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研制出了用于计算氚投料量在FEB聚变堆各个子系统中的分布及其随时间变化的数值模拟程序包SWITRIM。通过近5年的使用，表明其运行良好、计算结果可靠。用SWITRIM数值模拟研究了聚变堆起动过程中的“氚坑深度和氚坑时间”新现象。简单介绍了SWITRIM程序包的组成和用户使用说明以及最新的运用等。     

Sansalvamide A固相合成新方法

报道了Pd催化丁基二乙基硅烷树脂与N-Boc-4-溴代苯丙氨酸甲酯直接反应形成Si—Ar键一步构建出硅基连接分子的新方法, 并采用Boc策略增长肽链, 以PyBOP (benzotriazole-1-yl-oxy-tris-pyrrolidino-phosphonium hexafluoro- phosphate)为环合剂固相合成了sansalvamide A.     

Performance evaluation of fiber Bragg grating sensors by digital holographic technique, strain gauge measurement

In view of the growing interest for non-destructive tests of materials, geodynamical monitoring and in general remote sensing, there is a great effort to bring practical optical sensors from research labs to industrial and environmental applications. In this paper, we employ digital holographic technique as an efficient tool for evaluating the strain measurement capability of fiber Bragg gratings (FBG). A cantilever beam has been employed as a test structure under loading test. The strain measurements results obtained by fiber-based sensors have been compared to those obtained by using full-field digital holographic technique and point-wise strain gauge sensors glued on the same cantilever beam. A simple theoretical model is also presented to interpret and compare the experimental results coming from different techniques.     

一种基于数字电视系统的数据传输技术研究

数字电视是较为成熟和先进的信息传输技术，详细介绍一种通过数字电视系统传输数据的方法。     

Primitive rispetto all’ oscillazione

We study the real valued functions having a primitive with respect to the oscillation or a primitive with respect to the oscillation up to anegligible set.

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Supported by MURST of Italy.     

两指标双F统计过程控制图

当产品质量指标服从二元正态分时,可用T2控制图与Λ控制图联合判断产品生产的过程是否处于受控状态。本文利用T2统计量与F统计量、Λ统计量与F统计量之间的关系,得到了两指标情形下两类基于F分布统计量的统计过程控制图,简称双F统计过程控制图,并给出了控制图应用实例。     

Total Dose Radiation Tolerance of Phase Change Memory Cell with GeSbTe Alloy

Phase change memory （PCM） cell array is fabricated by a standard complementary metal-oxide-semiconductor process and the subsequent special fabrication technique. A chalcogenide Ge2Sb2Te5 film in thickness 50hm deposited by rf magnetron sputtering is used as storage medium for the PCM cell. Large snap-back effect is observed in current-voltage characteristics, indicating the phase transition from an amorphous state （higher resistance state） to the crystalline state （lower resistance state）. The resistance of amorphous state is two orders of magnitude larger than that of the crystalline state from the resistance measurement, and the threshold current needed for phase transition of our fabricated PCM cell array is very low （only several μA）. An x-ray total dose radiation test is carried out on the PCM cell array and the results show that this kind of PCM cell has excellent total dose radiation tolerance with total dose up to 2 ×10^6 rad（Si）, which makes it attractive for space-based applications.     

一种新型2×2 S0I热光开关

设计并制作了一种新型的SOI 2×2马赫一曾德（MZ）热光开关。这种光开关采用了深刻蚀结构的配对多模干涉耦合器，同时，为了保证单模传输和调制，在连接波导和调制臂区域采用了浅刻蚀结构。深刻蚀结构增强了多模干涉耦合器对光场的限制，有利于自映像质量的提高，从而减少了自映像损耗和不均衡度，同时也提高了制作容差。基于强限制配对干涉耦合器的新型热光开关，其插入损耗为-11．0dB，其中包括光纤波导耦合损耗4．3dB，上升和下降开关时间分别为3．5μs和8．8μs。     

Giant shot-like voltage noise in high current density Nb–AlOx–Nb superconducting tunnel junctions

The flat voltage noise component of current biased, high-transparency Nb/AlO_x/Nb superconducting tunnel junctions has been investigated at frequencies up to 70 kHz. Several aspects of the analyzed phenomena suggest the presence of current noise effects induced by the discreteness of the charge carriers. At subgap voltages, where excess currents occur, a behavior coherent with a multiple Andreev reflection-assisted transport through the tunnel barrier has been found. However, the measured charge values exceed any theoretical prediction.     

Involutions for upper triangular matrix algebras

In this paper we describe completely the involutions of the first kind of the algebra UT_n(F) of n×n upper triangular matrices. Every such involution can be extended uniquely to an involution on the full matrix algebra. We describe the equivalence classes of involutions on the upper triangular matrices. There are two distinct classes for UT_n(F) when n is even and a single class in the odd case.Furthermore we consider the algebra UT₂(F) of the 2×2 upper triangular matrices over an infinite field F of characteristic different from 2. For every involution *, we describe the *-polynomial identities for this algebra. We exhibit bases of the corresponding ideals of identities with involution, and compute the Hilbert (or Poincaré) series and the codimension sequences of the respective relatively free algebras.Then we consider the *-polynomial identities for the algebra UT₃(F) over a field of characteristic zero. We describe a finite generating set of the ideal of *-identities for this algebra. These generators are quite a few, and their degrees are relatively large. It seems to us that the problem of describing the *-identities for the algebra UT_n(F) of the n×n upper triangular matrices may be much more complicated than in the case of ordinary polynomial identities.