DSP--数字化时代的基因芯片

DSP是当今发展最为迅速的和最有发展前景的技术之一。与普通CPU和MCU相比 ,DSP在数字信号处理方面有着无可比拟的优势 ,特别适合网络、通信、控制等需要进行大量数字信号处理的应用场合。今天DSP已经成为通信、计算机、网络、工业控制以及家用电器等电子产品中不可或缺的基础器件 ,DSP在通信、计算机、网络、工业控制以及消费类电子产品等领域有着非常广泛的应用 ,本文阐述了DSP的特点、应用和市场以及DSP技术的发展前景。     

High-efficiency LEDs of 1.6–2.4 µm spectral range for medical diagnostics and environment monitoring

High efficient LED structures covering the spectral range of 1.6–2.4 μm have been developed on the basis of GaSb and its solid solutions. The electroluminescent characteristics and their temperature and current dependences have been studied. The radiative and nonradiative recombination mechanisms and their effect on the quantum efficiency have been investigated. A quantum efficiency of 40–60% has been obtained in the quasi-steady mode at room temperature. A short-pulse optical power of 170 mW was reached. __________ Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 37, No. 8, 2003, pp. 996–1009. Original Russian Text Copyright ? 2003 by Stoyanov, Zhurtanov, Astakhova, Imenkov, Yakovlev.     

Experimental real-time detector of GSM terminals

The authors present an experimental real-time GSM terminal detector, to be installed in a restricted area. The detector triggers terminal signaling, which can be captured.     

Study of Disk-Loaded Waveguide Filled with Plasma

Recently disk-loaded waveguide has been widely used in high-power traveling wave tubes (HPTWT). It has been shown in many experiments that the interaction efficiency and output power can be increased greatly by injecting plasma into the vacuum microwave device. Using field analysis, the dispersion characteristics and the interaction impedance of the disk-loaded waveguide filled with plasma are analyzed in a strong longitudinal magnetic field. In conclusion, the frequency of the TM₀₁ mode increases as the density of the plasma increases. It also can be found when the plasma density increases to a large scale, the TM₀₁ mode of the disk-loaded waveguide overlaps the TG mode, these two modes couple each other and form the new hybrid modes.     

A multiwinding modeling method for high frequency transformers and inductors

This paper presents a method to obtain an electric model for transformers and inductors, including both frequency and geometry effects in the windings, which can be linked with existing core models. One-dimensional distributions for magnetic and electric fields are assumed, and from Maxwell's equations an equivalent electric circuit is easily obtained. This equivalent circuit has been included in analog simulators (Spice, AnalogWorkBench, Saber ...), and comparisons between measured and simulated results are shown, both in time domain and in AC sweep, which verify the model accuracy. The model described in this paper allows designers to deal with key issues in the design of high-frequency magnetic components (copper losses, leakage inductance, skin and proximity effects) by using analog simulators, which are usually more familiar to them than finite-element analysis tools.     

Temperature effects on surface activity and application in oxidation of toluene derivatives of CTAB-SDS with KMnO4

The γ_cmc values of CTAB-SDS decrease from 63.67 mN/m at 10‡C to 36.38 mN/m at 90‡C, slightly lower than those of either CTAB or SDS. Correspondingly, the CMC of CTAB-SDS decreases almost by half. The increase of surface activity of CTAB-SDS can be attributed to the relatively weak electrostatic interaction at high temperature, which is supported by the increase of solubility of CTAB-SDS with rise in temperature. Catalytic effect on oxidation of toluene derivatives with potassium permanganate follows the order CTAB-SDS > SDS > CTAB. This is not caused by the dissociative effect of CTAB-SDS with low surface activity at low temperature, as seen from the fact that almost all oxidative products can be retrieved for different toluene derivatives and surfactants by mimicking the conditions of reaction. In the emulsifications of toluene derivatives at 90‡C, the time that turbid water layers of surfactant solutions take to become clear is the same as that of the catalytic effect on oxidation of toluene derivatives. Thus, it can be inferred that surfactants can improve the oxidation yields of toluene derivatives by increasing the contact between two reacting phases.     

