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71.
任意型一维FIR数字滤波器设计新方法   总被引:1,自引:0,他引:1  
本文介绍了一种设计任意型(宽带、窄带、低阶、高阶、低通、高通、带通、带阻)一维FIR数字滤波器新方法.给出设计不同类型滤波器的统一方法。各种类型滤波器脉冲响应的设计公式简单、计算方便。该方法消除了Gibbs现象.不仅克服了优化设计中收敛速度、设计精度及初值选取等问题,而且减少设计高阶滤波器的时间。最后,本文给出了各种类型滤波器设计的仿真结果。  相似文献   
72.
本文详细叙述了DFB激光器的设计要点和新的工艺。采用一级全息光栅和二步液相外延法批量研制出高稳定单纵模工作的1.55μm分布反馈激光器(DFB—LD)。外延片成品率>40%。器件特性:25℃时阈值电流20mA,单面光功率>10mw,主边模抑制比SMSR达43dB(λ/4相移光栅),谱线宽度△ν-20dB=0.3nm,调制速率>1.8GHz。可靠性测试显示:高温监测光谱稳定,25°C时阈值退化率△Ith/t<0.3mA/kh,对应器件预估寿命将超过10万h。  相似文献   
73.
Centralized and distributed automated guided vehicle system (AGVS) models for materials handling, and the model for part processing are integrated into a single coherent model. This formulation can be used to collectively schedule and control the entire flexible manufacturing system (FMS) as opposed to the traditional separate scheduling of part processing and material handling. The two AGVS models are based on Petri nets and can be directly used in the scheduling method that uses Petri nets for formulation and heuristic search for solution. This method employs a global search to seek the optimal operation of an entire FMS. Scheduling examples are presented and the method compares favorably with the results simulated using heuristic dispatch rules  相似文献   
74.
In this paper, we present a technique for using an additional parallel neural network to provide adaptive enhancements to a basic fixed neural network-based nonlinear control system. This proposed parallel adaptive neural network control system is applicable to nonlinear dynamical systems of the type commonly encountered in many practical position control servomechanisms. Properties of the controller are discussed, and it is shown that if Gaussian radial basis function networks are used for the additional parallel neural network, uniformly stable adaptation is assured and the approximation error converges to zero asymptotically. In the paper, the effectiveness of the proposed parallel adaptive neural network control system is demonstrated in real-time implementation experiments for position control in a servomechanism with asymmetrical loading and changes in the load  相似文献   
75.
In this study, it is demonstrated that the incorporation of fluorine can enhance poly-Si/Si interfacial oxide break-up in the poly-Si emitter contacted p+-n shallow junction formation. The annealing temperature for breaking up the poly-Si/Si interfacial oxide has been found to be as low as 900°C. As a result, the junction depth of the BF2-implanted device is much larger than that of the boron-implanted device  相似文献   
76.
Recently, significant progress has been made in the development of timed process algebras for the specification and analysis of real-time systems. This paper describes a timed process algebra called ACSR, which supports synchronous timed actions and asynchronous instantaneous events. Timed actions are used to represent the usage of resources and to model the passage of time. Events are used to capture synchronization between processes. To be able to specify real systems accurately, ACSR supports a notion of priority that can be used to arbitrate among timed actions competing for the use of resources and among events that are ready for synchronization. The paper also includes a brief overview of other timed process algebras and discusses similarities and differences between them and ACSR  相似文献   
77.
The measured equation of invariance (MEI) has been previously introduced to efficiently and accurately handle the boundary truncation for finite methods. The present authors give a theoretical analysis that provides several important insights into the capabilities of the MEI. From the numerical study, they can explain why the MEI works better than one would expect. Both the theoretical and the numerical analyses demonstrate that the accuracy of the solution is dependent on the electrical size of the geometry as well as the distance between the mesh boundary and the geometry. From the analysis, the authors propose a new set of metrons that is less sensitive to the excitation than the previously proposed sinusoidal metrons  相似文献   
78.
A finite element partitioning scheme has been developed to reduce the computational costs of modeling electrically large geometries. In the partitioning scheme, the cylinder is divided into many sections. The finite element method is applied to each section independent of the other sections, and then the solutions in each section are coupled through the use of the tangential field continuity conditions between adjacent sections. Since the coupling matrix is significantly smaller than the original finite element matrix, it is expected that both the CPU time and memory costs can be significantly reduced. The partitioning scheme is coupled to the bymoment method to account for the boundary truncation. Numerical results are presented to demonstrate the efficiency and accuracy of the method  相似文献   
79.
A new simple method is described for synthesizing low-sidelobe sum and difference patterns with partially adaptive weights. By partially adaptive, we mean that only part of the weights are adapted for simultaneous nulling. These adaptive weights are shared by the sum and difference channels, leading to a significant reduction in the number of variable attenuators/phase shifters used, as compared to the fully adaptive implementation. An objective function is derived that yields different configurations of the shared adaptive weights. Numerical examples are presented to ascertain the efficacy of the new method for both point and extended interference  相似文献   
80.
A two-dimensional transient simulation of the gate lag phenomenon in GaAs MESFET's has been performed. Our results show that the charge exchanges in the population of the surface states at the ungated access region of FET's are responsible for this slow transient phenomenon. The measured “hole-trap-like” DLTS signal is directly related to the re-emission of the holes, trapped during the filling pulse. Higher gate pulse can cause more serious lag phenomenon due to larger modulation of surface charge density. Devices with shorter N+-gate spacing and lower surface state densities are shown to have less gate lag effect  相似文献   
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