The influence of music and stress on musicians’ hearing

Hearing and hearing disorders among classical and rock/jazz musicians was investigated. Pure tone audiometry was done in 140 classical and 139 rock/jazz musicians. The rock/jazz musicians answered a questionnaire concerning hearing disorders and psychosocial exposure. All results were compared to age appropriate reference materials. Hearing thresholds showed a notch configuration in both classical and rock/jazz musicians indicating the inclusion of high sound levels but an overall well-preserved hearing thresholds. Female musicians had significantly better hearing thresholds in the high-frequency area than males. Rock/jazz musicians showed slight worse hearing thresholds as compared to classical musicians. When assessing hearing disorders, a large number of rock/jazz musicians suffered from different hearing disorders (74%). Hearing loss, tinnitus and hyperacusis were the most common disorders and were significantly more frequent in comparison with different reference populations. Among classical musicians, no extended negative progress of the pure tone hearing threshold values was found in spite of the continued 16 years of musical noise exposure. In rock/jazz musicians, there was no relationships between psychosocial factors at work and hearing disorders. The rock/jazz musicians reported low stress and high degree of energy. On the average, the rock/jazz musicians reported higher control, lower stress and higher energy than a reference material of white-collar workers.     

Temperature measurements using fiber optic polarization interferometer

A novel measurement method of temperature based on the phenomena that the phase difference between principle polarization states in the optical retarder is function of temperature is described. The polarization state of optical beam is changed as it passes through the optical retarder, which depends on the temperature. The temperature of optical retarder is determined by comparison of the power difference between principal polarization states. We demonstrate successfully the temperature measurement by using a polarization maintaining fiber as the optical retarder. With a 100 mm length of the fiber optic retarder, the change rate of phase difference on temperature was 0.236 rad/°C and the measurement error was ±0.038°C over the temperature range of −2.6 – +3.4°C. With a 11.5 mm length of the fiber optic retarder, the change rate of phase difference on temperature was 0.021 rad/°C and the measurement error was ±0.79°C over the temperature range of −8.5 – +86.5°C.     

Phase formation and control of morphology in sputtered Cu-In alloy layers

The dependence of structural properties and surface morphology of Cu-In alloy layers on the composition and sputtering deposition sequence were investigated by X-ray diffraction, scanning electron microscopy and energy-dispersive X-ray spectroscopy. The properties of the co-sputtered alloy layers changed abruptly around the composition boundary when the Cu/In ratio reached 1/2. This can be explained by the effective heat of formation (EHF) model, which has been used to predict the sequence of phase formation for metal diffusion couples. The use of a co-sputtered alloy layer with a high In concentration was not suitable for fabricating solar cells, because the film had a very rough morphology due to large In islands formed on the CuIn₂ phase. However, it was possible to minimize this phase by In sputtering followed by co-sputtering with a Cu/In ratio of 1 (Cu-In/In/Glass). This permitted the fabrication of a homogeneous Cu-In alloy layer, which was not possible through the simple co-sputtering.     

Quantum Dynamics of Systems Connected by a Canonical Transformation

Quantum Hamiltonian systems corresponding to classical systems related by a general canonical transformation are considered. The differential equation to find the unitary operator, which corresponds to the canonical transformation and connects quantum states of the original and transformed systems, is obtained. The propagator associated with their wave functions is found by the unitary operator. Quantum systems related by a linear canonical point transformation are analyzed. The results are tested by finding the wave functions of the under-, critical-, and over-damped harmonic oscillator from the wave functions of the harmonic oscillator, free-particle system, and negative harmonic potential system, using the unitary operator to connect them, respectively.     

Investigation of the Li1+xV3O8 electrode–organic electrolyte interface by scanning photoelectron microscopy

To investigate the formation of a solid electrolyte interface (SEI) on the Li_1+xV₃O₈ electrode surface in the thermodynamic stability range of the organic electrolyte, we applied scanning photoelectron microscopy (SPEM) to a pristine electrode and to an electrode after ten cycles. The F K-edge absorption spectrum of the cycled electrode showed that LiF forms on the electrode surface during the lithium insertion–extraction process in the Li_1+xV₃O₈/Li cell. The photoelectron spectrum for the cycled electrode showed intense spectral features corresponding to Li 1s, F 2s, F 2p, and P 2p electron signals, whereas these spectral features were of negligible intensity for the pristine electrode. The above results give strong support for the formation of an SEI that consists of LiF and compounds containing phosphorus during operation of the battery. The SPEM images also revealed that the fluorine distribution on the surface of the cycled electrode was inhomogeneous.     

