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941.
Summary Some limitation problems for gas discharge excimer lasers, when scaled to a high pulsed energy output with high repetition rate are discussed. As an example, we present some experimental results obtained with an X-ray preionized (10×10×100) cm3 active volume, low-repetition-rate-operated gas discharge XeCl laser system. ENEA student. ENEA guest.  相似文献   
942.
Perhydrotriphenylene‐based channel‐forming inclusion compounds (ICs) and thin films made of polyphenylenevinylene (PPV)‐type oligomers with terminal alkoxy groups are investigated and compared in a combined experimental and theoretical approach. Interchromophore interactions and host‐guest interactions are elucidated by UV/Vis and Raman spectroscopy. The impact of the local environment of the chromophore on the optical and photophysical properties is discussed in light of quantum‐chemical calculations. In stark contrast to thin films where preferential side‐by‐side orientation leads to quenching of photoluminescence (PL) via non‐emissive traps, the ICs are found to be attractive materials for opto‐electronic applications: they offer high chromophore concentrations, but at the same time behave as quasi‐isolated entities of tightly packed, well‐oriented objects with high PL quantum yields and the possibility of color tuning.  相似文献   
943.
944.
The General Packet Radio Service (GPRS) extends the Global System Mobile Communication (GSM) by introducing a packet-switched transmission service. This paper analyzes the GPRS behavior under critical conditions. In particular, we focus on outages, which significantly impact the GPRS dependability. In fact, during outage periods, the cumulative number of users trying to access the service grows proportionally over time. When the system resumes its operations, the overload caused by accumulated users determines a higher probability of collisions on resources assignment and, therefore, a degradation of the overall QoS. This paper adopts a stochastic activity network modeling approach for evaluating the dependability of a GPRS network under outage conditions. The major contribution of this study lies in the novel perspective the dependability study is framed in. Starting from a quite classical availability analysis, the network dependability figures are incorporated into a very detailed service model that is used to analyze the overload effect GPRS has to face after outages, gaining deep insights on its impact on user's perceived QoS. The result of this modeling is an enhanced availability analysis, which takes into account not only the bare estimation of unavailability periods, but also the important congestion phenomenon following outages that contribute to service degradation for a certain period of time after operations resume.  相似文献   
945.
We propose a new Raman pump module that effectively reduces four-wave-mixing (FWM) nonlinear interaction among longitudinal pump modes and wavelength-division-multiplexed (WDM) signals in co-pumped distributed Raman amplifiers based on nonzero dispersion-shifted fibers (NZ-DSFs). Theory and experiments confirm that the proposed pump module structure, based on polarization- and wavelength-multiplexed Fabry-Perot lasers, allows distributed amplification with high co-propagating on-off Raman gain, providing a key technology for all-Raman-based dense-WDM ultralong-haul transmission.  相似文献   
946.
Fabrication of a thick strained SiGe layer on bulk silicon is hampered by the lattice mismatch and difference in the thermal expansion coefficients between Si and SiGe, and a high Ge content leads to severe strain in the SiGe film. When the thickness of the SiGe film is above a critical value (90 nm for 18% Ge), drastic deterioration of the film properties as well as dislocations will result. In comparison, a silicon-on-insulator (SOI) substrate with a thin top Si layer can mitigate the problems and so a thick SiGe layer with high Ge concentration can conceivably be synthesized. In the work reported here, a 110 nm thick high-quality strained Si0.82Ge0.18 layer was fabricated on an ultra-thin SOI substrate with a 30 nm top silicon layer using ultra-high vacuum chemical vapor deposition (UHVCVD). The thickness of the SiGe layer is larger than the critical thickness on bulk Si. Cross-sectional transmission electron microscopy (XTEM) reveals that the SiGe layer is dislocation-free and the atoms at the SiGe/Si interface are well aligned, even though X-ray diffraction (XRD) data indicate that the SiGe film is highly strained. The strain factors determined from the XRD and Raman results agree well.  相似文献   
947.
龚平  贾炜 《光子学报》1996,25(7):619-622
本文采用一种优化的硫化助熔剂方法合成了红外上转换材料,这种材料能够在室温下将红外光转换成可见光。这种新工艺在反应效率、生产成本、环境保护、工艺难度等方面均优于传统的热熔工艺。文章给出了红外上转换材料的激励光谱和发射光谱。  相似文献   
948.
A scenario is presented, in which the presence of a quantum critical point due to formation of incommensurate charge density waves accounts for the basic features of the high temperature superconducting cuprates, both in the normal and in the superconducting states. Specifically, the singular interaction arising close to this charge-driven quantum critical point gives rise to the non-Fermi liquid behavior universally found at optimal doping. This interaction is also responsible for d-wave Cooper pair formation with a superconducting critical temperature strongly dependent on doping in the overdoped region and with a plateau in the optimally doped region. In the underdoped region a temperature dependent pairing potential favors local pair formation without superconducting coherence, with a peculiar temperature dependence of the pseudogap and a non-trivial relation between the pairing temperature and the gap itself. This last property is in good qualitative agreement with so far unexplained features of the experiments.  相似文献   
949.
It is known that the set of twist points in the boundary of the von Koch snowflake domain has full harmonic measure. We provide a new, simple proof, based on the doubling property of the harmonic measure, and on the existence of an equivalent measure, invariant and ergodic with respect to the shift.

  相似文献   

950.
主要论述了自控系统采用UPS的必要性,以及SAUCRU PARALLEL SYSTEM(塞里克鲁并联系统)UPS在现场的具体应用。介绍了并联系统UPS的特性及其实现,现场外接旁路的设计与具体操作,以及日常维护中的问题。  相似文献   
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