On <Emphasis Type="Italic">s</Emphasis>-Elementary Super Frame Wavelets and Their Path-Connectedness

A super wavelet of length n is an n-tuple (ψ ₁,ψ ₂,…,ψ _n ) in the product space \(\prod_{j=1}^{n} L^{2}(\mathbb{R})\), such that the coordinated dilates of all its coordinated translates form an orthonormal basis for \(\prod_{j=1}^{n} L^{2} (\mathbb{R})\). This concept is generalized to the so-called super frame wavelets, super tight frame wavelets and super normalized tight frame wavelets (or super Parseval frame wavelets), namely an n-tuple (η ₁,η ₂,…,η _n ) in \(\prod_{j=1}^{n}L^{2} (\mathbb{R})\) such that the coordinated dilates of all its coordinated translates form a frame, a tight frame, or a normalized tight frame for \(\prod_{j=1}^{n} L^{2}(\mathbb{R})\). In this paper, we study the super frame wavelets and the super tight frame wavelets whose Fourier transforms are defined by set theoretical functions (called s-elementary frame wavelets). An m-tuple of sets (E ₁,E ₂,…,E _m ) is said to be τ-disjoint if the E _j ’s are pair-wise disjoint under the 2π-translations. We prove that a τ-disjoint m-tuple (E ₁,E ₂,…,E _m ) of frame sets (i.e., η _j defined by \(\widehat{\eta_{j}}=\frac{1}{\sqrt{2\pi}}\chi_{E_{j}}\) is a frame wavelet for L ²(?) for each j) lead to a super frame wavelet (η ₁,η ₂,…,η _m ) for \(\prod_{j=1}^{m} L^{2} (\mathbb{R})\) where \(\widehat{\eta_{j}}=\frac{1}{\sqrt{2\pi}}\chi_{E_{j}}\). In the case of super tight frame wavelets, we prove that (η ₁,η ₂,…,η _m ), defined by \(\widehat{\eta_{j}}=\frac{1}{\sqrt{2\pi}}\chi_{E_{j}}\), is a super tight frame wavelet for ∏_1≤j≤m L ²(?) with frame bound k ₀ if and only if each η _j is a tight frame wavelet for L ²(?) with frame bound k ₀ and that (E ₁,E ₂,…,E _m ) is τ-disjoint. Denote the set of all τ-disjoint s-elementary super frame wavelets for ∏_1≤j≤m L ²(?) by \(\mathfrak{S}(m)\) and the set of all s-elementary super tight frame wavelets (with the same frame bound k ₀) for ∏_1≤j≤m L ²(?) by \(\mathfrak{S}^{k_{0}}(m)\). We further prove that \(\mathfrak{S}(m)\) and \(\mathfrak{S}^{k_{0}}(m)\) are both path-connected under the ∏_1≤j≤m L ²(?) norm, for any given positive integers m and k ₀.     

Optical and electrical properties of porous silicon layer formed on the textured surface by electrochemical etching

Porous silicon(PS) layers were formed on textured crystalline silicon by electrochemical etching in HF-based electrolyte.Optical and electrical properties of the TMAH textured surfaces with PS formation are studied. Moreover,the influences of the initial structures and the anodizing time on the optical and electrical properties of the surfaces after PS formation are investigated.The results show that the TMAH textured surfaces with PS formation present a dramatic decrease in reflectance.The longer the anodizing time is,the lower the reflectance.Moreover,an initial surface with bigger pyramids achieved lower reflectance in a short wavelength range.A minimum reflectance of 3.86%at 460 nm is achieved for a short anodizing time of 2 min.Furthermore,the reflectance spectrum of the sample,which was etched in 3 vol.%TMAH for 25 min and then anodized for 20 min,is extremely flat and lies between 3.67%and 6.15%in the wavelength range from 400 to 1040 nm.In addition,for a short anodizing time,a slight increase in the effective carrier lifetime is observed.Our results indicate that PS layers formed on a TMAH textured surface for a short anodization treatment can be used as both broadband antireflection coatings and passivation layers for the application in solar cells.     