Optical-transmission characteristics of optical-fiber cables and installed optical-fiber cable networks for WDM systems

Many cables containing 1.3-/spl mu/m zero-dispersion single-mode (SM) optical fibers are installed in trunk and access networks. Recently, there have been a number of studies on wavelength-division-multiplexing (WDM) systems designed to increase transmission capacity and flexibility. If we can construct WDM systems using SM optical-fiber cable networks designed to transmit using wavelengths in the 1.3-/spl mu/m window (O-band), this will prove very effective in reducing construction costs. It is therefore important to examine the wavelength dependence of the transmission characteristics of SM optical-fiber cables and networks that have already been installed and in which several optical fibers are joined. In this paper, we describe the measured optical characteristics of SM optical-fiber cables and installed optical-fiber cable networks at various wavelengths. The optical characteristics were stable in the 1.46 to 1.625-/spl mu/m wavelength range and we confirmed that the installed SM optical-fiber cable networks could be used for WDM system applications.     

基于SIP的视频会议系统研究

根据IETF SIPPING工作组提出的集中式会议模型，设计并实现了基于SIP的视频会议系统。该系统各部分可分别设计，具有良好的可扩展性。详细介绍了此系统的结构和工作原理。     

全IP体系的无缝连接需求和实现方法

在全IP体系下,无缝连接将保证用户在跨越同构和异构网络时业务体验的连续性和一致性.无缝连接包括无缝切换和协同两方面内容,需要情景管理、公共无线资源管理、媒体转换以及网络协同等功能实体,从终端的角度看,无缝连接需要基于配置文件、情景和应用自动完成连接的建立、更新和修改.以UMA为例说明了无缝连接的应用和价值.     

1/f noise in large-area Hg<Subscript>1−x</Subscript>Cd<Subscript>x</Subscript>Te photodiodes

The 1/f noise in photovoltaic (PV) molecular-beam epitaxy (MBE)-grown Hg_1−xCd_xTe double-layer planar heterostructure (DLPH) large-area detectors is a critical noise component with the potential to limit sensitivity of the cross-track infrared sounder (CrIS) instrument. Therefore, an understanding of the origins and mechanisms of noise currents in these PV detectors is of great importance. Excess low-frequency noise has been measured on a number of 1000-μm-diameter active-area detectors of varying “quality” (i.e., having a wide range of I-V characteristics at 78 K). The 1/f noise was measured as a function of cut-off wavelength under illuminated conditions. For short-wave infrared (SWIR) detectors at 98 K, minimal 1/f noise was measured when the total current was dominated by diffusion with white noise spectral density in the mid-10⁻¹⁵A/Hz^1/2 range. For SWIR detectors dominated by other than diffusion current, the ratio, α, of the noise current in unit bandwidth i_n(f = 1 Hz, V_d = −60 mV, and Δf = 1 Hz) to dark current I_d(V_d = −60 mV) was α_SW-d = i_n/I_d ∼ 1 × 10⁻³. The SWIR detectors measured at 0 mV under illuminated conditions had median α_SW-P = i_n/I_ph ∼ 7 × 10⁻⁶. For mid-wave infrared (MWIR) detectors, α_MW-d = i_n/I_d ∼ 2 × 10⁻⁴, due to tunneling current contributions to the 1/f noise. Measurements on forty-nine 1000-μm-diameter MWIR detectors under illuminated conditions at 98 K and −60 mV bias resulted in α_MW-P = i_n/I_ph = 4.16 ± 1.69 × 10⁻⁶. A significant point to note is that the photo-induced noise spectra are nearly identical at 0 mV and 100 mV reverse bias, with a noise-current-to-photocurrent ratio, α_MW-P, in the mid 10⁻⁶ range. For long-wave infrared (LWIR) detectors measured at 78 K, the ratio, α_LW-d = i_n/I_d ∼ 6 × 10⁻⁶, for the best performers. The majority of the LWIR detectors exhibited α_LW-d on the order of 2 × 10⁻⁵. The photo-induced 1/f noise had α_LW-P = i_n/I_ph ∼ 5 × 10⁻⁶. The value of the noise-current-to-dark-current ratio, α appears to increase with increasing bandgap. It is not clear if this is due to different current mechanisms impacting 1/f noise performance. Measurements on detectors of different bandgaps are needed at temperatures where diffusion current is the dominant current. Excess low-frequency noise measurements made as a function of detector reverse bias indicate 1/f noise may result primarily from the dominant current mechanism at each particular bias. The 1/f noise was not a direct function of the applied bias.