A fully soft-switched extended-period quasi-resonantpower-factor-correction circuit

This paper presents the design criteria, procedure, and implementation of a soft-switched power-factor-correction (PFC) circuit based on the extended-period quasi-resonant (EPQR) principles. All power electronic devices including switches and diodes in the circuit are fully soft switched. The design method is demonstrated in a prototype circuit. The operating principles are confirmed with computer simulation and experimental results. A comparison of the EP-QR operation and zero-voltage-transition (ZVT) pulse-width modulation (PWM) method     

Densification involved in the UV-based photosensitivity of silicaglasses and optical fibers

A comprehensive survey of photosensitivity in silica glasses and optical fiber is reviewed. Recent work on understanding the mechanisms contributing to germanium or aluminum doped fiber photosensitivity is discussed within the framework of photoelastic densification models     

Soft commutation in capacitive idling converters

The capacitive idling converters derived from the Cuk, SEPIC, Zeta, and flyback topologies allow soft commutation of power switches without the need for additional circuitry, making it possible to increase the switching frequency while maintaining high efficiency     

Fractal error for detecting man-made features in aerial images

A technique is proposed for aiding photointerpreters in detecting man-made features in aerial reconnaissance images. The technique, which uses a metric called fractal error, is based on the observed propensity of natural image features to fit a fractional Brownian motion model. Man-made features usually do not fit this model well, and consequently the fractal error metric may be used as a discriminant function for detecting man-made scene features     

The strip-loaded hybrid-mode feed horn

A novel typed of hybrid-mode feed horn is presented. It comprises a hollow conical dielectric waveguide whose outer surface is metallized, and whose inner surface is coated with circumferentially oriented conducting strips. It may be designed to have mimimal cross polarization at two arbitrarily separated frequencies, as for a dual depth corrugated horn. Compared to the corrugated horn, it has the potential of lower weight and lower price. Small horns will have some cross polarization due to undesired radiation from the fields transmitted within the dielectric.     

Systematic characterization of Cl2 reactive ion etchingfor improved ohmics in AlGaN/GaN HEMTs

Pre-metal-deposition reactive ion etching (RIE) was performed on an Al_0.3Ga_0.7N/AlN/GaN heterostructure in order to improve the metal-to-semiconductor contact resistance. An optimum AlGaN thickness for minimizing contact resistance was determined. An initial decrease in contact resistance with etching time was explained in terms of removal of an oxide surface layer and/or by an increase in tunnelling current with the decrease of the AlGaN thickness. The presence of a dissimilar surface layer was confirmed by an initial nonuniform etch depth rate. An increase in contact resistance for deeper etches was experienced. The increase was related to depletion of the two-dimensional (2-D) electron gas (2-DEG) under the ohmics. Etch depths were measured by atomic force microscopy (AFM). The contact resistance decreased from about 0.45 Ωmm for unetched ohmics to a minimum of 0.27 Ωmm for 70 Å etched ohmics. The initial thickness of the AlGaN layer was 250 Å. The decrease in contact resistance, without excessive complications on device processing, supports RIE etching as a viable solution to improve ohmic contact resistance in AlGaN/GaN HEMTs     

New insights in polarity-dependent oxide breakdown for ultrathin gate oxide

In this work, a quantitative analysis is applied to resolve the newly reported polarity-dependent charge-to-breakdown (Q/sub BD/) data from thick oxides of 6.8 nm down to ultrathin oxides of 1.9 nm. Three independent sets of Q/sub BD/ data, i.e., n/sup +/poly/NFET stressed under inversion and accumulation, and p/sup +/ poly/PFET under accumulation are carefully investigated. The Q/sub BD/ degradation observed for p-type anodes, either poly-Si or Si-substrate, can be nicely understood with the framework of maximum energy released by injected electrons. Thus, this work provides a universal and quantitative account for a variety of experimental observations in the time-to-breakdown (T/sub BD/) and Q/sub BD/ polarity-dependence of oxide breakdown.     

Security issues for downloaded code in mobile phones

'Software defined radio' (SDR) is a technology that will appear in future generations of mobile phones, i.e. following the third-generation mobile phone technology that is currently being defined and developed. Early versions of 'pragmatic' SDR will allow the terminal to be reconfigured at any level of its protocol stack. Ultimately, the 'pure' SDR technology will allow a mobile phone or terminal to have its air interface software configured or reconfigured by other software (or software parameters) that have been downloaded to the terminal, e.g. over the air, or from a remote server via the Internet and one's personal computer (PC). A number of security issues arise with downloaded code that implements the air interface functions, and these may not be obvious simply from looking at the way PC software is updated on-line today. This paper starts with an outline of the code that allows a mobile phone to operate over a particular air interface. This sets the baseline for a discussion of the security issues surrounding the change of this code from one that is fixed and downloaded once only, to code that is reconfigurable during the life of a product.