Comparison between the effects of positive noncatastrophic HBM ESDstress in n-channel and p-channel power MOSFETs

The effect of noncatastrophic positive human body model (HBM) electrostatic discharge (ESD) stress on n-channel power MOSFETs is radically different from that on p-channel MOSFETs. In n-channel transistors, the stress causes negative shifts of the current-voltage characteristics indicative of positive charge trapping in the gate oxide. In p-channel transistors, the stress increases the drain-to-source leakage current, probably due to localized avalanche electron injection from the p-doped drain     

Improved HF modem using convolutional coding

The paper describes the design of a digitally implemented modem for use over HF (2-30 MHz) radio channels. As a completely digital approach offers the prospect of a number of significant improvements, a new digital multifrequency-shift-keying (MFSK) modem has been developed that employs a novel digital processing procedure termed code-assisted bit synchronisation (CABS). Signal detection is achieved via a set of noncoherent correlators, whilst symbol synchronisation and error correction are performed using a soft-decision Viterbi decoder. Practical tests of modem show that it operates effectively under both additive white Gaussian noise and real HF channel conditions     

89-GHz fT room-temperature silicon MOSFETs

The authors report the implementation of deep-submicrometer Si MOSFETs that at room temperature have a unity-current-gain cutoff frequency (f_T) of 89 GHz, for a drain-to-source bias of 1.5 V, a gate-to-source bias of 1 V, a gate oxide thickness of 40 Å, and a channel length of 0.15 μm. The fabrication procedure is mostly conventional, except for the e-beam defined gates. The speed performance is achieved through an intrinsic transit time of only 1.8 ps across the active device region     

Finite element method in the solution of the Euler and Navier-Stokes equations for internal flow

Finite element solutions of the Euler and Navier-Stokes equations are presented, using a simple dissipation model. The discretization is based on the weak-Galerkin weighted residual method and equal interpolation functions for all the unknowns are permitted. The nonlinearity is iterated upon using a Newton method and at each iteration the linear algebraic system is solved by a direct solver with all unknowns fully coupled. Results are presented for two-dimensional transonic inviscid flows and two- and three-dimensional incompressible viscous flows. Convergence of the algorithm is shown to be quadratic, reaching machine accuracy in very few iterations. The inviscid results demonstrate the existence of nonunique numerical solutions to the steady Euler equations.     

Interpretation of the polyelectrolyte and antipolyelectrolyte effects of poly(N‐vinylimidazole‐co‐sodium styrenesulfonate) hydrogels

Hydrogels of N‐vinylimidazole (VI) and sodium styrenesulfonate (SSS) were synthesized in aqueous solution by radical crosslinking copolymerization with N,N′‐methylene‐bis(acrylamide) as crosslinker. Swelling in several saline solutions was measured for hydrogel samples synthesized with different comonomer concentrations (C_T = 10, 25, or 40%) and with SSS mole fractions covering a broad range (f_SSS = 0–0.7), while the crosslinker ratio was 2 wt % in all cases. The degree of swelling in aqueous solution with a specific ionic strength (μ), plotted versus the SSS composition of the feed, shows a minimum for any set of samples synthesized with a fixed C_T. The dependence of swelling on μ shows both polyelectrolyte (f_SSS beyond the minimum) and antipolyelectrolyte behaviors (in the low f_SSS limit). It was found that the nonGaussian factor of the crosslinking density and the polymer‐solvent interaction parameter increase with f_SSS for any C_T. Moreover, in the low f_SSS limit, the osmotic swelling pressure is governed not only by the ionic contribution, but also by the polymer‐solvent mixing and, the concentration of mobile counterions inside the gel is not proportional to the net fixed charge but to the addition of cationic and anionic side groups, what discards the formation of ionic pairs. The antipolyelectrolyte effect is interpreted as due to the increasing protonation of VI as μ goes up. © 2007 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 45: 1683–1693, 2007     

On 2-ciass field towers of some imaginary quadratic number fields

We construct an infinite family of imaginary quadratic number fields with 2-class groups of type (2, 2, 2) whose Hilbert 2-class fields are finite.     

Influence of series resistance in oxide parameter extraction data from accelerated tests

Accelerated reliability tests on thin oxide capacitors can be affected by series resistance effects at high stress conditions. The purpose of this work is to point out such problems both with measurements and simulations. It is shown that breakdown electric field is overestimated. Due to the resulting nonuniform stress, charge to breakdown density is underestimated if the test structure layout is not accurately designed. In any case the series resistance effects can have an undesirable impact on the reliability evaluation of thin dielectrics.     

Gain equalization by mitigating self-filtering effect in a chain ofcascaded EDFA's for WDM transmissions

A simple method of alternatively using high-inversion and moderate-inversion erbium-doped fiber amplifiers (EDFA's) in an optical amplifier chain is presented to mitigate the self-filtering effect and equalize both signal power and signal-to-noise ratio (SNR) of multiple wavelength channels in wavelength-division multiplexing (WDM) transmission systems. The performance of the compensated system with alternatively used high- and moderate-inversion amplifiers is compared with the uncompensated ones where only moderate- or high-inversion amplifiers are employed. The result shows that the compensated system has a flatter gain profile, a lesser signal power spread, and SNR degradation     

Fourier-transform-limited pulses from gain-switched distributed-Bragg-reflector lasers using simultaneous modulation of gain and phase sections

Fourier-transform-limited pulses ( Delta tau . Delta nu approximately=0.35) have been obtained from a microwave-modulated DBR laser at 1.56 mu m. The chirp of the gain-switched pulse is compensated for by applying a fraction of the microwave signal to the phase section, thereby creating an instantaneous frequency shift of opposite sign. The generation of short coherent pulses from such a monolithic source can be of great interest for long haul soliton transmission.<>