand, several tests are available for some classes. Relative efficiency of a test is discussed whenever appropriate     

Ultrahigh and controllable drain current peak-to-valley ratio innegative resistance field-effect transistors with a strained InGaAschannel

Negative resistance field-effect transistor (NERFET) devices using either strained InGaAs or unstrained GaAs channel layers have been fabricated. The strained InGaAs channel NERFET's show strong negative differential resistance and large drain current peak-to-valley ratio. The peak-to-valley ratio of the InGaAs channel NERFET is more than 3000 at room temperature and larger than one million (10⁶) at 77 K. The peak-to-valley ratio is controllable by adjusting the collector voltage     

Crystallographic report: Bis[bis(N,N‐dibenzyldithiocarbamato)cadmium(II)]

The centrosymmetric structure of {Cd[S₂CN(CH₂Ph)₂]₂}₂ features both bridging and chelating dithiocarbamate ligands so that a square pyramidal S₅ coordination geometry results. Copyright © 2004 John Wiley & Sons, Ltd.     

On a dynamic fractional game

Consider a two-person zero-sum game constructed by a dynamic fractional form. We establish the upper value as well as the lower value of a dynamic fractional game, and prove that the dual gap is equal to zero under certain conditions. It is also established that the saddle point function exists in the fractional game system under certain conditions so that the equilibrium point exists in this game system.     

Effects of the H-bond donor structure on the properties of supramolecular side chain liquid crystalline polymers based on poly(3-carboxypropylmethylsiloxane-co-dimethylsiloxane)s and stilbazoles

Supramolecular side chain liquid crystalline polymers (SCLCPs) based on poly(3-carboxypropylmethylsiloxane-co-dimethylsiloxane) (PSIX, X=100, 76, 60, 41 or 23, denoting the mole percentage of 3-carboxypropylmethylsiloxane unit in the polymer) and stilbazole derivatives have been obtained through intermolecular hydrogen bonding (H-bonding) interactions between the carboxylic acid and the pyridyl moieties. The formation of H-bonding and self-assembly results in the formation of new mesogenic units, in which H-bonds function as molecular connectors. FTIR shows the existence of H-bonding in the complexes. The polymeric complexes behave as single component liquid crystalline polymers and exhibit stable and enantiotropic mesophases. The liquid crystalline properties of the supramolecular SCLCPs were studied using differential scanning calorimetry, polarizing optical microscopy and X-ray diffraction, and were found to exhibit smectic A phases with focal-conic textures. The thermal stability of the SCLCP increases on increasing the carboxylic acid content in the polysiloxane and the concentration of the stilbazole derivative in the complex. However, the thermal stability decreases on increasing the chain length of the stilbazole derivative. The crystal phase was not formed even on cooling to the glass transition temperature of the polymeric complex.     

多元整系数多项式因式分解的一种理论和算法

本文将ｔ（ｔ是大于２的整数）元整系数多项式看成为系数为ｔ－２元整系数多项式的二元多项式，建立了多元整系数多项式因式分解的一种新理论，进而得到了分解多元整系数多项式的一个有力的算法。     

一种实现光源与光纤耦合的方法

本文介绍了一种用显微镜筒与透镜构成的光学系统来实现光源与光纤耦合的方法。该方法具有光路系统小巧方便、耐用、耦合效率高等优点。     

High-speed Modulation of InGaAs: Sb-GaAs-GaAsP quantum-well vertical-cavity surface-emitting lasers with 1.27-/spl mu/m emission wavelength

1.27-/spl mu/m InGaAs: Sb-GaAs-GaAsP vertical-cavity surface-emitting lasers (VCSELs) were grown by metal-organic chemical vapor deposition and exhibited excellent performance and temperature stability. The threshold current changes from 1.8 to 1.1 mA and the slope efficiency falls less than /spl sim/35% as the temperature raised from room temperature to 70/spl deg/C. With a bias current of only 5 mA, the 3-dB modulation frequency response was measured to be 8.36 GHz, which is appropriate for 10-Gb/s operation. The maximal bandwidth is measured to be 10.7 GHz with modulation current efficiency factor (MCEF) of /spl sim/5.25 GHz/(mA)/sup 1/2/. These VCSELs also demonstrate high-speed modulation up to 10 Gb/s from 25/spl deg/C to 70/spl deg/C.