羊八井太阳中子望远镜和中子监测器对2005年1月20日GLE事件的探测

西藏羊八井位于东经90.53°, 北纬30.11°, 海拔4310m, 垂直地磁截止刚度14.1GV. 2005年1月20日羊八井太阳中子望远镜和中子监测器探测到与X7.1/2b太阳耀斑相关的GLE事件, 其中太阳中子望远镜能量>40MeV的能道在5min(07:00—07:05UT)和20min(07:00—07:20UT)的时间间隔内计数率增长的统计显著性分别是3.7σ和6.0σ, 同时羊八井中子监测器也探测到计数率的增长,初始时间为06:51—06:52UT. 观测表明在这次GLE事件中太阳质子可被加速到能量大于10GeV.     

热熔合反应合成超重核产生截面的同位素依赖性

通过在形成超重核的重离子俘获和熔合过程中引入位垒分布函数的方法对双核模型做了进一步发展. 超重核形成过程中的俘获、熔合和蒸发3个阶段分别采用了半经验的耦合道模型、数值求解主方程和统计蒸发模型的方法来描述. 计算了近年来Dubna小组利用热熔合反应⁴⁸Ca(²⁴³Am, 3n—5n)^288—286115和⁴⁸Ca(²⁴⁸Cm, 3n—5n)^293—291116合成超重新核素的蒸发余核激发函数. 系统分析了⁴⁸Ca轰击锕系元素U,Np,Pu,Am,Cm合成超重核Z=112—116产生截面的同位素依赖性. 给出了合成超重新核素最佳的弹靶组合和入射能量, 即有最大的超重核产生截面. 计算说明, 壳修正能和中子分离能是影响超重核生成截面产生同位素依赖性的主要因素.     

ZnTe（ZnTe：Cu）多晶薄膜的XPS研究

用共蒸发法在室温下制备了ZnTe及ZnTe：Cu多晶薄膜，测量了电导率温度曲线，发现不掺杂的ZnTe薄膜的暗电导随温度的增加而线形增加，呈常规的半导体材料特征；掺Cu的ZnTe薄膜在温度较低时，lnσ随温度升高而缓慢增加，随后缓慢降低，达到一极小值，当温度继续升高时又陡然增加，呈现异常现象。用XPS研究了N2气氛下退火前后表面状态，发现不掺Cu的ZnTe薄膜呈现富Te现象。掺Cu后Te氧化明显，以ZnTe形式存在的Te明显减少；ZnTe：Cu薄膜中Zn的含量在退火前后变化明显，退火前，Zn主要以ZnTe形式存在，退火后Zn原子向表面扩散，使表面成分更加均匀，谱峰变宽；退火时，部分Cu原子进入晶格形成CuxTe相，引起载流子浓度变化，导致ZnTe：Cu多晶薄膜的电导温度关系异常。     

Single-Photon Detection at Telecom Wavelengths

A single-photon detector based on an InGaAs avalanche photodiode has been developed for use at telecom wavelengths. A suitable delay and sampling gate modulation circuit are used to prevent positive and negative transient pulses from influencing the detection of true photon induced avalanches. A monostable trigger circuit eliminates the influence of avalanche peak jitter, and a dead time modulation feedback control circuit decreases the afterpulsing. From performance tests we lind that at the optimum operation point, the quantum efficiency is 12% and the dark count rate 1.5 × 10^-6 ns^-1, with a detection rate of 500 kHz.     

Nuclear Potential and Fusion Cross Sections for Synthesizing Super-Heavy Elements in Di-nuclear Systems

A double foMing method with simplified Skyrme-type nucleon nucleon interaction is used to calculate the nuclear interaction potential between two nuclei. The calculation is performed in tip-to-tip orientation of the two nuclei if they are deformed. Based on this method, the potential energy surfaces~ the fusion probabilities and the evaporation residue cross sections for some cold fusion reactions leading to super-heavy elements within di-nuclear system model are evaluated. It is indicated that after the improvement, the exponential decreasing systematics of the fusion probability with increasing charge number of projectile on the Pb based target become better and the evaporation residue cross sections are in better agreement with the experimental data.     

Mechanism of Striation in Dielectric Barrier Discharge

The mechanism of striations in dielectric barrier discharge in pure neon is studied by a two-dimensional particle- in-cell/Monte Carlo collision （PIC-MCC） model. It is shown that the striations appear in the plasma background, and non-uniform electrical field resulting from ionization and the negative wall charge appear on the dielectric layer above the anode. The sustainment of striations is a non-local kinetic effect of electrons in a stratified field controlled by non-elastic impact with neutral gases. The striations in the transient dielectric barrier discharge are similar to those in dc positive column discharge.     

GaN MOS-HEMT Using Ultra-Thin A1203 Dielectric Grown by Atomic Layer Deposition

We report a GaN metal-oxide-semiconductor high electron mobility transistor （MOS-HEMT） with atomic layer deposited （ALD） Al2O3 gate dielectric. Based on the previous work [Appl. Phys. Lett. 86 （2005） 063501] of Ye et al. by decreasing the thickness of the gate oxide to 3.5nm and optimizing the device fabrication process, the device with maximum transconductance of 150mS/mm is produced and discussed in comparison with the result of lOOmS/mm of Ye et al. The corresponding drain current density in the 0.8-μm-gate-length MOS-HEMT is 800mA/mm at the gate bias of 3.0 V. The gate leakage is two orders of magnitude lower than that of the conventional A1GaN/GaN HEMT. The excellent characteristics of this novel MOS-HEMT device structure with ALD Al2O3 gate dielectric are presented.     

Stable Electron Field Emission from CeO2 Nanowires by Hydrothermal Method

CeO2 nanowires are successful synthesized by hydrothermal method and their field emission （FE） properties are investigated. The turn-on electric field is 5.8 V/μm at an emitter-anode spacing of 700μm. The FE current is stable and the current fluctuations are less than 3% over 5 h. All the plotted Fowler-Nordheim curves yield straight lines, which are in agreement with the Fowler-Nordheim theory. The relationship between the field enhancement factor β and the emitter-anode spacing d follows a universal equation. Our results imply that the CeO2 nanowires are promising materials for fabricating FE cathodes.     

Possible Way to Synthesize Superheavy Element Z=117

Within the framework of the dinuclear system model, the production of superheavy element Z = 117 in possible projectile-target combinations is analysed systematically. The calculated results show that the production cross sections are strongly dependent on the reaction systems. Optimal combinations, corresponding excitation energies and evaporation channels are proposed, such as the isotopes^248.249 Bk in ^48 Ca induced reactions in 3n evaporation channels and the reactions ^45Sc＋246.248Cm in 3n and 4n channels, and the system ^51 V＋ 244pu in 3n channel.     

Ab Initio Comparative Study of Zincblende and Wurtzite ZnO

By employing the first-principles pseudopotential plane-wave method, the physical properties of zincblende ZnO are investigated in comparison with those of the common wurtzite structure. Zincblende ZnO is predicted to be a direct gap semiconductor. Compared to the wurtzite structure, the zincblende ZnO is characterized by smaller bandgap and pressure coefficient, larger electron effective mass, increasing static dielectric constants and more covalent bonding. Furthermore, the optical properties including dielectric function and energy loss function of zincblende ZnO were obtained and analysed with some features. These aspects reveal promising applications of zincblende ZnO in optoelectronic devices.