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961.
According to X-ray diffraction analysis data, the test catalyst was a Ni-Cr spinel with an impurity of NiO. With the use of in situ IR spectroscopy, it was found that nitrite, nitrate, and acetate surface complexes occurred under the reaction conditions of the selective catalytic reduction of nitrogen oxides by propane in the presence of oxygen on the nickel-chromium catalyst. As the temperature was increased, the nitrite complexes were converted into nitrate species. The molar absorption coefficient of surface nitrate complexes was determined. According to IR-spectroscopic and TPD data, the nitrate complexes were bound relatively weakly to the surface. The temperature region of their existence was 50–200°C. The temperature region of existence of the surface acetate complexes was 200–400°C. The individual adsorption of oxygen was not observed; however, oxygen-containing surface sites (Cr5+=O) participated in the formation of the surface complexes of reactants.  相似文献   
962.
This paper presents the design and measured performance of a 1.8-GHz power amplifier featuring load mismatch protection and soft-slope power control. Load-mismatch-induced breakdown can be avoided by attenuating the RF power to the final stage during overvoltage conditions. This was accomplished by means of a feedback control system, which detects the peak voltage at the output collector node and clamps its value to a given threshold by varying the circuit gain. The issue of output power control has been addressed as well. To this end, a temperature-compensated bias network is proposed, which allows a moderate power control slope (dB/V) to be achieved by varying the circuit quiescent current according to an exponential law. The nonlinear power amplifier was fabricated using a low-cost silicon bipolar process with a 6.4-V breakdown voltage. It delivers a 33.5-dBm saturated output power with 46% maximum power-added efficiency and 36-dB gain at a nominal 3.5-V supply voltage. The device is able to tolerate a 10:1 load standing-wave ratio up to a 5.1-V supply voltage. Power control slope is lower than 80 dB/V between -15 dBm and the saturated output power level.  相似文献   
963.
We define a class of codes admitting a large automorphism group. This family contains the binary extended Hamming code, the hexacode, the Golay codes, the Pless symmetry codes, as well as the [16,4,12]/sub 8/-codes constructed by Marcugini et al. A computer search resulted in the construction of codes with new parameters [28,7,18]/sub 8/,[32,8,20]/sub 8/, and [39,13,17]/sub 4/ belonging to this family.  相似文献   
964.
Sun  G. 《Electronics letters》2005,41(8):468-469
An optical approach is demonstrated for suppressing low-frequency relative intensity noise (RIN) transfer from pump sources to the author's proposed Raman fibre laser (RFL). Low-frequency RIN transfer suppression is accomplished by outputting not the second- but first-order Stokes, which output power is clamped by the lasing second-order Stokes in the cavity and can be easily tuned in a large dynamic range. Thus, this technique fits the RFL for use as pump sources in Raman fibre amplifiers.  相似文献   
965.
966.
This paper demonstrates the complementary relation between functional parameters and electroluminescence spectroscopy for reliability investigations of 1550 nm Semiconductor Optical Amplifiers of 700 μm length active region. Ageing tests have been set to 270 mA-100 °C-1500 h and realized on two different wafers showing more impact on wafer 1 than on wafer 2. Our investigations are particularly focused on interpretation of electroluminescence spectra, from reference and aged SOAs of wafer 1, leading to an improvement of degradation mechanisms understanding. The shift rate to lower energies of the recombination energy peak at 1550 nm, as reported by electroluminescence spectra between reference and aged SOAs in relation with the decrease of optical power measured at 200 mA for the degraded SOA and completed by I(V) characterizations, suggest occurrence of non radiative deep centers near the buried ridge structure in relation with the cleaning process uniformity of interfaces before epitaxial overgrowth. These defects mainly trap majority injected carriers instead of minority carriers reducing the luminescence in the active zone. By monitoring the most sensitive failure indicator (pseudo-threshold current), lifetime distributions are also calculated to determine failure rate, between 150 and 200 FITs over 15 years for operating conditions (25 °C-200 mA) using experimental degradation laws and statistic computations, demonstrating the overall robustness of this technology.  相似文献   
967.
The deposition of decomposed ethylene on silicon wafer at lower temperature using hot filament chemical vapor deposition (HFCVD) method was applied to compose thin film of carbon and its compounds with silicon and hydrocarbon structures. The films were analyzed using Raman spectroscopy, X-ray diffraction, and scanning electron microscopy with elemental microanalysis by energy dispersive X-ray spectrometer. The structure and morphology of the early stage of the film deposition was analyzed. The obtaining of SiC as well as diamond-like structure with this method and catalytic influence of chemical admixtures on the film structure and properties are discussed.  相似文献   
968.
The principles of a narrowband technique for pulse echo attenuation measurements are presented. Experiments are described which compare the attenuation in tissue-mimicking phantoms, measured by known methods, to the attenuation measured by the present technique. The effects of various experimental parameters on the results are investigated. The attenuation in spleens of canine models and in livers of human volunteers is presented.  相似文献   
969.
970.
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