用Josephson结电子模拟器测量磁通量子2e/h

介绍用Josephson结电子模拟器在政党温度下，模拟测量磁通量子2e/h，用模拟器来研究Josephosn结的特性。该实验可作为普通物理实验中课题设计实验的一个内容。     

光化学气相淀积SiGe/Si材料的机制分析

本文对光化学气相淀积SiGe/Si过程中气相反应机制和表面反应历程进行了分析和讨论.利用表面反应动力学的有关理论,结合光化学气相淀积的特点,推导出光化学气相淀积SiGe/Si过程中的生长速率和生长压力的关系.并给出该理论结果和实际实验结果的比较.     

基于虚拟仪器的人体皮肤组织吸收光谱检测平台

本文运用光电无损检测技术,采用皮外反射式测量方法,通过光纤光谱仪和虚拟仪器构建人体皮肤组织吸收光谱检测平台.该平台适合于光子-组织相互作用基础研究及激光美容临床检测,可协助医师进行病理诊断和病变程度判别.文中给出几个吸收光谱的检测结果.     

Structure and magnetic properties of nanocrystalline ferromagnets (II)

The role of magnetoelastic coupling effects in nanocrystalline ferromagnets is investigated by means of high-field magnetization and Doppler-broadening spectrum measurements. For the nanocrystalline Fe_{73 5}Cu₁Nb₃Si_13.5B₉ alloy, the results show that the pinning effects resulting from the quasidislocation dipole intensely influence the movement of domain wall; by coupling with the magnetostriction the defects-induced stress fields determine the magnetic properties at the early stage of crystallization. In view of the effective anisotropy and magnetoelastic coupling energy the optimal annealing conditions of alloys are discussed.     

利用梯度方向信息的随机Hough变换

针对随机Ｈｏｕｇｈ变换（ＲＨＴ）在处理复杂图像随机采样造成的大量无效积累提出一种改进的用于直线检测的ＲＨＴ，较发地解决了无效果累积问题，并使改进后的算法具有计算速度更快，占用内存更少以及检测性能更好等优点。     

分子振动态及其跃迁的激光相干控制

讨论了激光合成相干叠加态的原理及其性质 ,针对 XY2 型分子 ,证明了合成局域模振动的可行性 ,然后给出相干叠加态的跃迁几率特征 ,发现它仍表现出相干的特性 ,对之进行分析研究表明 ,分子的振动态具有可控性 ,态跃迁几率具有可控性。     

弱1—凸对策及其解的性质

本文提出了一类特殊的ｎ人合作对策模型─—弱１—凸对策，研究了弱１—凸对策的解的性质，并证明弱１—凸对策的解满足所有常见的公理化特征．     

线状锗等离子体X射线线谱的时间分辨测量

用自行研制的X射线条纹晶体谱仪首次测量了线状锗等离子体的X射线时间分辨谱。给出了类Ne-锗L线共振线的时间演化过程,并用类Ne-锗L线共振线与其双电子俘获伴线的相对强度比粗估了锗等离子体的电子温度及其随时间的变化,实验给出了X光激光增益区介质的电子温度为400～760eV,同时给出了电子温度保持相对恒定的时间不小于90ps(电子温度变化小于2％)。     

Selective saturation and inversion of multiple resonances in high-resolution solid-state 13C experiments using slow spinning CP/MAS and tailored DANTE pulse sequences.

Taking advantage of the long 13C T1 values generally encountered in solids, selective saturation and inversion of more than one resonance in 13C CP/MAS experiments can be achieved by sequentially applying several DANTE pulse sequences centered at different transmitter frequency offsets. A new selective saturation pulse sequence is introduced composed of a series of 90 degrees DANTE sequences separated by interrupted decoupling periods during which the selected resonance is destroyed. Applications of this method, including the simplification of the measurement of the principal values of the 13C chemical shift tensor under slow MAS conditions, are described. The determination of the aromaticity of coal using a relatively slow MAS rate is also described.     

A 0.1-μm delta-doped MOSFET fabricated with post-low-energyimplanting selective epitaxy

A simple fabrication technology for delta-doped MOSFETs, named post-low-energy implanting selective epitaxy (PLISE) is presented. The PLISE technology needs no additional photo-lithography mask, deposition step or etching step even for CMOS devices. The only additional step is growing undoped epitaxial channel layers by UHV-CVD after the channel implantation. With this technology, delta-doped NMOSFETs with 0.1-μm gate length were successfully fabricated. By optimizing the epi-layer thickness and the channel doping level, short-channel effects are suppressed enough to achieve 0.1-μm gate length. Moreover, the junction capacitance at zero bias is reduced by 50%