一款应用于生物传感器的1.2V-600nW 12bit 2kS/s的增量型模数转换器

This paper presents an ultra-low power incremental ADC for biosensor interface circuits.The ADC consists of a resettable second-order delta–sigma(°/ modulator core and a resettable decimation filter.Several techniques are adopted to minimize its power consumption.A feedforward path is introduced to the modulator core to relax the signal swing and linearity requirement of the integrators.A correlated-double-sampling(CDS)technique is applied to reject the offset and 1/f noise,thereby removing the integrator leakage and relaxing the gain requirement of the OTA.A simple double-tailed inverter-based fully differential OTA using a thick-oxide CMOS is proposed to operate in the subthreshold region to fulfill both an ultra-low power and a large output swing at 1.2 V supply.The signal addition before the comparator in the feedforward architecture is performed in the current domain instead of the voltage domain to minimize the capacitive load to the integrators.The capacitors used in this design are of customized metal–oxide–metal(MOM) type to reach the minimum capacitance set by the k T =C noise limit.Fabricated with a 1P6 M 0.18 m CMOS technology,the presented incremental ADC consumes600 n W at 2 k S/s from a 1.2 V supply,and achieves 68.3 d B signal to noise and distortion ratio(SNDR) at the Nyquist frequency and an FOM of 0.14 p J/conversion step.The core area is 100120 m2.     

重组家蚕核多角体病毒（rBmNPV）的复制及所载HuIFN－α基因的表达

报道了重组家蚕核多角体病毒（ＢｏｍｂｙｘｍｏｒｉｎｕｃｌｅａｒＰｏｌｙｈｅｄｒｏｓｉｓＶｉｒｕｓＢｍＮＰＶ）在家蚕细胞ＢｍＮ中复制的细胞病理学变化，除了不形成多角体以外，与野生型病毒相同．研究了病毒感染复数、细胞接种密度和细胞生长阶段对重组病毒复制和α－干扰素（ＩＦＮ－α）表达量的影响．在一定低感染复数时，α－干扰素的产量较高．对于重组病毒的复制，最适的细胞接种密度为３．６～７．０×１０５细胞／瓶．在细胞指数生长前期（４８～６０ｈ）接种重组病毒，对于获得较高的重组病毒复制效价和α－干扰素的产量都是有利的．     

CDMA现网接入失败测试分析及优化

本文通过对CDMA现网实际测试所采集的详细数据进行分析,着重介绍了CDMA网络接通率方面所涉及的案例,从而对分析CDMA网络运行中出现的接入失败问题起到一定的指导作用。     

3一致 C-超图的最小边数

混合超图是含有两类超边的超图,一类称为C-超边,一类称为D-超边,它们的区别主要体现在染色要求上．混合超图的染色,要求每一C-超边至少有两个点染相同的颜色,而每一D-超边至少有两个点染不同的颜色．所用的最大颜色数称为对应混合超图的上色数,所用的最小颜色数称为对应混合超图的下色数．上、下色数与边数有密切关系．作者在文献[2]中证明了具有最小上色数的3一致C-超图边数的一个下界为‘n(n-2)/3’,其中n为对应混合超图的顶点数．该文证明当n=2k 1时,该下界是可以达到的．     

GaAs MESFET栅取向效应中背栅的作用

根据压电效应模型,本文详细研究了压电电荷对GaAs MESFET沟道与衬底界面耗尽层的影响。认为正压电电荷比负压电电荷所引起的阀值电压漂移大,较好解释了(100)衬底上沿[011]和[011]取向的GaAs MESFET阈值电压非对称反向漂移的现象。     

非晶/微晶相变域硅薄膜及其太阳能电池

采用甚高频等离子体增强化学气相沉积（VHF-PECVD）法，成功制备出从非晶到微晶过渡区 域的硅薄膜. 样品的微结构、光电特性及光致变化的测量结果表明这些处于相变域的硅薄膜 兼具非晶硅优良的光电性质和微晶硅的稳定性. 用这种两相结构的材料作为本征层制备了p- i-n太阳能电池，并测量了其稳定性. 结果在AM15(100mW/cm²) 的光强下曝光 800—5000min后，开路电压略有升高，转换效率仅衰退了29%. 关键词： 相变域硅薄膜 光电特性 太阳能电池     

振荡限幅器型卫星电视接收解调器

本文着重介绍了振荡限幅器型门限扩展解调器的工作原理及工作条件,同时设计了一种振荡限幅器型卫星电视接收解调器。该解调器具有电路简单,性能良好,具有较低接收门限等特点,可用于接收苏联714MHz卫星电视节目。此解调器特别适用于一些接收场强较弱的地区。实验表明,该解调器门限改善量约可达3dB。