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91.
Sachin Joshi Sagnik Dey Michelle Chaumont Alan Campion Sanjay K. Banerjee 《Journal of Electronic Materials》2007,36(6):641-647
We demonstrate ultra-thin (<150 nm) Si1−x
Ge
x
dislocation blocking layers on Si substrates used for the fabrication of tensile-strained Si N channel metal oxide semiconductor
(NMOS) and Ge P channel metal oxide semiconductor (PMOS) devices. These layers were grown using ultra high vacuum chemical
vapor deposition (UHVCVD). The Ge mole fraction was varied in rapid, but distinct steps during the epitaxial layer growth.
This results in several Si1−x
Ge
x
interfaces in the epitaxially grown material with significant strain fields at these interfaces. The strain fields enable
a dislocation blocking mechanism at the Si1−x
Ge
x
interfaces on which we were able to deposit very smooth, atomically flat, tensile-strained Si and relaxed Ge layers for the
fabrication of high mobility N and P channel metal oxide semiconductor (MOS) devices, respectively. Both N and P channel metal
oxide semiconductor field effect transister (MOSFETs) were successfully fabricated using high-k dielectric and metal gates
on these layers, demonstrating that this technique of using ultra-thin dislocation blocking layers might be ideal for incorporating
high mobility channel materials in a conventional CMOS process. 相似文献
92.
93.
Various empirical theories of ultrasonic velocity have been applied to three binary liquid mixtures, under pressures up to
200 MPa and their validity have been tested. A pressure dependent study of ultrasonic velocities has been made at 303.15 K.
The agreement between theory and experiment is found to be quite satisfactory. 相似文献
94.
Ibon Alkorta Fernando Blanco Pere M. Deyà José Elguero Carolina Estarellas Antonio Frontera David Quiñonero 《Theoretical chemistry accounts》2010,126(1-2):1-14
This review covers two aspects concerning cooperativity in multiple weak bonds: a summary of literature results and a theoretical study of a complete series of model complexes. All the 15 combination of five weak bonds were explored: hydrogen bonds, hydric bonds, dihydrogen bonds, halogen bonds and ion–π interactions. Since in several cases there were no examples reported, a systematic exploration has been carried out on simple models at the MP2/aug-cc-pVTZ level. The results thus obtained have been analyzed using the atoms in molecules methodology. 相似文献
95.
This paper deals with estimation of parameters of a model of a complex repairable system with 3ne unit on operation and the remaining (N − 1) units as inactive standbys and having a repair facility. Various operating characteristics, namely, reliability, availability, mean time to failure of the system, s-expected numbers of repairs in (0, t], s-expected numbers of failures of the system in (0, t] are estimated under two censoring schemes namely, the type-I censoring and type-II censoring schemes. 相似文献
96.
We investigate approximate smoothing schemes for a class of hidden Markov models (HMMs), namely, HMMs with underlying Markov chains that are nearly completely decomposable. The objective is to obtain substantial computational savings. Our algorithm can not only be used to obtain aggregate smoothed estimates but can be used also to obtain systematically approximate full-order smoothed estimates with computational savings and rigorous performance guarantees, unlike many of the aggregation methods proposed earlier 相似文献
97.
This paper considers the power-control problem for a fading channel in an information-theoretic framework. We derive power-control schemes to optimize ergodic capacity, outage capacity, and capacity with a service outage constraint. The novelty in the paper lies in the use of a two-time-scale fading process and its implications for the channel-state information available at the transmitter. 相似文献
98.
We have studied the analytic solutions for modified electron acoustic double layers and solitary waves in a four component plasma system viz. two electrons and two ions, one positive and the other negative. It has been shown that DL solution does not exist when the temperatures of the free and the trapped particles are considered to be same for all the free species. On the other hand, DL solutions are found to exist when the effects of the reflected electrons (hot) are considered. The velocity and thickness of the DL have been valculated. 相似文献
99.
100.