Periodic Integrable Systems with Delta-Potentials

In this paper we study root system generalizations of the quantum Bose-gas on the circle with pair-wise delta-function interactions. The underlying symmetry structures are shown to be governed by the associated graded algebra of Cherednik's (suitably filtered) degenerate double affine Hecke algebra, acting by Dunkl-type differential-reflection operators. We use Gutkin's generalization of the equivalence between the impenetrable Bose-gas and the free Fermi-gas to derive the Bethe ansatz equations and the Bethe ansatz eigenfunctions.     

Chaos and hyperchaos in a gyrotron

We study oscillation in a gyrotron with allowance for reflections from an output horn. Regions with different system behaviors, such as stationary oscillation, self-modulation, and complex-dynamics regimes are found in the parameter plane. The scenarios of appearance of chaotic oscillations are considered. It is shown that they can emerge via either a sequence of period-doubling bifurcations or destruction of quasiperiodic motion. For chaotic attractors, Lyapunov exponents are calculated and their dimensions are estimated on the basis of the Kaplan-Yorke formula. The dimension values turn out to be anomalously large, which is stipulated by the presence of a large number of high-Q eigenmodes in the gyrotron cavity due to operation near the cutoff frequency of an electrodynamic system. __________ Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Radiofizika, Vol. 49, No. 10, pp. 887–899, October 2006.     

Systematic characterization of Cl2 reactive ion etchingfor improved ohmics in AlGaN/GaN HEMTs

Pre-metal-deposition reactive ion etching (RIE) was performed on an Al_0.3Ga_0.7N/AlN/GaN heterostructure in order to improve the metal-to-semiconductor contact resistance. An optimum AlGaN thickness for minimizing contact resistance was determined. An initial decrease in contact resistance with etching time was explained in terms of removal of an oxide surface layer and/or by an increase in tunnelling current with the decrease of the AlGaN thickness. The presence of a dissimilar surface layer was confirmed by an initial nonuniform etch depth rate. An increase in contact resistance for deeper etches was experienced. The increase was related to depletion of the two-dimensional (2-D) electron gas (2-DEG) under the ohmics. Etch depths were measured by atomic force microscopy (AFM). The contact resistance decreased from about 0.45 Ωmm for unetched ohmics to a minimum of 0.27 Ωmm for 70 Å etched ohmics. The initial thickness of the AlGaN layer was 250 Å. The decrease in contact resistance, without excessive complications on device processing, supports RIE etching as a viable solution to improve ohmic contact resistance in AlGaN/GaN HEMTs     

New insights in polarity-dependent oxide breakdown for ultrathin gate oxide

In this work, a quantitative analysis is applied to resolve the newly reported polarity-dependent charge-to-breakdown (Q/sub BD/) data from thick oxides of 6.8 nm down to ultrathin oxides of 1.9 nm. Three independent sets of Q/sub BD/ data, i.e., n/sup +/poly/NFET stressed under inversion and accumulation, and p/sup +/ poly/PFET under accumulation are carefully investigated. The Q/sub BD/ degradation observed for p-type anodes, either poly-Si or Si-substrate, can be nicely understood with the framework of maximum energy released by injected electrons. Thus, this work provides a universal and quantitative account for a variety of experimental observations in the time-to-breakdown (T/sub BD/) and Q/sub BD/ polarity-dependence of oxide breakdown.     

A comparison between different PMD compensation techniques

We quantify the benefits of using different techniques for compensation of polarization mode dispersion (PMD) in fiber-optic communication systems by means of numerical simulations. This is done both with respect to PMD-induced pulse broadening and in terms of system outage probability for different data formats [nonreturn-to-zero (NRZ) and return-to-zero (RZ)]. Attention is focused on simple and relevant single- and double-stage post-transmission compensators with a few degrees of freedom (DOF). It is generally believed that a PMD compensator with a polarization controller and a variable delay line can only compensate the PMD to the first order. We show, from analytical results, the counterintuitive fact that this scheme can also partially compensate for higher order PMD. We also investigate the benefit of using a polarizer as compensation element where the optical average power can be used as a feedback signal     

Efficient QoS support in a slotted multihop WDM metro ring

A novel distributed access protocol for a slotted wavelength-division-multiplexing (WDM) metro ring employing all-optical packet switching and supporting quality-of-service (QoS) classes is presented and analyzed. Since we assume that there are more nodes than available wavelengths in the network, we obtain a scalable multihop WDM ring as underlying network architecture. By dividing each channel into several time slots and further applying destination release and slot reuse, data packets can be efficiently transmitted and received in a statistically multiplexed manner. In our architecture, each node is equipped with one tunable transmitter and one fixed-tuned receiver. Furthermore, as we generally consider so-called a posteriori access strategies, different packet selection schemes are proposed and compared. An analytical model based on the semi-Markov process methodology is developed to quantify the performance of one of these schemes. As a key element of the protocol, an efficient QoS support access mechanism is proposed and its performance is evaluated. The new QoS control scheme adopts a frame-based slot reservation strategy including connection setup and termination, which only slightly increases the signaling and node processing overhead. Thus, an efficient hybrid protocol combining connectionless and connection-oriented packet transmissions is proposed     

Security issues for downloaded code in mobile phones

'Software defined radio' (SDR) is a technology that will appear in future generations of mobile phones, i.e. following the third-generation mobile phone technology that is currently being defined and developed. Early versions of 'pragmatic' SDR will allow the terminal to be reconfigured at any level of its protocol stack. Ultimately, the 'pure' SDR technology will allow a mobile phone or terminal to have its air interface software configured or reconfigured by other software (or software parameters) that have been downloaded to the terminal, e.g. over the air, or from a remote server via the Internet and one's personal computer (PC). A number of security issues arise with downloaded code that implements the air interface functions, and these may not be obvious simply from looking at the way PC software is updated on-line today. This paper starts with an outline of the code that allows a mobile phone to operate over a particular air interface. This sets the baseline for a discussion of the security issues surrounding the change of this code from one that is fixed and downloaded once only, to code that is reconfigurable during the life of a product.     

Proof of a conjecture on irredundance perfect graphs

Let ir(G) and γ(G) be the irredundance number and the domination number of a graph G, respectively. A graph G is called irredundance perfect if ir(H)=γ(H), for every induced subgraph H of G. In this article we present a result which immediately implies three known conjectures on irredundance perfect graphs. © 2002 Wiley Periodicals, Inc. J Graph Theory 41: 292–306, 2002     

An evolution operator in semiclassical electrodynamics

An evolution operatior is described, which acts on the operators of a problem to take it into the solutions of the corresponding problem of semiclassical electrodynamics.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 12, pp. 66–69, November, 1981.