首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   89034篇
  免费   13602篇
  国内免费   9439篇
化学   47422篇
晶体学   812篇
力学   3813篇
综合类   418篇
数学   7266篇
物理学   25182篇
无线电   27162篇
  2024年   384篇
  2023年   2234篇
  2022年   2978篇
  2021年   3745篇
  2020年   3593篇
  2019年   3323篇
  2018年   2874篇
  2017年   2891篇
  2016年   3909篇
  2015年   4276篇
  2014年   5075篇
  2013年   6408篇
  2012年   7555篇
  2011年   7482篇
  2010年   5529篇
  2009年   5438篇
  2008年   5790篇
  2007年   5148篇
  2006年   4713篇
  2005年   4110篇
  2004年   3104篇
  2003年   2591篇
  2002年   2489篇
  2001年   1968篇
  2000年   1714篇
  1999年   1899篇
  1998年   1502篇
  1997年   1365篇
  1996年   1310篇
  1995年   1164篇
  1994年   978篇
  1993年   835篇
  1992年   710篇
  1991年   613篇
  1990年   469篇
  1989年   349篇
  1988年   263篇
  1987年   213篇
  1986年   216篇
  1985年   191篇
  1984年   124篇
  1983年   113篇
  1982年   78篇
  1981年   62篇
  1980年   39篇
  1979年   22篇
  1976年   25篇
  1975年   31篇
  1973年   23篇
  1972年   21篇
排序方式: 共有10000条查询结果,搜索用时 0 毫秒
71.
在实际应用中,常常使用多个重写系统。本文主要讨论重写系统和的合流性,并给出了一个重写系统和具有合流性的充分条件。  相似文献   
72.
In the paper, commuting and stable feedback design for switched linear systems is investigated. This problem is formulated as to build up suitable state feedback controller for each subsystem such that the closed-loop systems are not only asymptotically stable but also commuting each other. A new concept, common admissible eigenvector set (CAES), is introduced to establish necessary/sufficient conditions for commuting and stable feedback controllers. For second-order systems, a necessary and sufficient condition is established. Moreover, a parametrization of the CAES is also obtained. The motivation comes from stabilization of switched linear systems which consist of a family of LTI systems and a switching law specifying the switching between them, where if all the subsystems are stable and commuting each other, then the total system is stable under arbitrary switching.  相似文献   
73.
The electrical conductivity was investigated for multi-walled carbon nanotubes (MWNTs) dissolved in chloroform and toluene, respectively. The electrical conductivity remarkably increased with increase in the content of MWNTs, which is in accordance with Archie's equation . Furthermore, a hypothesis of the electronic transport process was proposed to explain the difference between the solution and the solid compound. In addition, the temperature dependence of the electrical conductivity shows that log σ vs. 1/T exist in a good linear relationship. The activation energy of the electrical conductivity decreased with increase in concentration and an inflexion was observed at 60 °C in MWNT/toluene solution.  相似文献   
74.
A (w,r) cover‐free family is a family of subsets of a finite set such that no intersection of w members of the family is covered by a union of r others. A (w,r) superimposed code is the incidence matrix of such a family. Such a family also arises in cryptography as the concept of key distribution pattern. In the present paper, we give some new results on superimposed codes. First we construct superimposed codes from super‐simple designs which give us results better than superimposed codes constructed by other known methods. Next we prove the uniqueness of the (1,2) superimposed code of size 9 × 12, the (2,2) superimposed code of size 14 × 8, and the (2,3) superimposed code of size 30 × 10. Finally, we improve numerical values of upper bounds for the asymptotic rate of some (w,r) superimposed codes. © 2004 Wiley Periodicals, Inc.  相似文献   
75.
在介绍TI公司的12位串行、高速、微功耗A/D转换器ADS7822工作原理的基础上,以ADS7822在CO气体浓度监测仪的前向通道设计中的应用为例,讨论了它与AT2051单片机的硬件接口问题,给出了利用ADS7822进行A/D转换的51汇编语言程序,并做了详细注释.串行、微功耗及小型封装使ADS7822非常适合电池供电的智能便携式仪器采用.  相似文献   
76.
77.
In this paper, both low order and high order extensions of the Iyengar type inequality are obtained. Such extensions are the best possible in the same sense as that of the Iyengar inequality. hzrthermore, the Chebyshev central algorithms of integrals for some function classes and some related problems are also considered and investigated.  相似文献   
78.
本文利用Banach压缩映射原理,讨论了中立型时滞脉冲微分方程正解的存在性。  相似文献   
79.
Neodymium doped bismuth layer structure ferroelectrics (BLSFs) ceramics CaBi4−xNdxTi4O15 (x=0, 0.25, 0.50, 0.75) were prepared by solid-state reaction method. X-ray diffraction pattern showed that single phase was formed when x=0-0.75. The refined lattice parameters showed that a (b) axes decrease at x=0.25 and increase with more Nd3+ dopant. The effects of Nd3+ doping on the dielectric and ferroelectric properties of CaBi4Ti4O15 ceramics are studied. Nd3+ dopant decreased the Curie temperature linearly, and the dielectric loss, tan δ, as well. The remnant polarization of Nd3+ doped CaBi4Ti4O15 ceramics was increased by 80% at x=0.25, while more Nd3+ dopant decreased the remnant polarization. CaBi3.75Nd0.25Ti4O15 ceramics had the largest piezoelectric constant d33. The structure and properties of CaBi4−xNdxTi4O15 ceramics showed that Nd3+ may occupy different crystal locations when Nd3+ content x is less than 0.25 and more than 0.50.  相似文献   
80.
In this letter, we will report on a nitride-based light emitting diode with a mesa sidewall roughening process that increases light output power. The fabricated GaN-based light-emitting diode (LED) wafers were first treated through a photoelectrochemical (PEC) process. The Ga/sub 2/O/sub 3/ layers then formed around the GaN : Si n-type mesa sidewalls and the bottoms mesa etching regions. Selective wet oxidation occurred at the mesa sidewall between the p- and the n-type GaN interface. The light output power of the PEC treated LED was seen to increase by about 82% which was caused by a reduced index reflectance of GaN-Ga/sub 2/O/sub 3/-air layers, by a rough Ga/sub 2/O/sub 3/ surface, by a microroughening of the GaN sidewall surface, and by a selective oxidation step profile of the mesa sidewall that increases the light-extraction efficiency from the mesa sidewall direction. Consequently, this wet PEC treated process is suitable for high powered nitride-based LEDs lighting applications.  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号