Synthesis and biological activity of S-oxo-[(methylthio)-methyl]cysteinols

A convenient route was developed to synthesize S-oxo-[(methylthio)-methyl]cysteinols on a large scale from cheap l-serine as the starting material. The structures of diastereoisomers were determined by NMR, CD spectra, and X-ray diffraction analysis. All four diastereoisomers were examined for their ability to inhibit certain bacteria from growing.     

关于一类具有相同非负群逆和M-P逆的非负矩阵的进一步研究

1引言设A是n阶非负方阵．设矩阵方程(1)AXA=A,(2)XAX=X,(3)(AX)~T= AX,(4)(XA)~T=XA,(5)AX=XA．A具有非负广义逆是指存在非负方阵X满足方程(1)～(4),并记为A~(?)．A具有非负群逆是指存在非负方阵X满足方程(1),(2),(5),并记为A~#．在A~(?)存在的前提下,两者相同的充分必要条件有(a)AA~(?)=A~(?)A；(b)A~(?)=p(A),其     

Fluoroalkylation of aromatics: An intramolecular radical cyclization of 4-chloro-1,1,2,2,3,3,4,4-octafluorobutylbenzenes

In the presence of sodium dithionite and DMSO, the intramolecular radical cyclization of 4-chloro-1,1,2,2,3,3,4,4-octafluorobutylbenzenes is achieved to give the corresponding cyclic compounds in moderate to good yields.     

Silicon-to-steel bonding using rapid thermal annealing

This paper presents the rapid, low-temperature bonding between silicon and steel using the rapid thermal annealing process. Three different thin-film adhesion layer systems including silver, gold, and nickel were utilized as the intermediate bonding material to assist the eutectic Pb/Sn bonding between silicon and steel. The bonding temperature was set at 220/spl deg/C for 20 s, with a 20-s ramp-up time. Five experiments were conducted to determine the strength of the bond, including static tensile and compressive four-point bend tests, axial extension tests, tensile bending fatigue tests, and corrosion resistance tests. The test results have shown that the gold adhesion layer is the most robust, demonstrating minimal creep during fatigue tests, no delamination during the tensile or compressive four-point bend tests, and acceptable strength during the axial extension tests. Additionally, all adhesion layers have withstood four months of submersion in various high-temperature solutions and lubricants without failure. Simulations of the axial stresses and strains that developed during the four-point bend and axial extension tests were performed and showed that the presence of the silicon die provides a local reinforcement of the bond as observed in the experimental tests.     

Nanoscale structural characteristics and electron field emission properties of transition metal–fullerene compound TiC60 films

Transition-metal compound TiC₆₀ thin films were grown by co-deposition from two separated sources of fullerene C₆₀ powder and titanium. Study of structural properties of the films, by Raman spectroscopy, atomic force microscopy, and scanning tunneling spectroscopy reveals that the films have a deformed C₆₀ structure with certain amount of sp³ bonds and a rough surface with a large number of nanoclusters. z–V tunnelling spectroscopic measurements suggest that several charge transport mechanisms are involved in as the tip penetrates into the thin film. Conventional field electron emission (FEE) measurements show a high emission current density of 10 mA/cm² and a low turn-on field less than 8 V/μm, with the field enhancement factors being 659 and 1947 for low-field region and high-field region, respectively. By exploiting STM tunneling spectroscopy, local FEE on nanometer scale has also been characterized in comparison with the conventional FEE. The respective field enhancement factors are estimated to be 99–355 for a gap varying from 36 to 6 nm. The enhanced FEE of TiC₆₀ thin films can be ascribed to structural variation of C₆₀ in the films and the electrical conducting paths formed by titanium nanocrystallites embedded in C₆₀ matrix.     

三核铜（I）配合物的合成与荧光光谱

室温下，通过双核配合物[Cu(dppm)(NO3)]2(dppm=双二苯基膦甲烷)与四苯基硼钠在甲醇和二氯甲烷混合溶剂中反应制备了三核铜(I)配合物[Cu3(dppm)3(NO3)(OH)](NO3)，经过红外光谱、热重分析、核磁和ES-MS等现代分析手段表征了配合物的物理化学性质，并进一步研究了配合物在室温下的荧光光谱特征。     

3-D MCM封装技术及其应用

介绍了超大规模集成电路（VLSI）用的3-D MCM封装技术的最新发展，重点介绍了3-D MCM封装垂直互连工艺，分析了3-D MCM封装技术的硅效率、复杂程度、热处理、互连密度、系统功率与速度等问题，并对3-D MCM封装的应用作了简要说明。     

碳纳米管阵列、捆束的三步升温工艺制备及其形貌与结构

使用结构简单的单温炉设备，通过三步升温热解二茂铁、三聚氰氨混合物方法，在二氧化硅、多晶陶瓷基底上分别合成了碳纳米管阵列、碳纳米管捆束.使用扫描电子显微镜、透射电子显微镜、电子能量损失谱和x射线光电子能谱对合成样品进行了结构和成分分析.结果显示：两种基底上合成的纳米管均为多壁纯碳管；生长于光滑二氧化硅表面的碳纳米管具有高度取向性和一致的外径，长度为10—40μm.碳纳米管采取催化剂顶端生长模式并展示出类杯状形貌；生长于粗糙多晶陶瓷表面的碳纳米管捆束随机取向，碳纳米管直径为15—80nm，长度在几百微米，展示 关键词： 碳纳米管 热解法 三步升温工艺     

弱电系统中的地线干扰与接地方法

介绍了地线的干扰机理以及减小地线干扰的对策和接地的基本方法.在电子电路中,地线不仅为电路提供一个电位公共参考点,而且也为电流提供一条能够流回源的低阻抗路径.由于地线存在阻抗,当电流流过地线时,会在地线上产生电压差,从而形成地线干扰,严重时将会影响电路的正常工作.减小或消除地线干扰的主要方法是减小地线的阻抗和地线电流.为此,可以针对不同的信号频率及干扰性质,根据系统的结构和功能采用相应的接地方式,将接地、屏蔽及滤波等措施结合使用.     

Pyroelectricity and Spontaneous Polarization in [111] Oriented 0.955 Pb（Zn1/3Nb2/3）O3-0.045PbTiO3 Single Crystals

We report that the measurements of the pyroelectric current of the pre-poled [111]-oriented 0.955 Pb（Zn1/3Nb2/3） O3-0.045 PbTiO3 （PZN-4.5%PT） single crystals can shed some light on the phase transition and spontaneous polarization characters of this material in a similar way to measures of remanent polarization and dielectric properties. The pyroelectric current is measured and the corresponding spontaneous polarization is calculated as a function of temperature with various poling fields added during cooling the sample from 200℃ to room temperature. Critical electric field of 0.061 k V/cm is found to be essential to induce the intermediate ferroelectric orthorhombic phase between the ferroelectric rhombohedral and tetragonal phases. Below the critical field, the polarization increases almost linearly with the increase of poling field. At the critical field, the polarization at 30OC increases abruptly from 14μC/cm^2 for a poling field of O.06kV/cm to 29.5μC/cm^2 for a poling field of 0.061 kV/cm, and afterwards, increases slowly and saturates to 31 μC/cm^2 for poling fields beyond 0.55 kV/cm.