首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   1611818篇
  免费   32283篇
  国内免费   8505篇
化学   719005篇
晶体学   20732篇
力学   76350篇
综合类   108篇
数学   246934篇
物理学   389765篇
无线电   199712篇
  2021年   14888篇
  2020年   17482篇
  2019年   17631篇
  2018年   16485篇
  2017年   14654篇
  2016年   31078篇
  2015年   22190篇
  2014年   32974篇
  2013年   78931篇
  2012年   44505篇
  2011年   45158篇
  2010年   42975篇
  2009年   47021篇
  2008年   47126篇
  2007年   45343篇
  2006年   48725篇
  2005年   42645篇
  2004年   42177篇
  2003年   38967篇
  2002年   39207篇
  2001年   39152篇
  2000年   33970篇
  1999年   30094篇
  1998年   27873篇
  1997年   27608篇
  1996年   27119篇
  1995年   24841篇
  1994年   24336篇
  1993年   23765篇
  1992年   23962篇
  1991年   24083篇
  1990年   22908篇
  1989年   22440篇
  1988年   21700篇
  1987年   20368篇
  1986年   19219篇
  1985年   25680篇
  1984年   26674篇
  1983年   22486篇
  1982年   23804篇
  1981年   23000篇
  1980年   22255篇
  1979年   22359篇
  1978年   23462篇
  1977年   23066篇
  1976年   22694篇
  1975年   21442篇
  1974年   21043篇
  1973年   21550篇
  1972年   15722篇
排序方式: 共有10000条查询结果,搜索用时 15 毫秒
101.
102.
103.
104.
105.
106.
By tuning the length and rigidity of the spacer of bis(biurea) ligands L, three structural motifs of the A2L3 complexes (A represents anion, here orthophosphate PO43?), namely helicate, mesocate, and mono‐bridged motif, have been assembled by coordination of the ligand to phosphate anion. Crystal structure analysis indicated that in the three complexes, each of the phosphate ions is coordinated by twelve hydrogen bonds from six surrounding urea groups. The anion coordination properties in solution have also been studied. The results further demonstrate the coordination behavior of phosphate ion, which shows strong tendency for coordination saturation and geometrical preference, thus allowing for the assembly of novel anion coordination‐based structures as in transition‐metal complexes.  相似文献   
107.
A new amino‐functionalized strontium–carboxylate‐based metal–organic framework (MOF) has been synthesized that undergoes single crystal to single crystal (SC‐to‐SC) transformation upon desolvation. Both structures have been characterized by single‐crystal X‐ray analysis. The desolvated structure shows an interesting 3D porous structure with pendent ?NH2 groups inside the pore wall, whereas the solvated compound possesses a nonporous structure with DMF molecules on the metal centers. The amino group was postmodified through Schiff base condensation by pyridine‐2‐carboxaldehyde and palladium was anchored on that site. The modified framework has been utilized for the Suzuki cross‐coupling reaction. The compound shows high activity towards the C?C cross‐coupling reaction with good yields and turnover frequencies. Gas adsorption studies showed that the desolvated compound had permanent porosity and was microporous in nature with a BET surface area of 2052 m2 g?1. The material also possesses good CO2 (8 wt %) and H2 (1.87 wt %) adsorption capabilities.  相似文献   
108.
In many organic electronic devices functionality is achieved by blending two or more materials, typically polymers or molecules, with distinctly different optical or electrical properties in a single film. The local scale morphology of such blends is vital for the device performance. Here, a simple approach to study the full 3D morphology of phase‐separated blends, taking advantage of the possibility to selectively dissolve the different components is introduced. This method is applied in combination with AFM to investigate a blend of a semiconducting and ferroelectric polymer typically used as active layer in organic ferroelectric resistive switches. It is found that the blend consists of a ferroelectric matrix with three types of embedded semiconductor domains and a thin wetting layer at the bottom electrode. Statistical analysis of the obtained images excludes the presence of a fourth type of domains. The criteria for the applicability of the presented technique are discussed. © 2015 Wiley Periodicals, Inc. J. Polym. Sci., Part B: Polym. Phys. 2015 , 53, 1231–1237  相似文献   
109.
110.
Bochkareva  N. I.  Ivanov  A. M.  Klochkov  A. V.  Kogotkov  V. S.  Rebane  Yu. T.  Virko  M. V.  Shreter  Y. G. 《Semiconductors》2015,49(6):827-835
Semiconductors - It is shown that the emission efficiency and the 1/f noise level in light-emitting diodes with InGaN/GaN quantum wells correlate with how the differential resistance of a diode...  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号