Theory of Switched RF Resonators

Transient characteristics of switched resonators have been studied. The resonators exhibit controllable impedance and energy storage behaviors during an alternating charging and discharging process. It is discovered that these unique characteristics of switched resonators can lead to novel RF envelope signal processing functions. The paper discusses the basic theory of switched resonators and the designing methodology of relevant RF signal processing applications. Two applications are presented as examples. The first example is a variable, reflective attenuator which uses the controllable impedance of the switched resonators to achieve different attenuation/reflection levels. In the second example, a simple, compact and efficient RF pulse compression technique based on the switched resonator concept is introduced. It utilizes the charging/discharging characteristics of the circuit resonator by varying the resonator's Q-factor. The approach compresses the duration of the modulated pulse without changing the phase characteristics of the RF carrier. The pulse compression technique can also be implemented with other type of resonators including distributed resonators, as demonstrated through the experiments     

掺杂铁电纳米粉的液晶的电光特性

铁电纳米粒子悬浮在向列相液晶母体中，增强介电各向异性，而且对施加的电场信号敏感。本文也展示了纳米粒子对所述复合材料可实现的总的相变的作用。这种方法也许可应用于设计新型显示材料。     

Bias-temperature instabilities of polysilicon gate HfO/sub 2/ MOSFETs

Bias-temperature instabilities (BTI) of HfO/sub 2/ metal oxide semiconductor field effect transistors (MOSFETs) have been systematically studied for the first time. NMOS positive BTI (PBTI) exhibited a more significant V/sub t/ instability than that of PMOS negative BTI (NBTI), and limited the lifetime of HfO/sub 2/ MOSFETs. Although high-temperature forming gas annealing (HT-FGA) improved the interface quality by passivating the interfacial states with hydrogen, BTI behaviors were not strongly affected by the technique. Charge pumping measurements were extensively used to investigate the nature of the BTI degradation, and it was found that V/sub t/ degradation of NMOS PBTI was primarily caused by charge trapping in bulk HfO/sub 2/ rather than interfacial degradation. Deuterium (D/sub 2/) annealing was found to be an excellent technique to improve BTI immunity as well as to enhance the mobility of HfO/sub 2/ MOSFETs.     

Polarity control of GaN epilayers grown on ZnO templates

We report the successful growth of Ga-polar GaN epilayers on O-polar ZnO templates pre-deposited on c-sapphire. Prior to GaN growth, NH₃ is exposed onto the ZnO template. The polarity of the GaN layers is confirmed by etching of the surface and by conversion beam electron diffraction (CBED), while the O-polar ZnO is confirmed by CBED. It is suggested that the NH₃ pre-exposure helps form a Zn₃N₂ layer, which possesses inversion symmetry and inverts the crystal from anion polar to cation polar.     

Trenched‐Sinker LDMOSFET (TS‐LDMOS) Structure for 2 GHz Power Amplifiers

This paper proposes a new LDMOSFET structure with a trenched sinker for high‐power RF amplifiers. Using a low‐temperature, deep‐trench technology, we succeeded in drastically shrinking the sinker area to one‐third the size of the conventional diffusion‐type structure. The RF performance of the proposed device with a channel width of 5 mm showed a small signal gain of 16.5 dB and a maximum peak power of 32 dBm with a power‐added efficiency of 25% at 2 GHz. Furthermore, the trench sinker, which was applied to the guard ring to suppress coupling between inductors, showed an excellent blocking performance below ?40 dB at a frequency of up to 20 GHz. These results confirm that the proposed trenched sinker should be an effective technology both as a compact sinker for RF power devices and as a guard ring against coupling.