Evanescently coupled photodiodes integrating a double-stage taper for 40-Gb/s applications-compared performance with side-illuminated photodiodes

The design, fabrication, and performance of double-stage taper photodiodes (DSTPs) are reported. The objective of this work is to develop devices compatible with 40-Gb/s applications. Such devices require high efficiency, ultrawide band, high optical power handling capability, and compatibility with low-cost module fabrication. The integration of mode size converters improves both the coupling efficiency and the responsivity with a large fiber mode diameter. Responsivity of 0.6 A/W and 0.45 A/W are achieved with a 6-/spl mu/m fiber mode diameter and cleaved fiber, respectively, providing relaxed alignment tolerances (/spl plusmn/1.6 /spl mu/m and /spl plusmn/2 /spl mu/m, respectively), compatible with cost-effective packaging techniques. DSTPs also offer a wide bandwidth greater than 40 GHz and transverse-electric/transverse-magnetic polarization dependence lower than 0.2 dB. Furthermore, a DSTP saturation current as high as 11 mA results in optical power handling greater than +10 dBm and a high output voltage of 0.8 V. These capabilities allow the photodiode to drive the decision circuit without the need of a broad-band electrical amplifier. The DSTP devices presented here demonstrate higher responsivities with large fiber mode diameter and better optical power handling capabilities and are compared with classical side-illuminated photodiodes.     

InP D-HBT ICs for 40-Gb/s and higher bitrate lightwave transceivers

The combination of device speed (f/sub T/, f/sub max/ > 150 GHz) and breakdown voltage (V/sub bceo/ > 8 V) makes the double heterojunction bipolar InP-based transistor (D-HBT) an attractive technology to implement the most demanding analog functions of 40-Gb/s transceivers. This is illustrated by the performance of a number of analog circuits realized in an InP D-HBT technology with an 1.2- or 1.6-/spl mu/m-wide emitter finger: a low phase noise push-push voltage-controlled oscillator with -7-dBm output power at 146 GHz, a 40-GHz bandwidth and low-jitter 40-Gb/s limiting amplifier, a lumped 40-Gb/s limiting driver amplifier with 4.5-V/sub pp/ differential output swing, a distributed 40-Gb/s driver amplifier with 6-V/sub pp/ differential output swing, and a number of distributed preamplifiers with up to 1.3-THz gain-bandwidth product.     

Quantisation noise control in perceptual audio coding using low selectivity filter banks

The problem of computing, in a subband audio coder, the maximum quantisation noise power that can be injected in each band to ensure transparent coding when low selectivity filter banks are used, is addressed. A low complexity strategy, taking into account the frequency responses of the synthesis filter bank, is proposed for achieving an overall distortion due to quantisation noise always below the masking threshold (provided by a psycho-acoustic model) for any length prototype filters.     

Magnetic effects of direct ion implantation of Mn and Fe into p-GaN

In p-GaN implanted with Mn (3×10¹⁶ cm⁻² at 250 keV), the material after annealing shows ferromagnetic properties below 250 K. Cross-sectional transmission electron microscopy (TEM) revealed the presence of platelet structures with hexagonal symmetry. These regions are most likely Ga_xMn_1−xN, which produce the ferromagnetic contribution to the magnetization. In p-GaN implanted with Fe, the material after annealing showed ferromagnetic properties at temperatures that were dependent on the Fe dose, but were below 200 K in all cases. In these samples, TEM and diffraction analysis did not reveal any secondary phase formation. The results for the Fe implantation are similar to those reported for Fe doping during epitaxial growth of GaN.     

An optical instrumentation using a sensor with a sensordummyagainst noises on sensor and transmission line

This short paper discusses the method of effectively canceling equal status normal mode noise not only on a sensor line but also on a transmission line of an optical instrument using a sensor with a sensordummy resistance     

1/f noise sources

This survey deals with 1/f noise in homogeneous semiconductor samples. A distinction is made between mobility noise and number noise. It is shown that there always is mobility noise with an α value with a magnitude in the order of 10^-4. Damaging the crystal has a strong influence on α, α may increase by orders of magnitude. Some theoretical models are briefly discussed none of them can explain all experimental results. The α values of several semiconductors are given. These values can be used in calculations of 1/f noise in devices     

Correlation of modified crack tip opening distance with heat input to the heat affected zone of high-strength low-alloy steels

Investigated is the dependency of the crack tip opening displacement (CTOD) on the local microstructure of the heat affected zone in high-strength low-alloy (HSLA) microalloyed steel. Since the initiation of the crack tip location could not be controlled in fatigue, any possible correlation between heat iput in welding and fracture toughness could be smeared. Modified CTOD data are defined; they show that the fracture resistance of the weld joint decreased as the heat input increased.     

T1Effects in Sequential Dynamic Susceptibility Contrast Experiments

Residual effects of an initial bolus of gadolinium contrast agent have been previously demonstrated in sequential dynamic susceptibility contrast MR experiments. While these residual effects quickly reach a saturation steady state, their etiology is uncertain, and they can lead to spurious estimates of hemodynamic parameters in activation experiments. The possible influence ofT₁effects is now investigated with experiments in whichT₁weighting is varied as well as with serial regionalT₁measurements. Little evidence for significant residualT₁effects is found, suggesting instead that susceptibility effects underlie these observations. An initial saturation dose of contrast agent minimizes this effect.     

Laser spectroscopy of the 1s HFS of H-like ions at a bunched beam in the storage ring ESR

The investigation of the 1s HFS provides a good possibility for testing QED effects in a combination of a strong electric and magnetic field. Here, we report about the laserspectroscopic measurements of the ground state hyperfine splitting in ²⁰⁷Pb⁸¹⁺. To handle this M1-transition in the infrared optical regime with its long lifetime, we developed a new detection technique using a bunched ion beam. For the observation of fluorescence light, a new mirror system is adapted to the emission characteristics from an ion beam at relativistic velocities. This revised version was published online in July 2006 with corrections to the Cover Date.     

129Xe NMR study of the homogeneity and the size distribution of small sodium metal particles in NaY zeolite

NaY zeolite samples loaded with sodium metal by vapor phase deposition have been investigated using¹²⁹Xe NMR spectroscopy. At low sodium concentration, the¹²⁹Xe NMR spectrum showed three resonance lines which clearly indicate the existence of distinct domains in the zeolite sample. Such an observation suggests that the diffusion of the xenon atoms into each domain only occurs with respect to the NMR time scale (2.9 ms). As the sodium concentration increases, observation of a single broad line indicate a macroscopic homogenization of the system. The shift of this line is explained in part due to a paramagnetic interaction between the xenon atoms and the unpaired electrons of particles containing an odd number of sodium atoms. The linewidth is due to the distribution of the local magnetic fields partially averaged by the rapid motion of the xenon atoms and to the statistical distribution of the sodium particles in the supercage cavities. The paramagnetic interaction vanishes with the oxidation of the sample leading to a narrowing and a shift of the line to higher magnetic fields.