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201.
The article is concerned with oscillation of nonautonomous neutral dynamic delay equations on time scales. Sufficient conditions are established for the existence of bounded positive solutions and for oscillation of all solutions of this equation. Some results extend known results for difference equations when the time scale is the set Z of positive integers and for differential equations when the time scale is the set R of real numbers.  相似文献   
202.
X-ray photoelectron spectroscopy (XPS) is used to probe oxidation states of Si species in particles deposited using a pulsed ion-beam evaporation method. The effects of He ambient gas, ion beam intensity and post-treatments on the oxides composition and oxygen content have been studied. It is found that presence of He ambient gas led to a profound oxidation of Si species as compared to that prepared in vacuum at the same ion-beam ablation energy, i.e. both increase of SiO2 component and oxygen concentration in the oxides coverage. The deposition in He also resulted in an increase of oxygen concentration even under lower ablation intensity, but a higher Si suboxides concentration. It is revealed that the reaction between Si and O was controlled by the ion beam intensity (temperature of Si plasma) and the gas ambient (collision probability of Si and O species). The difference in structure of oxide layers for samples obtained under various conditions is discussed based on the results of XPS analyses.  相似文献   
203.
In this paper, we study the dynamical behavior for a 4-dimensional reversible system near its heteroclinic loop connecting a saddle-focus and a saddle. The existence of infinitely many reversible 1-homoclinic orbits to the saddle and 2-homoclinic orbits to the saddle-focus is shown. And it is also proved that, corresponding to each 1-homoclinic (resp. 2-homoclinic) orbit F, there is a spiral segment such that the associated orbits starting from the segment are all reversible 1-periodic (resp. 2-periodic) and accumulate onto F. Moreover, each 2-homoclinic orbit may be also accumulated by a sequence of reversible 4-homoclinic orbits.  相似文献   
204.
Device degradation behaviors of typical-sized n-type metal-induced laterally crystallized polycrystalline silicon thin-film transistors were investigated in detail under two kinds of dc bias stresses: hot-carrier (HC) stress and self-heating (SH) stress. Under HC stress, device degradation is the consequence of HC induced defect generation locally at the drain side. Under a unified model that postulates, the establishment of a potential barrier at the drain side due to carrier transport near trap states, device degradation behavior such as asymmetric on current recovery and threshold voltage degradation can be understood. Under SH stress, a general degradation in subthreshold characteristic was observed. Device degradation is the consequence of deep state generation along the entire channel. Device degradation behaviors were compared in low Vd-stress and in high Vd-stress condition. Defect generation distribution along the channel appears to be different in two cases. In both cases of SH degradation, asymmetric on current recovery was observed. This observation, when in low Vd-stress condition, is tentatively explained by dehydrogenation (hydrogenation) effect at the drain (source) side during stress  相似文献   
205.
High power red light was generated from a periodically-poled stoichiometric LiTaO3 (PPSLT) by single-pass frequency doubling of a diode-side-pumped, Q-switched Nd:YAG laser at 1319 nm. An average power of 2.4 W of the 660 nm red light was obtained at the fundamental power of ∼5.4 W with the conversion efficiency up to 44.4% and with low fluctuation down to 2%. The high efficiency and stability at the red output indicate that it is a practical method to construct a reliable compact red laser. PACS 42.70.Mp; 42.79.Nv; 42.55.Xi  相似文献   
206.
采用射频磁控溅射技术在Pt/Ti/SiO2/Si(100)衬底上生长了掺镧钛酸铅(PLT)铁电薄膜.用X射线衍射技术(XRD)研究了PLT薄膜结晶性能,结果表明PLT薄膜为(111)择优取向钙钛矿相织构.使用原子力显微镜(AFM)和压电响应力显微镜(PFM)分别观察了PLT薄膜的表面形貌和对应区域的电畴结构.PFM观察显示PLT薄膜中存在90°纳米带状畴,电畴的极化为首尾相接的低能量的排列方式,带状畴的宽度为20-60nm.研究了PLT10铁电薄膜的制备条件与性能之间的关系.发现在优化条件下制备的PLT10铁电薄膜的介电常数εr为365、介电损耗tgδ为0.02,热释电系数γ为2.18×10-8C·(cm2·K)-1,可以满足制备非制冷红外探测器的需要.  相似文献   
207.
本文通过直接数值模拟对均匀各向同性湍流中颗粒对湍流的变动作用进行了研究.颗粒相的体积分数很小而质量载荷足够大,以至于颗粒之间的相互作用可以忽略不计,而重点考虑颗粒与湍流间能量的交换。颗粒对湍流的反向作用使得湍动能的耗散率增强,以至于湍动能的衰减速率增大.湍动能的衰减速率随颗粒惯性的增大而增大。三维湍动能谱显示,颗粒对湍动能的影响在不同的尺度上是不均匀的。在低波数段,流体带动颗粒,而高波数段则相反.  相似文献   
208.
The tunneling of a giant spin at excited levels is studied theoretically in mesoscopic magnets with a magnetic field at an arbitrary angle in the easy plane. Different structures of the tunneling barriers can be generated by the magnetocrystalline anisotropy, the magnitude and the orientation of the field. By calculating the nonvacuum instanton solution explicitly, we obtain the tunnel splittings and the tunneling rates for different angle ranges of the external magnetic field ( θ H = π/2 and π/2 < θ H < π). The temperature dependences of the decay rates are clearly shown for each case. It is found that the tunneling rate and the crossover temperature depend on the orientation of the external magnetic field. This feature can be tested with the use of existing experimental techniques. Received 12 March 2001 and Received in final form 18 October 2001  相似文献   
209.
对碳纳米管(CNT)掺杂MgB2超导体磁场处理后的行为进行了研究. 结果表明,CNT掺杂MgB2超导体经5T脉冲磁场处理后临界电流密度Jc(H)在低磁场下提高了2—3倍,高场下提高一个数量级以上,扫描电镜结果显示CNT沿着处理磁场方向规则排列并且成为MgB2基体的形核中心和高效的磁通钉扎中心. 关键词: 2')" href="#">MgB2 碳纳米管 脉冲磁场处理  相似文献   
210.
朱海平  郑春龙 《物理学报》2006,55(10):4999-5006
利用拓展的Riccati方程映射法与变量分离法,得到了(2+1)维广义Nizhnik-Novikov-Veselov(GNNV)系统新的含有两个任意函数的相当广义的变量分离严格解.根据其中的周期波解,找到了该系统的复合波,即在周期波背景下的孤立波,并简要讨论了其演化行为. 关键词: GNNV系统 拓展Riccati映射 周期波解 孤立波  相似文献   
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