SiH4＋CH4激光等离子体动力学时空特性

采用时间，空间分辨的等离子体光辐射诊断技术，研究了脉冲ＴＥＡＣＯ２激光诱发ＳｉＨ４＋ＣＨ４击穿产生的等离子体膨胀过程，得到不同空间位置，不同实验条件下等离子体发光的时间特性，证明了ＳｉＨ４＋ＣＨ４气体击穿产生爆燃波而后诱发激波是等离子体中基本宏观动力学过程，并在实验上分析了激波对等离体内化学反应的影响，为激光等离子体合成ＳｉＣ粉末微观反应动力学过程的研究提供了参考数据。     

一类多维的非线性Schrdinger方程组的初边值问题

本文考虑一类具有耗散与磁场效应的多维非线性Schrdinger型方程组的初边值问题。使用积分估计(包括L~p—L~q估计)证明了整体解的存在性。     

可调谐的双波长钛宝石激光器

一台可调谐钛宝石激光器两个波长同时运转,在数ns以内同步,相对波长差最大可达55nm。观测到明显的两种波长激光的竞争和关联。由BBO实现了两波的和频与倍频。     

改善准分子激光光强分布的一种方法

介绍了一种改善准分子激光输出光束光强均匀性的新方法，给出了实验结果和简要的分析。     

High-performance InP/InGaAs heterojunction bipolar transistors with highly carbon-doped base grown by chemical beam epitaxy

InP/In/sub 0.53/Ga/sub 0.47/As heterojunction bipolar transistors (HBTs) using a highly carbon-doped base are reported. High carbon doping has been achieved by chemical beam epitaxy (CBE). The resulting hole concentration in the carbon-doped base is as high as 7*10/sup 19//cm/sup 3/. To the authors' knowledge, this is the highest doping level reported using carbon. HBTs with a 20 AA spacer layer exhibited nearly ideal I-V characteristics with collector and base current ideality factor of 1.018 and 1.037, respectively. Current gain and breakdown voltage BV/sub CEO/ were 7 and 6 V, respectively.<>     

慢性铅中毒一例

详细问诊，为诊断慢性铅中毒提供了重要依据。     

Invasiveness of LiTaO/sub 3/ and GaAs probes in external E-O sampling

Disturbances of signals on a coplanar waveguide (CPW) induced by the presence of LiTaO/sub 3/ and GaAs electrooptic probes in external electrooptic (EO) sampling have been simulated and compared quantitatively. The finite-difference-time-domain method is used to simulate the full wave field around a coplanar waveguide on a GaAs substrate in an external EO sampling configuration. The results indicate that the induced signal disturbance, or invasiveness, of a LiTaO/sub 3/ probe is almost ten times that of a GaAs probe in terms of the magnitude of S/sub 11/, but that LiTaO/sub 3/ yields about two times the EO response for a given S/sub 11/ and optical probing wavelength. The transparency of LiTaO/sub 3/ to shorter wavelengths, however, allows an even higher sensitivity for this material relative to GaAs. The results suggest that these probes do not exhibit significant invasiveness (magnitude of S/sub 11/ smaller than -40 dB), if they are removed from contact by the distance of CPWs center conductor width.<>     

A Novel Method to Synthesize Polyorganozircosilazane

A new kind of polyorganozircosilazane as Si/Zr/C/N-based ceramic precursor was synthesized from the condensation reaction of hexamethyleyclotrisilazane lithium salts(D3^NLi）and zirconium tetrachloride(ZrCl4).In the presence of N,N,N’,N’-tetramethyl ethylene diamine(TMEDA),polyorganozircosilazane was obtained in high yield.     

微结构量子器件

微结构量子器件是八十年代中期伴随着微结构物理的发展而出现的一种新的半导体器件,这种器件以量子力学原理工作,具有常规“经典”器件无法比拟的优异特性。本文在简要介绍了微结构系统电子状态的基础上,较详细地描述了量子谐振隧道器件以及量子线和量子点激光器的基本原理、特点及其应用前景。