Modelization of the whispering gallery mode in microgear resonators using the Floquet-Bloch formalism

In this paper, a two-dimensional (2-D) method describing the whispering gallery mode in a microgear resonator is presented. The microgear is a microdisk surrounded by a circular grating. The method, which is based on the Floquet-Bloch formalism, analytically describes the field within the disk and outside the grating. On the other hand, the field within the grating is calculated using a finite-difference scheme in polar coordinates. Matching the boundary conditions, it is possible to work in a forced oscillation regime or in a free oscillation regime (laser mode). The resonant wavelength and quality factor can then be deduced. Compared to the coupled mode theory and to 2-D finite-difference time-domain computations, the method is faster and more accurate. Moreover, a polarization effect of the microgear is demonstrated. The TE polarization experiences a Q-factor improvement contrary to TM polarization. Finally, microgear structures prove to be more efficient than micro flowers.     

Ozone measurement in visible region: an optical fibre sensor system

Ozone measurement based on the optical absorption of visible light at 603 nm using polymer optical fibres is investigated and tested. Comparisons with a commercial UV based sensor demonstrate the ability of the visible based sensor to measure high concentrations over a range 27-127 mg/litre. A resolution of 5 mg/litre is also demonstrated for this sensor.     

Structuring Multi-attribute Value Hierarchies

The first stage in a multi-attribute value analysis is the development of a hierarchical structure of the attributes of the problem. This paper reports the process of developing such a structure for the problem of choosing a suitable mode of transport for radioactive waste. The initial hierarchy of attributes went through several stages of development as new insights emerged about the nature of the problem. Some of the reasons behind this restructuring are discussed, and several important questions about the structuring process are formulated.     

Synthesis of alkylindoles (review)

Methods for obtaining alkylindoles, excluding the Fischer synthesis and direct alkylation, developed during the last 15 years are correlated.Translated from Khimiya Geterotsiklicheskikh Soedinenii, No. 9, pp. 1155–1172, September, 1987.     

Coupled-mode theory of overmoded cylindrical metal bragg-reflectors

A coupled-mode theory of overmoded, cylindrical metal Bragg-reflectors is presented. The first-order Bragg coupling constants are derived for TE → TE, TM → TM, TE → TM, and TM → TE mode conversions. Reflectivities and transverse modeQ-factors are computed for a Bragg-reflector resonator. The results illustrate important competition effects between nearly-degenerate-transverse-modes occurring within both the Bragg-reflectors and the resonator.     

Novel Nakagami-m parameter estimator for noisy channel samples

A novel moment-based m parameter estimator using noisy channel samples is derived. This estimator is simpler than known estimators. Numerical results are presented to demonstrate that, under some practical fading conditions, it outperforms previous estimators.     

Hot-carrier reliability of 20V MOS transistors in 0.13 μm CMOS technology

This paper presents results of reliability investigation of 20 V N-Drift MOS transistor in 0.13 μm CMOS technology. Due to high performances required for CMOS applications, adding high voltage devices becomes a big challenge to guarantee the reliability criteria. In this context, new reliability approaches are needed. Safe Operating Area are defined for switch, V_ds limited and V_gs limited applications in order to improve circuit designs. For V_ds limited applications, deep doping dose effects in drift area are investigated in correlation to lifetime evaluations based on device parameter shifts under hot carrier stressing. To further determine the amount and locations of hot carriers injections, accurate 2D technological and electrical simulations are performed and permit to select the best compromise between performance and reliability for N-Drift MOS transistor.     

Fabrication of Strain-Relaxed Si<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>Ge<Subscript>x</Subscript>/Si(001) Buffer Layers of Low Surface Roughness

The results are presented of the fabrication of strain-relaxed graded Si_{1 − x} Ge_x/Si(001) buffer layers with a maximum Ge fraction of about 0.25 that have a low density of threading dislocations (<10⁶ cm⁻²) and low surface roughness. The buffer layers are grown by atmospheric-pressure hydride CVD. It is found that chemical mechanical polishing can reduce their surface roughness to a level comparable with that of the original Si(001) substrates. It is shown that the polished buffer layers can serve as substrates for MBE-grown SiGe/Si heterostructures.__________Translated from Mikroelektronika, Vol. 34, No. 4, 2005, pp. 243–250.Original Russian Text Copyright © 2005 by Vostokov, Drozdov, Krasil’nik, Kuznetsov, Novikov, Perevoshchikov, Shaleev.