Personal telecommunication radiation safety and the precautionary principle

The approach to risk management for RF and microwave radiation has been to establish guidelines for maximum permissible levels of exposure. These guidelines are based on evaluations of the relevant scientific literature and, with safety margins to account for uncertainties and gaps in scientific knowledge, offer a significant level of protection against established hazards of RF and microwave radiation for short-term exposures. One can argue, on this basis, that the precautionary principle - specifically, safety factors -have been used to guide the making and promulgation of existing permissible-exposure standards for RF and microwave radiation. Therefore, discussions on the appropriateness of the precautionary principle for RF radiation may be "much ado about nothing". Clearly, this approach to "pre caution" neither has stifled technological development, nor has it helped to enforce the acceptance of zero risk, but it provided a basis for action when science was unable to give a clear answer.     

A multiwinding modeling method for high frequency transformers and inductors

This paper presents a method to obtain an electric model for transformers and inductors, including both frequency and geometry effects in the windings, which can be linked with existing core models. One-dimensional distributions for magnetic and electric fields are assumed, and from Maxwell's equations an equivalent electric circuit is easily obtained. This equivalent circuit has been included in analog simulators (Spice, AnalogWorkBench, Saber ...), and comparisons between measured and simulated results are shown, both in time domain and in AC sweep, which verify the model accuracy. The model described in this paper allows designers to deal with key issues in the design of high-frequency magnetic components (copper losses, leakage inductance, skin and proximity effects) by using analog simulators, which are usually more familiar to them than finite-element analysis tools.     

Intelligent process analytics for CRM

Many organisations use decision models in their processes such as tables or trees to provide decision support to their operational divisions. For example, in fault management, customer contact centre operators usually use a decision model in the form of prescribed interviews. Based on the answers given by customers, the operator navigates through the decision model to reach an assessment of the problem. In order to achieve customer satisfaction and operational excellence, it is very important to constantly monitor the performance of a decision model not only on an overall level, but also on the level of individual decisions. In this paper we present a configurable business process analytics tool, known as the intelligent Universal Service Management System, that constantly monitors decision data and is capable of optimising the decisions based on high-level business objectives. We explain the various features of the software and show how it can be used to optimise decision processes. We also show how we can easily provide a customised version to monitor the performance of provision processes.     

Profile-Driven Component Placement for Cluster-Based Online Services

The growth of the Internet and of various intranets has spawned a wealth of online services, most of which are implemented on local-area clusters using remote invocation (for example, remote procedure call/remote method invocation) among manually placed application components. Component placement can be a significant challenge for large-scale services, particularly when application resource needs are workload dependent. Automatic component placement has the potential to maximize overall system throughput. The key idea is to construct (offline) a mapping between input workload and individual-component resource consumption. Such mappings, called component profiles, then support high-performance placement. Preliminary results on an online auction benchmark based on J2EE (Java 2 Platform, Enterprise Edition) suggest that profile-driven tools can identify placements that achieve near-optimal overall throughput.     

Optical-transmission characteristics of optical-fiber cables and installed optical-fiber cable networks for WDM systems

Many cables containing 1.3-/spl mu/m zero-dispersion single-mode (SM) optical fibers are installed in trunk and access networks. Recently, there have been a number of studies on wavelength-division-multiplexing (WDM) systems designed to increase transmission capacity and flexibility. If we can construct WDM systems using SM optical-fiber cable networks designed to transmit using wavelengths in the 1.3-/spl mu/m window (O-band), this will prove very effective in reducing construction costs. It is therefore important to examine the wavelength dependence of the transmission characteristics of SM optical-fiber cables and networks that have already been installed and in which several optical fibers are joined. In this paper, we describe the measured optical characteristics of SM optical-fiber cables and installed optical-fiber cable networks at various wavelengths. The optical characteristics were stable in the 1.46 to 1.625-/spl mu/m wavelength range and we confirmed that the installed SM optical-fiber cable networks could be used for WDM system applications.     

