首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   437315篇
  免费   3836篇
  国内免费   1323篇
化学   212322篇
晶体学   6204篇
力学   15545篇
综合类   8篇
数学   40354篇
物理学   115424篇
无线电   52617篇
  2019年   3622篇
  2018年   4725篇
  2017年   4532篇
  2016年   6808篇
  2015年   4155篇
  2014年   6506篇
  2013年   17245篇
  2012年   12228篇
  2011年   15074篇
  2010年   10968篇
  2009年   11313篇
  2008年   15162篇
  2007年   15810篇
  2006年   15022篇
  2005年   13613篇
  2004年   12440篇
  2003年   11424篇
  2002年   11189篇
  2001年   12880篇
  2000年   10446篇
  1999年   8264篇
  1998年   7105篇
  1997年   7158篇
  1996年   6777篇
  1995年   6007篇
  1994年   6036篇
  1993年   5857篇
  1992年   6437篇
  1991年   6459篇
  1990年   6149篇
  1989年   6121篇
  1988年   5830篇
  1987年   5263篇
  1986年   5005篇
  1985年   6521篇
  1984年   6612篇
  1983年   5498篇
  1982年   5831篇
  1981年   5613篇
  1980年   5318篇
  1979年   5643篇
  1978年   5924篇
  1977年   5781篇
  1976年   5667篇
  1975年   5343篇
  1974年   5313篇
  1973年   5419篇
  1972年   3691篇
  1968年   3550篇
  1967年   3928篇
排序方式: 共有10000条查询结果,搜索用时 8 毫秒
71.
Features of plasma-assisted molecular-beam epitaxy of AlGaN compounds at relatively low temperatures of the substrate (no higher than 740°C) and various stoichiometric conditions for growth of the nitrogen- and metal-enriched layers are studied. Discrete submonolayer epitaxy for formation of quantum wells and n-type blocking layers without varying the fluxes of components was used for the first time in the case of molecular- beam epitaxy with plasma activation of nitrogen for the nanostructures with the Al x Ga1 ? x N/Al y Ga1 ? y N quantum wells. Structural and optical properties of the Al x Ga1 ? x N layers in the entire range of compositions (x = 0–1) and nanostructures based on these layers are studied; these studies indicate that there is photoluminescence at room temperature with minimum wavelength of 230 nm. Based on the analysis of the photoluminescence spectra for bulk layers and nanoheterostructures and their temperature dependences, it is concluded that there are localized states in quantum wells. Using the metal-enriched layers grown on the c-Al2O3 substrates, heterostructures for light-emitting diodes with Al x Ga1 ? x N/Al y Ga1 ? y N quantum wells (x = 0.4–0.5, y = x + 0.15) were obtained and demonstrated electroluminescence in the ultraviolet region of the spectrum at the wavelength of 320 nm.  相似文献   
72.
73.
74.
75.
A one-dimensional bulk reaction model for the oxidation of nickeltitanium is formulated, with preferential oxidation of titaniumbeing included. The modelling is directed at the better understandingof the dominant mechanisms involved in the oxidation processand their significance for the biocompatibility of the alloy.Two different regimes for the relative diffusivities of oxygenand the metals are investigated. By assuming fast bulk reactions,different asymptotic structures emerge in different parameterregimes and the resulting models take the form of moving boundaryproblems. Different profiles of nickel concentration are obtained:in particular a nickel-rich layer (observed in practice) ispresent below the oxide/metal interface for the case when oxygenand the metals diffuse at comparable rates.  相似文献   
76.
In this study, a novel stepwise extraction method has been examined. The guest molecules housed between the helices of the clathrate δ form of syndiotactic polystyrene can be removed completely with this method. A systematic study of the preparation of a solvent‐free mesophase (emptied clathrate) membrane, its helical and residual solvent contents, and its structural transformations has been performed. In this first attempt, an enhancement in the TTGG helical content has been observed in the extracted membrane, and a conceptual mechanism is proposed. © 2002 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 41: 269–273, 2003  相似文献   
77.
The optical properties of bismuth telluride crystals doped with donor-and acceptor-type impurities are studied. The fact that energy corresponding to the resonance frequency of plasma oscillations of free charge carriers (plasmons) approaches the band-gap energy is detected in the infrared spectral region, where the main elementary excitations in the electronic system of these materials are observed. The mentioned approach of energies varies the intensity of electron-plasmon interaction, which affects the recombination processes in the materials widely used for the fabrication of thermoelectric energy converters.  相似文献   
78.
We present closed-form expressions for the average bit error probability (ABEP) of BPSK, QPSK and M-QAM of an amplify-and-forward average power scaling dual-hop relay transmission, over non-identical Nakagami-m fading channels, with integer values of m. Additionally, we evaluate in closed-form the ABEP under sufficiently large signal-to-noise ratio for the source-relay link, valid for arbitrary rn. Numerical and simulation results show the validity of the proposed mathematical analysis and point out the effect of the two hops unbalanced fading conditions on the error performance.  相似文献   
79.
Emission characteristics of an electron-beam-pumped Cd(Zn)Se/ZnMgSSe semiconductor laser are studied. The laser’s active region consists of a set of ten equidistant ZnSe quantum wells containing fractional-monolayer CdSe quantum-dot inserts and a waveguide formed by a short-period superlattice with the net thickness of ~0.65 μm. Lasing occurs at room temperature at a wavelength of 542 nm. Pulsed power as high as 12 W per cavity face and an unprecedentedly high efficiency of ~8.5% are attained for the electron-beam energy of 23 keV.  相似文献   
80.
By applying a combination of characterisation tools, changes in structural and superconducting properties with nominal Mg non‐stoichiometry in MgxB2 are found. The non‐stoichiometry produces enhanced in‐field critical current densities (Jc's) and upper critical field / irreversibility field (Hc2/Hirr(T)) values. Upper critical fields of ~ 21 T (4.2 K) were obtained in nominal Mg‐deficient samples compared to ~ 17 T (4.2 K) for near‐stoichiometric samples.  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号