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11.
Xiaoming Zhou Martin Jacobsson Henk Uijterwaal Piet Van Mieghem 《International Journal of Communication Systems》2008,21(6):643-663
Although packet delay and loss are two important parameters of the Internet performance, to the best of our knowledge, the evolution of large‐scale IPv6 delay and loss performance has previously not been studied. In this paper, we analyze more than 600 end‐to‐end IPv6 paths between about 26 testboxes of RIPE Network Coordination Centre over two years, and compare the delay and loss performance over time with their IPv4 counterparts. We present and discuss the measurement methodologies and show that IPv6 paths have a higher delay and loss than their IPv4 counterparts. The main reason for the worse performance stems from IPv6‐in‐IPv4 tunnels rather than from native IPv6 paths and such tunnels are still widely used today. Copyright © 2007 John Wiley & Sons, Ltd. 相似文献
12.
Zhen‐Feng Chen Hong‐Li Zhou Hong Liang Yan Li Ren‐Gen Xiong Xiao‐Zeng You 《应用有机金属化学》2003,17(11):883-884
The centrosymmetric binuclear structure of [Pb2(H‐Norf)2(ONO2)4]shows the geometry around each lead(II) atom to be distorted trigonal bipyramidal with Pb–O distances ranging from 2.357(3) to 2.769(4) Å. Copyright © 2003 John Wiley & Sons, Ltd. 相似文献
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Yue Chaoyu Peng Jiangde Zhou Bingkun 《Electronics letters》1989,25(2):101-102
A novel tunable all-fibre laser using a Nd/sup 3+/-doped single mode fibre ring resonator is reported. End pumped by an argon laser of 514.5 nm wavelength, the laser threshold was 1.45 mw, and a tuning range of 60 nm is obtained.<> 相似文献
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In-plane transport properties of Si/Si1-xGexstructure and its FET performance by computer simulation
Yamada T. Jing-Rong Zhou Miyata H. Ferry D.K. 《Electron Devices, IEEE Transactions on》1994,41(9):1513-1522
Transport properties of ungated Si/Si1-xGex are studied by an ensemble Monte Carlo technique. The device performance is studied with a quantum hydrodynamic equation method using the Monte Carlo results. The phonon-scattering limited mobility is enhanced over bulk Si, and is found to reach 23000 cm2/Vs at 77 K and 4000 cm2/Vs at 300 K. The saturation velocity is increased slightly compared with the bulk value at both temperatures. A significant velocity overshoot, several times larger than the saturation velocity, is also found. In a typical modulation-doped field-effect-transistor, the calculated transconductance for a 0.18 μm gate device is found to be 300 mS/mm at 300 K. Velocity overshoot in the strained Si channel is observed, and is an important contribution to the transconductance. The inclusion of the quantum correction increases the total current by as much as 15% 相似文献
20.
Excessive intermetallic compound (IMC) growth in solder joints will significantly decrease the reliability of the joints.
IMC growth is known to be influenced by numerous factors during the component fabrication process and in service. It is reported
that, other than temperature and holding time, stress can also influence the IMC growth behavior. However, no existing method
can be used to study the effect of stress state on IMC growth in a controlled manner. This paper presents a novel method to
study the effect of stress on interfacial IMC growth between Sn-Ag-Cu solder and a Cu substrate coated with electroless Ni
immersion Au (ENIG). A C-ring was used and in-plane bending induced tensile and compressive stresses were applied by tightening
the C-ring. Results revealed that in-plane compressive stress led to faster IMC growth as compared with in-plane tensile stress. 相似文献