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71.
We demonstrate multi-emitter Si/GexSi1-x n-p-n heterojunction bipolar transistors (HBT's) which require no base contact for transistor operation. The base current is supplied by the additional emitter contact under reverse bias due to the heavy doping of the emitter-base junction. Large-area HBT test structures exhibit good transistor characteristics, with current gain β≈400 regardless of whether the base current is supplied by a test base electrode or one of the emitter contacts. These devices have enhanced logic functionality because of emitter contact symmetry. Since device fabrication does not require base electrode formation, the number of processing steps can be reduced without significant penalty to HBT performance 相似文献
72.
A number of mismatch error-shaping schemes for oversampled DACs are compared. Simulation results are presented to show that such a comparison should take account of the distribution of the mismatch errors, since the pattern of errors present affects different algorithms in different ways. A scheme for improving the error tolerance of one mismatch shaping architecture is presented 相似文献
73.
A short-pulse 1.444-μm laser based on Nd:YAG technology has been demonstrated. The 1.444-μm is eye-safe. With the cavity-dump technique, a pulse of 50 m× and 14 ns was obtained. The beam quality was excellent with an M2 of 1.6 by the use of a telescopic resonator. Silicon-window polarizers were used to suppress the 1.06-μm radiation but showed 1.444-μm absorption as well 相似文献
74.
Polycarpou A.C. Balanis C.A. Aberle J.T. Birtcher C. 《Antennas and Propagation, IEEE Transactions on》1998,46(9):1297-1306
A three-dimensional finite-element method hybridized with the spectral/spatial domain method of moments is presented for the analysis of ferrite-tuned cavity-backed slot antennas. The cavity, which is partially filled with magnetized ferrite layers, is flush mounted on an infinite ground plane with possible dielectric or magnetic overlay. The antenna operates primarily in the ultrahigh-frequency band. The finite-element method is used to solve for the electric-field distribution inside the cavity, whereas the spectral-domain approach is used to solve for the exterior region. An asymptotic extraction of the exponential behavior of the Green's function followed by a spatial evaluation of the resulting integral is used to improve computational speed. Radar cross section, input impedance, return loss, gain, and efficiency of ferrite-tuned cavity-backed slots (CBS) are calculated for various biasing conditions. Numerical results are compared with experimental data 相似文献
75.
We report a comprehensive crosstalk investigation of a packaged InGaAsP/InP 4×4 semiconductor optical amplifier gate switch matrix, experimentally as well as theoretically. For a fully loaded switch with the same wavelength on all four inputs, all possible switching combinations are analyzed, thus yielding realistic crosstalk figures. Coherent and incoherent crosstalk phenomena are identified, and a switch crosstalk less than -40 dB has been measured 相似文献
76.
Bez R. Cantarelli D. Moioli L. Ortolani G. Servalli G. Villa C. Dallabora M. 《Electron Device Letters, IEEE》1998,19(2):37-39
A new method to erase a standard (double-poly, stacked-gate NOR-type) flash cell is proposed. The method, still using the tunneling mechanism to extract electrons from the floating gate, is based on the concept of keeping the electric field constant during the whole erasing operation. The new method has two main advantages with respect to the conventional one: (1) it does not depend on the supply voltage variation and (2) it allows a better reliability in terms of endurance-induced stress. Results have shown that flash device performances are greatly improved in terms of stability and endurance reliability up to one million cycles 相似文献
77.
Double-diffusive convection due to a cylindrical source submerged in a salt-stratified solution is numerically investigated
in this study. For proper simulation of the vortex generated around the cylinder, a computational domain with irregular shape
is employed. Flow conditions depend strongly on the thermal Rayleigh number, Ra
T
, and the buoyancy ratio, R
ρ. There are two types of onset of instability existing in the flow field. Both types are due to either the interaction of
the upward temperature gradient and downward salinity gradient or the interaction of the lateral temperature gradient and
downward salinity gradient. The onset of layer instability due to plume convection is due to the former, whereas, the onset
of layer instability of layers around the cylinder is due to the latter. Both types can be found in the flow field. The transport
mechanism of layers at the top of the basic plume belongs to former while that due to basic plume and layer around the cylinder
are the latter. The increase in Ra
T
reinforces the plume convection and reduces the layer numbers generated around the cylinder for the same buoyancy ratio.
For the same Ra
T
, the increase of R
ρ suppresses the plume convection but reinforces the layers generated around the cylinder. The profiles of local Nusselt number
reflects the heat transfer characteristics of plume convection and layered structure. The profiles of averaged Nusselt number
are between the pure conduction and natural convection modes and the variation is due to the evolution of layers.
Received on 13 September 1996 相似文献
78.
This paper studies a particular single-stage power-factor-correction (PFC) switching regulator employing a discontinuous-conduction-mode (DCM) boost-input cell and a continuous-current-mode (CCM) forward output cell. Although this single-stage PFC regulator can provide a reasonably high power factor when its PFC stage is operating in discontinuous mode, substantial reduction in line-current harmonics is possible by applying a suitable frequency-modulation scheme. This paper derives a frequency-modulation scheme and proposes a practical implementation using a simple translinear analog circuit. A quantitative analysis on the total harmonic distortion (THD) of the line current when the circuit is subject to a limited range of frequency variations is presented along with some considerations for practical design. Experimental data obtained from a prototype confirms the effectiveness of the proposed frequency-modulation scheme. The proposed analog translinear circuit allows custom integrated circuit implementation, making it a viable low-cost solution to the elimination of line-current harmonics in switching regulators 相似文献
79.
80.
A technique for SiO2 formation by liquid-phase deposition (LPD) at nearly room temperature for low-temperature processed (LTP) polysilicon thin-film transistor (poly-Si TFT) was developed. LPD SiO2 film with a lower P-etch rate shows a dense structure. LPD SiO2 also exhibits good electrical characteristics. LTP poly-Si thin-film transistors (TFTs) with LPD SiO 2 as the gate insulator have been fabricated and investigated. Their characteristics indicate performance adequate for their use as pixel transistors in liquid crystal displays (LCDs) 相似文献