High temperature superconducting thin films for microwave filters

YBa₂Cu₃O_7-δ and Tl₂Ba₂CaCu₂O₈ thin films for microwave filters were synthesized by pulsed laser deposition and the two-step thalliation process. Substrate quality requirements and the relation of thin film morphology, microstructure with microwave surface resistance were discussed.     

分子高激发振动态的动力学特性研究

运用经典哈密顿代数方法,结合单摆的运动特点表示两个化学键之间的振动耦合.对水分子高激发态下两个氧氢键(O—H)伸缩振动动力学的研究结果表明,靠近分界线的中间能级的相空间中较易出现混沌轨道,而较高或较低能级的相空间中则具有比较规则的周期运动 关键词： 高激发振动 共振 混沌     

超声波在废橡胶再生中应用的最新进展

全世界每年产生大量废旧橡胶，它们需要很长时间才能降解，这既污染环境，又浪费资源，解决此问题的唯一方法是再生利用。在众多再生方法中，新近出现的超声波脱硫再生法，被认为是最有希望的方法，本文详细地介绍了这方面的最新进展情况。     

Spin-relaxation and magnetoresistance in FM/SC/FM tunnel junctions

The effect of spin relaxation on tunnel magnetoresistance (TMR) in a ferromagnet/superconductor/ferromagnet (FM/SC/FM) double tunnel junction is theoretically studied. The spin accumulation in SC is determined by balancing of the spin-injection rate and the spin-relaxation rate. In the superconducting state, the spin-relaxation time τ_s becomes longer with decreasing temperature, resulting in a rapid increase of TMR. The TMR of FM/SC/FM junctions provides a useful probe to extract information about spin-relaxation in superconductors.     

几种N-取代马来酰胺酸辅酶模型的核磁共振研究

我们对8种N-取代马来酰胺酸辅酶模型与不同类型的亲核试剂反应后生成的产物进行了¹H、¹³C NMR的研究, 测得¹H、¹³C谱化学位移,研 究探讨其规律性, 并测试了IR谱和元素分析.     

广义Hénon映射的滑模变结构控制同步

基于可线性化的非线性离散变结构跟踪控制方法实现了广义Hénon映射混沌系统的同步.广义Hénon映射的混沌吸引子比Hénon映射的混沌吸引子要复杂得多,对于保密通信来说,这种复杂性正是所期望的.提出的同步方法允许参数有适当的失配程度,这对工程实现是非常有利的,理论分析和仿真结果证实了该方法的有效性 关键词： 广义Hénon映射 混沌 同步 变结构控制     

Multivalued differential equations on closed convex sets in Banach spaces

New derivation results for integrands and multifunctions via the Lipschitzean approximations are obtained. Applications to multivalued differential equations on closed convex sets are presented.     

Characterisation of sub-100 nm-MOS-transistors processed by optical lithography and a sidewall-etchback technique

This paper describes the fabrication of NMOS-transistors with a geometric gate length of down to 50 nm using conventional optical lithography and a modified sidewall-etchback process. Based on measurements the transistors are characterised and their device parameters are compared to simulations. Finally the procedures for further optimisation of the process will be explained.     

Lithographic and pattern transfer of a novel deep-UV photoresist: ARCH2

We have developed a novel chemically amplified deep-UV photoresist called ARCH2. ARCH2 displays a resolution of<0.23μm with a DOF of 1.0μm at 0.25μm. This material also displays superior time delay stability (>8 hours). The post exposure bake (PEB) temperature was varied from 100°C to 120°C and the PEB time was varied from 60s to 180s. This had very little effect on the CD of the resist profiles. Preliminary etching experiments in a conventional reactive ion etcher were then carried out using CF₄ to etch TiN. In these experiments the ARCH2 etched at a similar rate as conventional Novolac.