PLATOP: a novel planarized trench isolation and field oxideformation using poly-silicon

A novel isolation scheme named planarized trench isolation and field oxide formation using poly-silicon (PLATOP) Is described. PLATOP is applicable to high-performance submicron VLSI since it results in encroachment-free shallow trenches, and planarized field oxide. The process offers poly silicon-filled deep trenches. The process also relies on noncritical lithography and novel etch processes to planarize the deposited poly-silicon from the top of the active areas, and oxidation to consume the poly-silicon in the field regions. Electrical results are presented proving the viability of the isolation scheme     

Genetic algorithms: concepts and applications [in engineeringdesign]

This paper introduces genetic algorithms (GA) as a complete entity, in which knowledge of this emerging technology can be integrated together to form the framework of a design tool for industrial engineers. An attempt has also been made to explain “why” and “when” GA should be used as an optimization tool     

Mikrotechnik für Raumfahrtanwendungen

This contribution describes the preparation, based upon a chemically amplified novolak resist (CAR), electron beam lithography, and ECR plasma etching, of structures with a high aspect ratio (10∶1) and lateral dimensions in the sub-micrometer range (150nm–300nm) which may serve as collector surfaces for sub-μm dust particles in a space experiment.     

Distribution of recombination currents in the space charge regionof heterostructure bipolar devices

This paper addresses the problem of the space charge region Shockley-Read-Hall (SRH) recombination currents in heterojunctions with one noncrystalline side. A formulation which generalizes previous works is discussed. The approach is based on the drift-diffusion model with a thermionic-field emission boundary condition. The main physical parameters which determine the relative contribution of each zone of the space charge region (SCR) to the total recombination current are identified. The general analysis is applied for the first time to amorphous/crystalline heterojunctions and design criteria are established to minimize the total recombination current     

Loss performance of tagged and normal ATM cells at a partiallyshared buffer

The loss performance of tagged and normal ATM cells at a first-in-first-out (FIFO) buffer is studied. The authors show that if a partial buffer sharing mechanism is adopted the loss probability of normal cells can be firmly guaranteed, regardless of the traffic intensity of tagged cells     

Pulse radar reflectometry for fusion plasma diagnostics

A basic principle of pulse radar reflectometry is considered in this paper. A numerical analysis is performed in order to study errors appearing due to the expansion of a microwave pulse reflected from the plasma. A block diagram of the basic pulse radar scheme and its overall performance is presented. The first experimental results obtained on T11-M tokamak are discussed. An improved pulse radar scheme with cross-detection is considered. The results of bench test experiments and future applications of this scheme are discussed.     

Deep levels,electrical and optical characteristics in SnTe-Doped GaSb Schottky Diodes

The GaSb layers investigated were grown directly on GaAs substrates by molecular beam epitaxy (MBE) using SnTe source as the n-type dopant. By using admittance spectroscopy, a dominant deep level with the activation energy of 0.23-0.26 eV was observed and its concentration was affected by the Sb₄/Ga flux ratio in the MBE growth. A lowest deep-level concentration together with a highest mobility was obtained for GaSb grown at 550°C under a Sb₄/Ga beam equivalent pressure (BEP) ratio around 7, which should correspond to the lowest ratio to maintain a Sb-stabilized surface reconstruction. In the Hall measurement, an analysis of the temperature-dependent mobility shows that the ionized impurity concentration increases proportionally with the sample’s donor concentration, suggesting that the ionized impurity was introduced by an SnTe source. In addition, optical properties of an undoped p-, a lightly and heavily SnTe-doped GaSb layers were studied by comparing their photoluminescence spectra at 4.5K.     

Error floor of MSK modulation in a mobile-radio channel with twoindependently fading paths

We investigate the error probability bit error rate (BER) of minimum shift keying (MSK) modulation with differential detection in a two-path fading channel without noise (error floor). We develop a new method for the computation of the BER: we show that errors occur if the phasors of the instantaneous impulse response fall into certain regions of the complex plane; then we average over the statistics of the phasors to arrive at the mean BER. With this method, we derive analytical expressions for the BER for arbitrary amplitude statistics of the paths. For the special case of two Rayleigh-fading paths with small delay, we find that the BER is proportional to the square of the mean delay spread (normalized to the bit length) if we sample between the two pulses. This proves the qualitative behavior of previous estimates, but our results allow also a more exact quantitative formulation. The quadratic dependence of the BER on the delay spread breaks down if we have one Rayleigh-fading and one Rician-fading path. We find that the bit combinations 1-11 and -11-1 do not lead to errors in the two-path model. However, additional Monte Carlo simulations show that these bit combinations do lead to errors in a three-path model     

The amplitude and phase of a transmission holographic grating due to four-wave interaction in a photorefractive medium

Based on a previously developed two-level model of four-wave interaction in photorefractive crystals, expressions for the amplitude and phase of a transmission holographic grating have been obtained. The analysis of these expressions points to the dependence of both the amplitude and the phase of the grating on the intensity of the readout beam.     

RF excitation of a flowing gas CO2 waveguide laser

Investigation of an RF excited CO₂ waveguide laser in flowing gas operation is reported. Power extraction of 0.8 W/cm with an efficiency of 10.3% has been achieved. Using W.W. Rigrod's analysis (1965), values of the small-signal gain α₀ and saturation parameter I_s have been determined for different excitation levels and for different pressures of the amplifying medium. The parameters α₀ and I_s, have been determined as 0.6%/cm and 10.4 kW/cm ², respectively, at 125 torr and 100 W/cm³ RF loading power. These values are close to those reported for sealed-off RF CO₂ waveguide lasers with xenon added to the gas mixture