High-gain pseudomorphic InGaAs base ballistic hot-electron device

A high-gain ballistic hot-electron device is described. The GaAs-AlGaAs heterostructure device, with a 21-mm-thick pseudomorphic In _0.12Ga_0.88As base, had a current gain of 27 at 77 K and 41 at 4.2 K. As characteristically seen in ballistic devices, transfer into the L valley limited the maximum gain. The Γ-L valley separation in the strained In_0.12Ga_0.88As was estimated to be about 380 meV     

The impact of new product development acceleration approaches on speed and profitability: lessons for pioneers and fast followers

This work investigates the impact of nine new product development (NPD) acceleration approaches (supplier involvement, lead user involvement, speeding up activities and tasks, reduction of parts and components, training and rewarding of employees, implementation of support systems and techniques, stimulating interfunctional cooperation, emphasis on the customer, and simplification of organizational structure) on development speed and new product profitability. Our findings from 233 manufacturing firms show that lead user involvement and training/rewarding of employees increase both development speed and profitability. Supplier involvement, speeding up activities and tasks, and a simplification of the organizational structure also enhance development speed, while an emphasis on the customer has an additional positive impact on new product profitability. Both new product speed and profitability increase firm financial performance. Our results further show that pioneers and fast followers should not select the same NPD acceleration approaches as the speed and profitability impact of the majority of the acceleration approaches depends on the new product strategy of the firm. These results are important as they provide guidance for pioneers and fast followers regarding which NPD acceleration approaches to select in order to enhance speed and profitability and, hence, firm financial performance.     

Evaluation of Digitally Encoded Layer‐by‐layer Coated Microparticles as Cell Carriers

To obtain more biologically relevant data there is a growing interest in the use of living cells for assaying the biological activity of unknown chemical compounds. Density ‘multiplex’ cell‐based assays, where different cell types are mixed in one well and simultaneously investigated upon exposure to a certain compound are beginning to emerge. To be able to identify the cells they should be attached to microscopic carriers that are encoded. This paper investigates how digitally encoded microparticles can be loaded with cells while keeping the digital code in the microcarriers readable. It turns out that coating the surface of the encoded microcarriers with polyelectrolytes using the layer‐by‐layer (LbL) approach provides the microcarriers with a ‘highly functional’ surface. The polyelectrolyte layer allows the growth of the cells, allows the orientation of the cell loaded microcarriers in a magnetic field, and does not hamper the reading of the code. It has further been shown that the cells growing on the polyelectrolyte layer can become transduced by adenoviral particles hosted by the polyelectrolyte layer. It is concluded that the digitally encoded microparticles are promising materials for use in biomedical and pharmaceutical in‐vitro research where cells are used as tools.     

AlGaN-based quantum-well heterostructures for deep ultraviolet light-emitting diodes grown by submonolayer discrete plasma-assisted molecular-beam epitaxy

Features of plasma-assisted molecular-beam epitaxy of AlGaN compounds at relatively low temperatures of the substrate (no higher than 740°C) and various stoichiometric conditions for growth of the nitrogen- and metal-enriched layers are studied. Discrete submonolayer epitaxy for formation of quantum wells and n-type blocking layers without varying the fluxes of components was used for the first time in the case of molecular- beam epitaxy with plasma activation of nitrogen for the nanostructures with the Al _x Ga_{1 ? x} N/Al _y Ga_{1 ? y} N quantum wells. Structural and optical properties of the Al _x Ga_{1 ? x} N layers in the entire range of compositions (x = 0–1) and nanostructures based on these layers are studied; these studies indicate that there is photoluminescence at room temperature with minimum wavelength of 230 nm. Based on the analysis of the photoluminescence spectra for bulk layers and nanoheterostructures and their temperature dependences, it is concluded that there are localized states in quantum wells. Using the metal-enriched layers grown on the c-Al₂O₃ substrates, heterostructures for light-emitting diodes with Al _x Ga_{1 ? x} N/Al _y Ga_{1 ? y} N quantum wells (x = 0.4–0.5, y = x + 0.15) were obtained and demonstrated electroluminescence in the ultraviolet region of the spectrum at the wavelength of 320 nm.     

Optical properties of doped bismuth telluride crystals in the region of plasma effects

The optical properties of bismuth telluride crystals doped with donor-and acceptor-type impurities are studied. The fact that energy corresponding to the resonance frequency of plasma oscillations of free charge carriers (plasmons) approaches the band-gap energy is detected in the infrared spectral region, where the main elementary excitations in the electronic system of these materials are observed. The mentioned approach of energies varies the intensity of electron-plasmon interaction, which affects the recombination processes in the materials widely used for the fabrication of thermoelectric energy converters.     

An efficient electron-beam-pumped semiconductor laser for the green spectral range based on II–VI multilayer nanostructures

Emission characteristics of an electron-beam-pumped Cd(Zn)Se/ZnMgSSe semiconductor laser are studied. The laser’s active region consists of a set of ten equidistant ZnSe quantum wells containing fractional-monolayer CdSe quantum-dot inserts and a waveguide formed by a short-period superlattice with the net thickness of ～0.65 μm. Lasing occurs at room temperature at a wavelength of 542 nm. Pulsed power as high as 12 W per cavity face and an unprecedentedly high efficiency of ～8.5% are attained for the electron-beam energy of 23 keV.