Design and performance evaluation of a banyan network basedinterconnection structure for ATM switches

This paper presents a new self-routing packet network called the plane interconnected parallel network (PIPN). In the proposed design, the traffic arriving at the network is shaped and routed through two banyan network based interconnected planes. The interconnections between the planes distribute the incoming load more homogeneously over the network. The throughput of the network under uniform and heterogeneous traffic requirements is studied analytically and by simulation. The results are compared with the results of the baseline network and another banyan network based parallel interconnection network. It is shown that, for the proposed design, a higher degree of heterogeneity results in better performance     

Densification involved in the UV-based photosensitivity of silicaglasses and optical fibers

A comprehensive survey of photosensitivity in silica glasses and optical fiber is reviewed. Recent work on understanding the mechanisms contributing to germanium or aluminum doped fiber photosensitivity is discussed within the framework of photoelastic densification models     

A new lateral MOS-gated thyristor with controlling base-current

A new lateral MOS-gated thyristor, called the Base-Current-Controlled Thyristor, is described. This device is designed so that most holes at the on-stage reach the P base through the floating P⁺ region adjacent to the P base and the on-state MOSFET. At the turn-off stage, the interruption of the hole current to the P base due to switching off the above MOSFET occurs simultaneously with the conventional turn-off operation. The concept of this device is verified experimentally by using the fabricated lateral device with the external MOSFET. This device exhibits a better trade-off relation between the on-state voltage and the turn-off time compared uith the conventional MOS-gated thyristor     

Influence of the quality of the heterointerface on the cyclotron resonance spectra of InAs/(AlGa)Sb heterostructures

Cyclotron resonance is measured in solitary type-II InAs-AlGaSb quantum wells grown by molecular-beam epitaxy under various growth conditions. Quantum oscillations observed in the cyclotron resonance spectra in InAs-GaSb samples are attributed to scattering by a short-range potential due to roughness of the heterointerface. A new method based on measurement of the cyclotron resonance spectra is proposed for assessing the quality of the heterointerface. Fiz. Tekh. Poluprovodn. 31, 1246–1248 (October 1997)     

Error-resilience improvement for block-transform video coders

An algorithm is presented to enhance the resilience of block-based video-coding algorithms against channel errors. The error-resilience algorithm described suggests the use of fixed length coding to alleviate the effect of Huffman coding on the synchronisation of the decode under erroneous conditions. The proposed mechanism modifies the order of transmission of the fixed-length video parameters to increase the chance of their arrival. Synchronisation words are sent at fixed-length intervals within the bit stream to reduce the possibility of the decoder falling on similar bit patterns within the bit stream. To limit the effect of error accumulation, the motion prediction process is halted and the differential coding of motion vectors is not applied. FEC techniques are applied on some error-sensitive segments of the reordered video bitstream. The effectiveness of the proposed error-resilience algorithm is evidenced by both subjective and objective results     

Formation of a two-dimensional periodic structure of local melting regions on a silicon surface upon pulsed light irradiation

The first results regarding the formation of a two-dimensional periodic structure of local melting regions on a silicon surface upon pulsed light irradiation are presented. The conditions are established, and the mechanism of the formation of such structures is discussed. Zh. Tekh. Fiz. 67, 97–99 (December 1997)     

State of and prospects for XeF(C−A) optically pumped lasers

Experimental and theoretical results are presented on an XeF(C?A) blue-green laser driven by 5-kJ energy. The laser was pumped by a ferrite-induced discharge of 90 cm in length. The output energy of 0.22 J was obtained with a plane-parallel resonator. A program to simulate laser operation has been developed. Numerical results for a wide range of conditions are compared with experiments performed by us and by other authors. It is found that intracavity refractive losses limit laser operation for XeF pressures above 3 torr. The laser efficiency strongly depends on the discharge-to-cavity length ratio. Possible ways to increase the laser power and efficiency are discussed.     

Electrical linewidth test structures fabricated in monocrystallinefilms for reference-material applications

The physical widths of reference features incorporated into electrical linewidth test structures patterned in films of monocrystalline silicon have been determined from Kelvin voltage measurements. The films in which the test structures are patterned are electrically insulated from the bulk-silicon substrate by a layer of silicon dioxide provided by SIMOX (Separation by the IMplantation of OXygen) processing. The motivation is to facilitate the development of linewidth reference materials for critical-dimension (CD) metrology-instrument calibration. The selection of the (110) orientation of the starting silicon and the orientation of the structures' features relative to the crystal lattice enable a lattice-plane-selective etch to generate reference-feature properties of rectangular cross section and atomically planar sidewalls. These properties are highly desirable for CD applications in which feature widths are certified with nanometer-level uncertainty for use by a diverse range of CD instruments. End applications include the development and calibration of new generations of CD instruments directed at controlling processes for manufacturing devices having sub-quarter-micrometer features     

Low temperature delamination of plastic encapsulated microcircuits

Plastic encapsulated microcircuits (PEMs) are increasingly being used in applications requiring operation at temperatures lower than the manufacturer’s recommended minimum temperature, which is 0°C for commercial grade components and −40°C for industrial and automotive grade components. To characterize the susceptibility of PEMs to delamination at these extreme low temperatures, packages with different geometries, encapsulated in both biphenyl and novolac molding compounds, were subjected to up to 500 thermal cycles with minimum temperatures in the range −40 to −65°C in both the moisture saturated and baked conditions. Scanning acoustic microscopy revealed there was a negligible increase in delamination at the die-to-encapsulant interface after thermal cycling for the 84 lead PQFPs encapsulated in novolac and for both 84 lead PQFPs and 14 lead PDIPs encapsulated in biphenyl molding compound. Only the 14 lead novolac PDIPs exhibited increased delamination. Moisture exposure had a significant effect on the creation of additional delamination.     

Analysis of low bit rate image transform coding

Calculations based on high-resolution quantizations prove that the distortion rate D(R¯) of an image transform coding is proportional to 2^-2R when R¯ is large enough. In wavelet and block cosine bases, we show that if R¯<1 bit/pixel, then D(R¯) varies like R¯^1-2γ, where γ remains of the order of 1 for most natural images. The improved performance of embedded codings in wavelet bases is analyzed. At low bit rates, we show that the compression performance of an orthonormal basis depends mostly on its ability to approximate images with a few nonzero vectors