Minimax estimation of deterministic parameters in linear models with a random model matrix

We consider the problem of estimating an unknown deterministic parameter vector in a linear model with a random model matrix, with known second-order statistics. We first seek the linear estimator that minimizes the worst-case mean-squared error (MSE) across all parameter vectors whose (possibly weighted) norm is bounded above. We show that the minimax MSE estimator can be found by solving a semidefinite programming problem and develop necessary and sufficient optimality conditions on the minimax MSE estimator. Using these conditions, we derive closed-form expressions for the minimax MSE estimator in some special cases. We then demonstrate, through examples, that the minimax MSE estimator can improve the performance over both a Baysian approach and a least-squares method. We then consider the case in which the norm of the parameter vector is also bounded below. Since the minimax MSE approach cannot account for a nonzero lower bound, we consider, in this case, a minimax regret method in which we seek the estimator that minimizes the worst-case difference between the MSE attainable using a linear estimator that does not know the parameter vector, and the optimal MSE attained using a linear estimator that knows the parameter vector. For analytical tractability, we restrict our attention to the scalar case and develop a closed-form expression for the minimax regret estimator.     

1/f noise in large-area Hg<Subscript>1−x</Subscript>Cd<Subscript>x</Subscript>Te photodiodes

The 1/f noise in photovoltaic (PV) molecular-beam epitaxy (MBE)-grown Hg_1−xCd_xTe double-layer planar heterostructure (DLPH) large-area detectors is a critical noise component with the potential to limit sensitivity of the cross-track infrared sounder (CrIS) instrument. Therefore, an understanding of the origins and mechanisms of noise currents in these PV detectors is of great importance. Excess low-frequency noise has been measured on a number of 1000-μm-diameter active-area detectors of varying “quality” (i.e., having a wide range of I-V characteristics at 78 K). The 1/f noise was measured as a function of cut-off wavelength under illuminated conditions. For short-wave infrared (SWIR) detectors at 98 K, minimal 1/f noise was measured when the total current was dominated by diffusion with white noise spectral density in the mid-10⁻¹⁵A/Hz^1/2 range. For SWIR detectors dominated by other than diffusion current, the ratio, α, of the noise current in unit bandwidth i_n(f = 1 Hz, V_d = −60 mV, and Δf = 1 Hz) to dark current I_d(V_d = −60 mV) was α_SW-d = i_n/I_d ∼ 1 × 10⁻³. The SWIR detectors measured at 0 mV under illuminated conditions had median α_SW-P = i_n/I_ph ∼ 7 × 10⁻⁶. For mid-wave infrared (MWIR) detectors, α_MW-d = i_n/I_d ∼ 2 × 10⁻⁴, due to tunneling current contributions to the 1/f noise. Measurements on forty-nine 1000-μm-diameter MWIR detectors under illuminated conditions at 98 K and −60 mV bias resulted in α_MW-P = i_n/I_ph = 4.16 ± 1.69 × 10⁻⁶. A significant point to note is that the photo-induced noise spectra are nearly identical at 0 mV and 100 mV reverse bias, with a noise-current-to-photocurrent ratio, α_MW-P, in the mid 10⁻⁶ range. For long-wave infrared (LWIR) detectors measured at 78 K, the ratio, α_LW-d = i_n/I_d ∼ 6 × 10⁻⁶, for the best performers. The majority of the LWIR detectors exhibited α_LW-d on the order of 2 × 10⁻⁵. The photo-induced 1/f noise had α_LW-P = i_n/I_ph ∼ 5 × 10⁻⁶. The value of the noise-current-to-dark-current ratio, α appears to increase with increasing bandgap. It is not clear if this is due to different current mechanisms impacting 1/f noise performance. Measurements on detectors of different bandgaps are needed at temperatures where diffusion current is the dominant current. Excess low-frequency noise measurements made as a function of detector reverse bias indicate 1/f noise may result primarily from the dominant current mechanism at each particular bias. The 1/f noise was not a direct function of the applied bias.     

Influence of device engineering on the analog and RF performances of SOI MOSFETs

This work presents a systematic comparative study of the influence of various process options on the analog and RF properties of fully depleted (FD) silicon-on-insulator (SOI), partially depleted (PD) SOI, and bulk MOSFET's with gate lengths down to 0.08 /spl mu/m. We introduce the transconductance-over-drain current ratio and Early voltage as key figures of merits for the analog MOS performance and the gain and the transition and maximum frequencies for RF performances and link them to device engineering. Specifically, we investigate the effects of HALO implantation in FD, PD, and bulk devices, of film thickness in FD, of substrate doping in SOI, and of nonstandard channel engineering (i.e., asymmetric Graded-channel MOSFETs and gate-body contacted DTMOS).