Design, manufacture and evaluation of a scalable high-performanceneural system

The authors describe a scalable neural system, HyperNet, based on a probabilistic RAM-based architecture and using a custom VLSI IC. A system using five HyperNet VLSI ICs and capable of realising up to 10240 neurons has been designed, manufactured and demonstrated to have the potential to learn more than three orders of magnitude faster than simulations on current workstations     

A superconducting X-ray spectrometer with a tantalum absorber andlateral trapping

We report the development of Nb-Ta-Al-Al₂O₃-Al superconducting tunnel junction structures for high energy resolution and high efficiency X-ray detection. These devices utilize a Ta X-ray absorber with superconductor “bandgap engineered” quasiparticle trapping to improve charge collection. Experimental results at 0.3 K are presented, showing energy resolution of 102 eV full-width-half-maximum for 6 keV X-rays. Collected charge is in excess of 5×10⁶ electrons. The absorption efficiency is better than 35%. Devices thermally cycle with no change in characteristics     

Analysis of discontinuous-layer propagation structures by transverse resonance method

The transverse resonance method is used for the accurate analysis of propagation structures with discontinuous substrate layers. The original aspect of the approach is the use of LSE-LSM modes as basis functions combined with appropriate trial functions which leads to small-size matrices and reduces the numerical effort. As an example the propagation characteristics of a microslab waveguide with finite metallisation thickness are calculated.<>     

Aqueous solution and solid state interactions of lanthanide ions with a methacrylic ester polymer bearing pendant 15‐crown‐5 moieties

The interaction between trivalent lanthanide ions and poly(1,4,7,10,13‐pentaoxacyclopentadecan‐2‐yl‐methyl methacrylate), PCR5, in aqueous solution and in the solid state have been studied. In aqueous solution, evidence of a weak interaction between the lanthanides and PCR5 comes from the small red shift of the Ce(III) emission spectra and the slight broadening of the Gd(III) EPR spectra. From the Tb(III) lifetimes in the presence of H₂O and D₂O the loss of one or two water coordinated molecules is confirmed when Tb(III) is bound to PCR5. An association constant of the order of 200 M^?1 was obtained for a 1:1 (lanthanide:15‐crown‐5) complex from the shift of the polymer NMR signals induced by Tb(III). A similar association constant is obtained from the differences of the molar conductivity of Ce(III) solution at various concentrations in presence and absence of PCR5. When Tb(III) is adsorbed on PCR5 membranes, lifetime experiments in H₂O and D₂O confirm the loss of 5 or 6 water coordinated molecules indicating that in solid state the lanthanide(III)‐PCR5 interaction is stronger than in solution. The adsorption of Ce(III) in PCR5 membranes shows a Langmuir type isotherm, from which an equilibrium constant of 39 M^?1 has been calculated. SEM shows that the membrane morphology is not much affected by lanthanide adsorption. Support for lanthanide ion–crown interactions comes from ab initio calculations on 15‐crown‐5/La(III) complex. © 2007 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 45: 1788–1799, 2007     

Measurement and modeling of the sidewall threshold voltage ofmesa-isolated SOI MOSFETs

Five-terminal silicon-on-insulator (SOI) MOSFETs have been characterized to determine the threshold voltage at the front, back, and sidewall as a function of the body bias. The threshold voltage shift with the body bias at the front and back interfaces can be explained by the standard bulk body effect equation. However, the threshold voltage shift at the sidewall is smaller than predicted by this equation and saturates at large body biases. This anomalous behavior is explained by two-dimensional charge sharing between the sidewall and the front and back interfaces. An analytical model that accounts for this charge sharing by a simple trapezoidal approximation of the depletion regions and correctly predicts the sidewall threshold voltage shift and its saturation is discussed. The model makes it possible to measure the sidewall threshold even when it is larger than the front threshold voltage     

The Influence of Variable Convective Velocities on Longitudinal Diffusion

Solutions are presented for the impulsively started uniformstream and simple shear flows past a point source of momentum,which can be interpreted to describe the position and the widthof the front which transmits the knowledge of the singularitythrough a slightly viscous fluid. These understandings are thengeneralized to show that the front always moves with velocityslower than that of a (strictly monotonic) convective velocity,and also that its width always grows faster than with simplediffusion. Finally, a remarkably simple, exact expression is given forvorticity due to a simple shear flow past a point vortex.     

Shape transition from InAs quantum dash to quantum dot on InP(3 1 1)A

We report on the shape transition from InAs quantum dashes to quantum dots (QDs) on lattice-matched GaInAsP on InP(3 1 1)A substrates. InAs quantum dashes develop during chemical-beam epitaxy of 3.2 monolayers InAs, which transform into round InAs QDs by introducing a growth interruption without arsenic flux after InAs deposition. The shape transition is solely attributed to surface properties, i.e., increase of the surface energy and symmetry under arsenic deficient conditions. The round QD shape is maintained during subsequent GaInAsP overgrowth because the reversed shape transition from dot to dash is kinetically hindered by the decreased ad-atom diffusion under arsenic flux.     

Octave-tunable miniature RF resonators

The development and testing of a miniaturized, high-Q, broadly tunable resonator is described. An exemplary device, with a center frequency that is continuously tunable from 1.2 to 2.6GHz, was tested in detail. Experimental results demonstrated a resonator Q of up to 380, and typical insertion loss of -1.9dB for a 25MHz 3-dB bandwidth. These resonators have been used to stabilize a broadly-tunable oscillator with phase noise of -132dBc/Hz at 100-kHz offset, with a center frequency tunable from 1.2-2.6GHz, and a tuning speed of 1GHz/ms.     

Anomalous splitting in microwave mode-beating spectra of semiconductor ring lasers

Mode-beating spectra are investigated in long-perimeter (1.028 cm) monolithically integrated multiple-quantum-well semiconductor ring lasers. The beating line near 8 GHz is found to be split into two components. With increasing pumping current, a normal component shifts to lower frequencies, while an anomalous higher-frequency component shifts in the opposite direction. It is suggested the anomalous blue-shifting line results from power-induced perturbation of the refractive index in the vicinity of a strong mode.     

A time-based energy-efficient analog-to-digital converter

Dual-slope converters use time to perform analog-to-digital conversion but require 2/sup N+1/ clock cycles to achieve N bits of precision. We describe a novel current-mode algorithm that also uses time to perform analog-to-digital conversion but requires 5N clock cycles to achieve N bits of precision via a successive subranging technique. The algorithm requires one asynchronous comparator, two capacitors, one current source, and a state machine. Amplification of two is achieved without the use of an explicit amplifier by simply doing things twice in time. The use of alternating voltage-to-time and time-to-voltage conversions provides natural error cancellation of comparator offset and delay, 1/f noise, and switching charge-injection. The use of few components and an efficient mechanism for amplification and error cancellation allow for energy-efficient operation: in a 0.35-/spl mu/m implementation, we were able to achieve 12 bit of DNL limited precision or 11 bit of thermal noise-limited precision at a sampling frequency of 31.25 kHz with 75 /spl mu/W of total analog and digital power consumption. These numbers yield a thermal noise-limited energy efficiency of 1.17 pJ per quantization level, making it one of the most energy-efficient converters to date in the 10-12 bit precision range.