The effect of olefinic terminal chains on the mesomorphic properties of 4,4'-disubstituted diphenyldiacetylenes

New diphenyldiacetylenes of the type with A, B = H and/or F; m = 0, 1; n = 1-4; and X = C n H 2n + 1 , F, CF 3 or CN were synthesized and their mesomorphic properties determined by hot stage polarizing microscopy and DSC. When m = 0, all of these compounds showed only a nematic phase except when X = CF 3 when both nematic and smectic A phases were seen. Both clearing and melting temperatures were higher than those reported for substitution with the corresponding alkyl chains but the much larger increase in clearing temperatures produced considerably wider nematic phases. Eutectic mixtures of a few of these olefins yielded nematic materials also having much wider temperature ranges and higher clearing temperatures than the eutectic mixtures of the alkyl compounds, while retaining their high birefringence and low viscosities. Such materials are of interest for beam-steering devices.

Four of the diacetylenes with m = 1 ( A, B = H) were also prepared ( X = C 6 H 13 , F, n = 2, 3). When X was C 6 H 13 ( n = 2), the nematic range was smaller in the 2- than in the 1-olefin but wider than in the alkyl series. When X = F, either no nematic phase or a monotropic one was observed, whereas the 1-olefins gave a much wider nematic phase. Both transition temperatures were lower than those for the corresponding 1-olefin and alkyl analogues. The compound with X = C 6 H 13 and n = 2 had a melting temperature below room temperature.     

Microstructural assessment of InN-on-GaN films grown by plasma-assisted MBE

The structural properties of InN thin films, grown by rf plasma-assisted molecular beam epitaxy on Ga-face GaN/Al₂O₃(0001) substrates, were investigated by means of conventional and high resolution electron microscopy. Our observations showed that a uniform InN film of total thickness up to 1 μm could be readily grown on GaN without any indication of columnar growth. A clear epitaxial orientation relationship of , was determined. The quality of the InN film was rather good, having threading dislocations as the dominant structural defect with a density in the range of 10⁹–10¹⁰ cm⁻². The crystal lattice parameters of wurtzite InN were estimated by electron diffraction analysis to be a=0.354 nm and c=0.569 nm, using Al₂O₃ as the reference crystal. Heteroepitaxial growth of InN on GaN was accomplished by the introduction of a network of three regularly spaced misfit dislocation arrays at the atomically flat interface plane. The experimentally measured distance of misfit dislocations was 2.72 nm. This is in good agreement with the theoretical value derived from the in-plane lattice mismatch of InN and GaN, which indicated that nearly full relaxation of the interfacial strain between the two crystal lattices was achieved.     

New Heat-Resistant Polyimidates Derived from Bisphenols and Mono- and Dicarboxylic Acid Imidoyl Chlorides

New polyimidates were prepared from bisphenols and mono- and dicarboxylic acid imidoyl chlorides. The structures of the polymers were determined, and their physicochemical, chemical, and thermal properties were studied. The possibility of preparing film and compression materials with good mechanical characteristics from these polymers was examined.     

89-GHz fT room-temperature silicon MOSFETs

The authors report the implementation of deep-submicrometer Si MOSFETs that at room temperature have a unity-current-gain cutoff frequency (f_T) of 89 GHz, for a drain-to-source bias of 1.5 V, a gate-to-source bias of 1 V, a gate oxide thickness of 40 Å, and a channel length of 0.15 μm. The fabrication procedure is mostly conventional, except for the e-beam defined gates. The speed performance is achieved through an intrinsic transit time of only 1.8 ps across the active device region     

Two-limit problems for almost semicontinuous processes defined on a Markov chain

We consider almost upper-semicontinuous processes defined on a finite Markov chain. The distributions of functionals associated with the exit of these processes from a finite interval are studied. We also consider some modifications of these processes. __________ Translated from Ukrains’kyi Matematychnyi Zhurnal, Vol. 59, No. 4, pp. 555–565, April, 2007.     

Circular core polarization-maintaining optical fibers withelliptical stress-induced cladding

The reproducible technology for producing high-birefringence fibers with stress-induced elliptical cladding and circular core is described. The authors have obtained fibers that have a birefringence of about (1-3) 10^-4, a mode coupling parameter of about (2-7) 10 ^-5 m^-1, and loss of less than 0.5 dB/km at 1.6 μm. The authors have found effects restricting the capability of test fibers to maintain the state of linear polarization     

Ultrashort pulse laser osteotomy

Laser treatment of bone tissue has already been the subject of many studies to find substitutes for mechanical instruments that are nowadays used in implantology and orthopaedics. Mainly lasers with pulse durations in the μs region have been tested leaving surface features that are not always satisfactory. Therefore, in the present study laser osteotomy has been performed with a 330 fs Yb:glass laser, λ = 1040 nm, at a pulse repetition rate of 1 kHz. For bovine spongiosa, compacta, and cartilage, the ablation thresholds as well as the ablation rates for various pulse energies have been determined. Additionally, quadratic areas have been ablated in bone tissue. The remaining morphology has been analyzed via scanning electron microscopy. Laser ablation has also been performed with an Er, Cr:YSGG laser, λ = 2780 nm, PRR = 20 Hz, τ ～ 50 μs. The results of USPL and Erbium laser ablation are compared.     

Diffusion,solubility, and electrical properties of scandium and praseodymium in silicon

An integrated study of diffusion, solubility, and electrical properties of scandium and praseodymium in silicon annealed in various media and temperature ranges (1100–1280 °C) was performed for the first time. The tracer technique, autoradiography, measurements of isothermic capacity and current relaxation, conductivity, and the Hall effect were used for the investigations. The diffusion parameters, solubility, and an acceptor character of scandium and praseodymium impurities in silicon were determined. __________ Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 1, pp. 75–77, January, 2007.     

Vortex ring generation due to the coalescence of a water drop at a free surface

 Results are presented of an experimental investigation of vortex ring formation by a fluid drop contacting a free surface with negligible velocity. The pool fluid is mixed with fluorescein dye, and a laser sheet is used to illuminate a plane of the flow. A series of representative images is recorded by a CCD camera and speculation is made regarding specific sources of vorticity flux through the free surface. Two scaling analyses previously presented by other investigators are demonstrated to be equivalent under the assumptions of this experiment, and they provide the motivation for a series of test runs in which the duration of the coalescence process, τ_*, is related to variations in drop diameter L and fluid surface tension σ. Experimental results are in agreement with the analyses, showing τ_*∼σ^-1/2 and τ_*∼L ^3/2. Received: 22 December 1995 / Accepted: 15 October 1996