Spin-relaxation and magnetoresistance in FM/SC/FM tunnel junctions

The effect of spin relaxation on tunnel magnetoresistance (TMR) in a ferromagnet/superconductor/ferromagnet (FM/SC/FM) double tunnel junction is theoretically studied. The spin accumulation in SC is determined by balancing of the spin-injection rate and the spin-relaxation rate. In the superconducting state, the spin-relaxation time τ_s becomes longer with decreasing temperature, resulting in a rapid increase of TMR. The TMR of FM/SC/FM junctions provides a useful probe to extract information about spin-relaxation in superconductors.     

几种N-取代马来酰胺酸辅酶模型的核磁共振研究

我们对8种N-取代马来酰胺酸辅酶模型与不同类型的亲核试剂反应后生成的产物进行了¹H、¹³C NMR的研究, 测得¹H、¹³C谱化学位移,研 究探讨其规律性, 并测试了IR谱和元素分析.     

广义Hénon映射的滑模变结构控制同步

基于可线性化的非线性离散变结构跟踪控制方法实现了广义Hénon映射混沌系统的同步.广义Hénon映射的混沌吸引子比Hénon映射的混沌吸引子要复杂得多,对于保密通信来说,这种复杂性正是所期望的.提出的同步方法允许参数有适当的失配程度,这对工程实现是非常有利的,理论分析和仿真结果证实了该方法的有效性 关键词： 广义Hénon映射 混沌 同步 变结构控制     

Multivalued differential equations on closed convex sets in Banach spaces

New derivation results for integrands and multifunctions via the Lipschitzean approximations are obtained. Applications to multivalued differential equations on closed convex sets are presented.     

Characterisation of sub-100 nm-MOS-transistors processed by optical lithography and a sidewall-etchback technique

This paper describes the fabrication of NMOS-transistors with a geometric gate length of down to 50 nm using conventional optical lithography and a modified sidewall-etchback process. Based on measurements the transistors are characterised and their device parameters are compared to simulations. Finally the procedures for further optimisation of the process will be explained.     

Lithographic and pattern transfer of a novel deep-UV photoresist: ARCH2

We have developed a novel chemically amplified deep-UV photoresist called ARCH2. ARCH2 displays a resolution of<0.23μm with a DOF of 1.0μm at 0.25μm. This material also displays superior time delay stability (>8 hours). The post exposure bake (PEB) temperature was varied from 100°C to 120°C and the PEB time was varied from 60s to 180s. This had very little effect on the CD of the resist profiles. Preliminary etching experiments in a conventional reactive ion etcher were then carried out using CF₄ to etch TiN. In these experiments the ARCH2 etched at a similar rate as conventional Novolac.     

Cyclic voltammetric studies of certain industrially potential iron chelate catalysts

 For the analysis of infrared spectroscopic bands and complex patterns partial cross correlation functions of a sample spectrum with reference spectra are calculated. The chosen ranges of the spectra are based on empirical knowledge of infrared spectrum structure correlations. The normalised maxima of the partial cross correlation functions are interpreted as fuzzy truth values and are combined by fuzzy logical operators. By application of that procedure larger common substructures will be derived from the reference spectra than by a maximum common substructure search based on the complete spectra. Received: 30 October 1996/Revised: 24 February 1997/Accepted: 26 February 1997     

Resonance phenomena of π-mode forming in multi-element gratings

An analysis of resonances of scattering from multi-element grating formed by a finite number of resonant elements is presented. It has been shown that gratings with three and more elements on its period can support the π-mode. The π-mode of a grating is characterized by the existence of the regions in the vicinity of the grating and along its period where the electromagnetic field has opposite phases. The existence and excitation of the π-mode in finite gratings with resonant cells formed by several scatterers having open cavities have been studied. The particular case of the grating with cells formed by three identical slotted cylinders has been considered in detail. An application of gratings which support the π-mode in electron-vacuum oscillators of millimeter waves for efficient deceleration of electrons and extracting energy from electron beam is discussed.