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51.
52.
Journal of Structural Chemistry - An analysis is presented for the results obtained in the studies initiated by A. E. Shvelashivili, Corresponding Member, Academy of Sciences of Georgia, and... 相似文献
53.
54.
Pan Huang Dawen Xu Robert M. Reich Felix Kaiser Boping Liu Fritz E. Kühn 《Tetrahedron letters》2019,60(24):1574-1577
A first example of an Et2Zn mediated silylation of 1-aklynes is reported. A series of functional groups are tolerated in this reaction. Mechanistic studies support Zn alkynilides as intermediates in the reaction. This reaction protocol provides a practical method for the preparation of alkynylsilanes and expands the application of organometallic zinc in organic synthesis. 相似文献
55.
Note on B-splines, wavelet scaling functions, and Gabor frames 总被引:3,自引:0,他引:3
Grochenig K. Janssen A.J.E.M. Kaiblinger N. Pfander G.E. 《IEEE transactions on information theory / Professional Technical Group on Information Theory》2003,49(12):3318-3320
Let g be a continuous, compactly supported function on such that the integer translates of g constitute a partition of unity. We show that the Gabor system (g,a,b), with window g and time-shift and frequency-shift parameters a,b>0 has no lower frame bound larger than 0 if b=2,3,... and a>0. In particular, (g,a,b) is not a Gabor frame if g is a continuous, compactly supported wavelet scaling function and if b=2,3,... and a>0. We give an example for our result for the case that g=B/sub 1/, the triangle function supported by [-1,1], by showing pictures of the canonical dual corresponding to (g,a,b) where ab=1/4 and b crosses the lines N=2,3,. 相似文献
56.
The structure, chemical composition, and magnetic properties of electrochemically deposited nanocrystalline Co-Ni-Fe films
were investigated using a number of techniques. A high saturation magnetic induction up to B
s
= 21 kG was attained. An enhancement of the saturation magnetization compared to the ideal anticipated one was revealed,
which correlated with the nonlinear behavior of the structural phase composition and lattice parameters with the change of
the composition.
The text was submitted by the authors in English. 相似文献
57.
E. Griese Prof. Dr.-Ing. 《e & i Elektrotechnik und Informationstechnik》2003,120(6):186-191
Optical interconnection technology on the printed circuit board level is a key technology for future microelectronic equipment. The consideration of functional, technological, and economical requirements results in a hybrid solution, where electrical and optical interconnects are integrated into one substrate called electrical optical printed circuit board. The significant part of the entire design process for electrical optical printed circuit boards is marked by the design supporting modelling and simulation of optical interconnects. Based on an abstract model for an entire optical interconnect a simulation model for optical multimode-waveguides is presented, taking into account all significant waveguide properties. Apart from that, the modeling of active components (laser- and photo-diodes) is addressed. 相似文献
58.
Experimental and numerical assessment of gate-lag phenomena in AlGaAs-GaAs heterostructure field-effect transistors (FETs) 总被引:1,自引:0,他引:1
Verzellesi G. Mazzanti A. Basile A.F. Boni A. Zanoni E. Canali C. 《Electron Devices, IEEE Transactions on》2003,50(8):1733-1740
Gate-lag effects are characterized in AlGaAs-GaAs heterostructure field-effect transistors (HFETs) by means of measurements and numerical device simulations. Gate lag increasingly affects device switching at increasing ungated recess extension, suggesting that responsible deep levels be located at the ungated, recess surface of the HFET. Gate lag diminishes by making the off-state gate-source voltage less negative and by increasing the drain bias. Increasing the temperature makes the turn-on transient faster at low drain bias, while slightly delaying it at high drain bias. Numerical device simulations accounting for acceptor-like traps at the ungated surface predict gate-lag phenomena in good agreement with experiments, reproducing correctly the observed bias and temperature dependences. Simulations show that surface states behave, during the turn-on transient, as hole traps capturing holes attracted at the ungated surface by the negative trapped charge. 相似文献
59.
Hook T.B. Brown J. Cottrell P. Adler E. Hoyniak D. Johnson J. Mann R. 《Electron Devices, IEEE Transactions on》2003,50(9):1946-1951
Lateral scattering of retrograde well implants is shown to have an effect on the threshold voltage of nearby devices. The threshold voltage of both NMOSFETs and PMOSFETs increases in magnitude for conventional retrograde wells, but for triple-well isolated NMOSFETs the threshold voltage decreases for narrow devices near the edge of the well. Electrical data, SIMS, and SUPREM4 simulations are shown that elucidate the phenomenon. 相似文献
60.
The phenomenon of persistent tunneling photoconductivity was studied using the tunneling spectroscopy technique at liquid-helium temperature: the separation between the unoccupied levels in a δ-doped layer at the GaAs surface decreased after illumination. This decrease was due to an increase in the width of the quantum well of the δ-doped layer. For photon energies hv exceeding the GaAs band gap E g , this increase in the width of the quantum well was related to the accumulation of positive charge in the depth of GaAs induced by the generation of the electron-hole pairs and photoionization of deep centers. For hv < E g (including the case of CO2 laser), only photoionization is important. The experimental data agree with the self-consistent calculations. The critical temperature for the effect has been determined (T c = 45 K); at higher temperatures, the effect disappears. 相似文献