Plasma immersion ion implantation for SOI synthesis: SIMOX and ion-cut

We have demonstrated feasibility to form silicon-on-insulator (SOI) substrates using plasma immersion ion implantation (PIII) for both separation by implantation of oxygen and ion-cut. This high throughput technique can substantially lower the high cost of SOI substrates due to the simpler implanter design as well as ease of maintenance. For separation by plasma implantation of oxygen wafers, secondary ion mass spectrometry analysis and cross-sectional transmission electron micrographs show continuous buried oxide formation under a single-crystal silicon overlayer with sharp Si/SiO₂ interfaces after oxygen plasma implantation and high-temperature (1300°C) annealing. Ion-cut SOI wafer fabrication technique is implemented for the first time using PIII. The hydrogen plasma can be optimized so that only one ion species is dominant in concentration and there are minimal effects by other residual ions on the ion-cut process. The physical mechanism of hydrogen induced silicon surface layer cleavage has been investigated. An ideal gas law model of the microcavity internal pressure combined with a two-dimensional finite element fracture mechanics model is used to approximate the fracture driving force which is sufficient to overcome the silicon fracture resistance.     

宽带相干源波达方向估计的新方法

相干信号子空间处理方法（ＣＳＭ）是一种通过构造聚焦（ｆｏｃｕｓｉｎｇ）矩阵来估计宽带相干源波达方向（ＤＯＡ）的有效方法。本文基于一致聚焦的概念，给出了一种可用于任意阵列的完全聚焦方法，从而极大地改善了ＤＯＡ的估计分辨率、估计精度等性能，大大降低了估计方法的信噪比阈值。文中在最后通过计算机仿真，与ＣＳＭ方法进行了比较，验证了本方法的优良性能。     

金催化化学发光新体系——苯并吡喃化学发光分析法测定金矿中的痕量金

本文提出了一种测定矿样中痕量金的化学发光分析法,氯化6,7-二羟基-2,4-二甲基苯并吡喃-H_2O_2化学发光体系,方法的检出限为7ppb。工作曲线线性范围是10～1000ppbAu,测定的相对标准偏差小于7％。应用本法测定矿样中的金,结果良好。     

A trace class operator inequality

In this note, we generalize the inequality about the trace of positive semidefinite matrix trk(AB)?k(trA)k(trB) to Hilbert space, and obtain a relevant inequality about positive trace class operator.     

迭代的计算与估计

对高次多项式函数这类非线性映射给出了一般 n次迭代的一个计算结果 ,还讨论了一维欧氏空间中一些非多项式型映射的迭代 .在二维欧氏空间中 ,我们给出了几类特殊的非线性迭代的结果 .对于一些难以精确计算迭代表达式的映射 ,我们给出了其迭代的估计 .     

Synthesis and optoelectronic properties of silole‐containing polyfluorenes with binary structures

2,5‐Bis(2‐bromofluorene‐7‐yl)silole was prepared by a modified one‐pot synthesis with a reverse addition procedure, from which novel silole‐containing polyfluorenes with binary random and alternating structures (silole contents between 4.5 and 25% and high M_w up to 509 kDa were successfully synthesized. The well‐defined repeating unit of the alternating copolymer comprises a terfluorene and a silole ring. Optoelectronic properties including UV absorption, electrochemistry, photoluminescence (PL), and electroluminescence (EL) of the copolymers were examined. The different excitation energy transfers from fluorene to silole of the copolymers in solution and in the solid state were compared. The films of the copolymers showed silole‐dominant green emissions with high absolute PL quantum yields up to 83%. EL devices of the copolymers with a configuration of ITO/PEDOT/copolymer/Ba/Al displayed exclusive silole emissions peaked at around 543 nm and the highest EL efficiency was achieved with the alternating copolymer. Using the alternating copolymer and poly(9,9‐dioctylfluorene) as the blend‐type emissive layer, a maximum external quantum efficiency of 1.99% (four times to that of the neat film) was realized, which was a high efficiency so far reported for silole‐containing polymers. © 2007 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 45: 756–767, 2007