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101.
A computably enumerable (c.e.) degree a is called nonbounding, if it bounds no minimal pair, and plus cupping, if every nonzero c.e. degree x below a is cuppable. Let NB and PC be the sets of all nonbounding and plus cupping c.e. degrees, respectively. Both NB and PC are well understood, but it has not been possible so far to distinguish between the two classes. In the present paper, we investigate the relationship between the classes NB and PC , and show that there exists a minimal pair which join to a plus cupping degree, so that PC ? NB . This gives a first known difference between NB and PC . (© 2003 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) 相似文献
102.
103.
Jin Sun Yihu Song Qiang Zheng Hong Tan Jie Yu Hong Li 《Journal of Polymer Science.Polymer Physics》2007,45(18):2594-2602
The reinforcement and nonlinear viscoelastic behavior have been investigated for silica (SiO2) filled solution‐polymerized styrene butadiene rubber (SSBR). Experimental results reveal that the nonlinear viscoelastic behavior of the filled rubber is similar to that of unfilled SSBR, which is inconsistent with the general concept that this characteristic comes from the breakdown and reformation of the filler network. It is interesting that the curves of either dynamic storage modulus (G′) or loss tangent (tan δ) versus strain amplitude (γ) for the filled rubber can be superposed, respectively, on those for the unfilled one, suggesting that the primary mechanism for the Payne effect is mainly involved in the nature of the entanglement network in rubbery matrix. It is believed there exists a cooperation between the breakdown and reformation of the filler network and the molecular disentanglement, resulting in enhancing the Payne effect and improving the mechanical hysteresis at high strain amplitudes. Moreover, the vertical and the horizontal shift factors for constructing the master curves could be well understood on the basis of the reinforcement factor f(φ) and the strain amplification factor A(φ), respectively. The surface modification of SiO2 causes a decrease in f(φ), which is ascribed to weakeness of the filler–filler interaction and improvement of the filler dispersion. However, the surface nature of SiO2 hardly affects A(φ). © 2007 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 45: 2594‐2602, 2007 相似文献
104.
铝电解电容器用橡皮塞中铁的测定 总被引:1,自引:0,他引:1
主要研究了用硫氰酸钾作显色剂,用分光光度法测定橡皮塞中铁含量的方法。并对国产和进口橡皮塞做了比较,为铝电解电容器质量水平的提高提供一条新思路。 相似文献
105.
106.
Z P Li C S Tang J Y Su 《Science in China. Series B, Chemistry, life sciences & earth sciences》1991,34(5):599-605
Results from a systematic experiment on isolated perfused rat heart and isolated myocytes of adult rat showed that the mechanism of calcium influx during myocardial ischemia-reperfusion is due to the development of intracellular sodium overload during ischemic period; on reperfusion, the high intracellular Na+ content activated the reverse direction of Na(+)-Ca2+ exchange over myocardial sarcolemma (SL), thus a large quantity of extracellular Ca2+ fluxed over the SL to the intracellular space, forming a condition of intracellular Ca2+ overload, which leads to irreversible damage of the myocardium. 相似文献
107.
Least-squares finite difference (LSFD) method, one of mesh-free methods, is used to solve slider air bearings problem through discritizing the generalized Reynolds equation into nonlinear systems of algebraic equations. Two approximation schemes for the linearization of these equations are presented and compared. And, some new techniques to search supporting points for the reference node in the mesh-free method were proposed and explored. Therefore, these improvements eliminate some potential limitation of the LSFD method previously published and further facilitate its employment in complex slider models. Advanced step slider as an example of negative pressure sliders is simulated and verified using the improved LSFD mesh-free method in head disk systems. 相似文献
108.
J. A. Ratto Paul T. Inglefield R. A. Rutowski K.-L. Li Alan Anthony Jones Ajoy K. Roy 《Journal of Polymer Science.Polymer Physics》1987,25(7):1419-1430
Carbon-13 and proton spin-lattice relaxation times were measured at two field strengths on solutions 10% by weight of two polycarbonates in C2D2Cl4 from ?20 to +120°C. The first polycarbonate is an asymmetrically substituted form with one chlorine on one of the two phenylene aromatic rings of the bisphenol unit, whereas the second polycarbonate is symmetrically substituted with two chlorines on each of the two rings. The nuclear spin relaxation data are interpreted in terms of several local motions likely in these polymers. Segmental motion was described by the Hall–Helfand correlation function. Segmental motion in the monosubstituted polycarbonate is somewhat slower than in unsubstituted polycarbonate, whereas segmental motion in the tetrasubstituted polycarbonate is considerably slower. Phenylene ring rotation is observed in unsubstituted polycarbonate and in the monosubstituted polycarbonate above 40°C. Below 40°C in the monosubstituted species, and at all temperatures in the tetrasubstituted species, ring rotation is replaced by ring libration as the predominant motion contributing to spin lattice relaxation. In addition, the rotational motion of the two types of rings in the asymmetric monosubstituted form are very similar although not identical. The substituted ring is slightly less mobile than the rings of unsubstituted polycarbonate. This indicates a strong coupling of ring motion, although the coupling leads to less than synchronous motion. Methyl group rotation is present in both polymers and is little affected by the various structural modifications. 相似文献
109.
Jian-Shu Li 《Mathematische Annalen》1992,292(1):747-761
Supported in part by NSF grant No. DMS-9003999 相似文献
110.
InAs channel field-effect transistors of 1-μm gate length were grown by molecular beam epitaxy and observed to operate at channel electric fields (20 kV/cm) higher than previously demonstrated and several times greater than the threshold for impact ionization in bulk InAs. Voltage gains on the order of 10 were observed with transconductances as high as 414 mS/mm and output conductances as low as 33 mS/mm. These voltage gains are comparable to those of GaAs-based devices and are the highest observed for InAs channel devices. The results demonstrate the potential for practical room-temperature operation of InAs FETs 相似文献