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231.
A thermodynamic modeling of GaN was carried out to describe the thermodynamic behavior of native defects, dopants, and carriers
(free electrons and holes) in GaN semiconductors. The compound energy model (CEM) was used. An unintentionally doped GaN was
taken as an example. Oxygen was introduced into the model as the unintentionally doped impurity, according to the practical
experimental phenomena. The energies of component compounds in the model were defined based on the results of the ab initio
calculations and adjusted to fit experimental data. The thermodynamic properties of the defects and the oxygen doped were
calculated to show the facility of the model. 相似文献
232.
本文主要解决奇异非光滑方程组的解法。应用一种新的次微分的外逆,我们提出了牛顿法和不精确牛顿法,它们的收敛性同时也得到了证明。这种方法能更容易在一引起实际应用中实现。这种方法可以看作是已存在的解非光滑方程组的方法的延伸。 相似文献
233.
Medard M. Lumetta S. Liuyang Li 《Selected Areas in Communications, IEEE Journal on》2002,20(4):822-833
We describe an architecture for an optical local area network (LAN) or metropolitan area network (MAN) access. The architecture allows for bandwidth sharing within a wavelength and is robust to both link and node failures. The architecture can be utilized with an arbitrary, link-redundant mesh network (node-redundancy is necessary only to handle all node failures), and assumes neither the use of a star topology nor the ability to embed such a topology within the physical mesh. Reservation of, bandwidth is performed in a centralized fashion at a (replicated) head end node, simplifying the implementation of complex sharing policies relative to implementation on a distributed set of routers. Unlike a router, however, the head end does not take any action on individual packets and, in particular, does not buffer packets. The architecture thus avoids the difficulties of processing packets in the optical domain while allowing for packetized shared access of wavelengths. We describe the route construction scheme and prove its ability to recover from single link and single node failures, outline a flexible medium access protocol and discuss the implications for implementing specific policies, and propose a simple implementation of the recovery protocol in terms of state machines for per-link devices 相似文献
234.
Soliton interaction under the influence of higher-order effects 总被引:6,自引:0,他引:6
In this paper, we present exact N-soliton solution by employing simple, straightforward Darboux transformation based on the Lax pair for Hirota equation, a higher-order nonlinear Schrödinger (HNLS) equation. As examples, one- and two-soliton solutions in explicit forms are given and their properties are also analyzed. A bound solution without interaction will be theoretically predicted if one can adjust frequency shift for each soliton appropriately. Further, we obtain the approximate eigenvalues by employing two-soliton solution and discuss analytically the interaction between neighboring solitons under the influence of the higher-order effects. It is shown that the combined effects of the higher-order effects can restrain the interaction between neighboring solitons to some extent. The results are proved by directly solving HNLS equation numerically. 相似文献
235.
236.
A convective flow CO laser composed of polytetrafluoroethylene discharge tubes, nickel–chromium steel components, a cupric heat exchanger and other components is described. Operating in liquid nitrogen condition, output power of 60 W has been obtained from a non-selective cavity. 相似文献
237.
凯尔文电桥是国内大学基础物理实验所开设的实验内容之一,且多为自组式.关于自组凯尔文电桥的测量精度与桥路参数精度之间的关系,有些实验教材已有推导,但尚未涉及与两低阻相邻电压接头间跨桥电阻的定量关系,不注意这一点,会给测量结果带来一定的误差.本文就实际中常用的等双臂凯尔文电桥从理论上定量地推出了这一关系,进而给出了跨桥电阻可忽略时的适当阻值. 相似文献
238.
Liyue Liu Yingge Yang Yafei Zhang 《Physica E: Low-dimensional Systems and Nanostructures》2004,24(3-4):343-348
The electrical conductivity was investigated for multi-walled carbon nanotubes (MWNTs) dissolved in chloroform and toluene, respectively. The electrical conductivity remarkably increased with increase in the content of MWNTs, which is in accordance with Archie's equation . Furthermore, a hypothesis of the electronic transport process was proposed to explain the difference between the solution and the solid compound. In addition, the temperature dependence of the electrical conductivity shows that log σ vs. 1/T exist in a good linear relationship. The activation energy of the electrical conductivity decreased with increase in concentration and an inflexion was observed at 60 °C in MWNT/toluene solution. 相似文献
239.
Analysis on the effectiveness of the 20-H rule for printed-circuit-board layout to reduce edge-radiated coupling 总被引:1,自引:0,他引:1
Montrose M.I. Er-Ping Li Hong-Fang Jin Wei-Liang Yuan 《Electromagnetic Compatibility, IEEE Transactions on》2005,47(2):227-233
This paper presents the quantified study of the electromagnetic radiation mechanism of the 20-H rule using a numerical approach that has not yet been systematically addressed. The 20-H rule is a rule-of-thumb layout technique recommended to minimize radiated fields propagating from the edges of a printed circuit board (PCB) coupling onto nearby structures. Propagating electromagnetic fields may corrupt adjacent cable assemblies, sheet metal enclosures, and aperture openings. The magnitude of this design rule is investigated using the full-wave finite-difference time-domain (FDTD) method. An analysis on whether benefits exist from use of this rule is examined and under what conditions the rule is valid when correctly implemented. The purpose of this paper is to provide insight into the validity of the 20-H rule, recognizing that every PCB will have different simulation results. FDTD is used to capture a snapshot view of field propagation. This view allows one to determine the validity of the 20-H rule at a single point of time within a dynamic structure and what may be expected when digital components are finally added to a PCB assembly, which generally negates simulated results. 相似文献
240.
Hong Wang Rong Zeng Xiuping Li 《Microwave Theory and Techniques》2005,53(2):564-570
In this paper, RF noise in 0.18-mum NMOSFETs concerning the contribution of carrier heating and hot carrier effect is characterized and analyzed in detail via a novel approach that modulates the channel carrier heating and number of hot carriers using body bias. We confirm qualitatively a negligible role of hot carrier effect on the channel noise in deep-submicrometer MOSFETs. For a device under reverse body bias (Vb), even though the increase in hot carrier population is clearly characterized by dc measurements, the device high-frequency noise is found to be irrelevant to the increase in the channel hot carriers. Experimental results show that the high-frequency noise is slightly reduced with the increase in |Vb|, and can be qualitatively explained by secondary effects such as the suppression of nonequilibrium channel noise and substrate induced noise. The reduction of NFmin and Rn with the increase in |Vb| may provide a possible methodology to finely adjust the device high-frequency noise performance for circuit design 相似文献