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141.
Explicit analytic design rules are derived for both 3 dB and full adiabatic couplers. The design rules are in excellent agreement with numerical calculations using the beam propagation method (BPM). It is shown that the length scaling for 3 dB couplers compared to full couplers makes the former more difficult to design. The design for each case is optimized to obtain the upper limit of performance and a comparison is carried out between two different design geometries for both 3 dB and full adiabatic couplers  相似文献   
142.
We demonstrate multi-emitter Si/GexSi1-x n-p-n heterojunction bipolar transistors (HBT's) which require no base contact for transistor operation. The base current is supplied by the additional emitter contact under reverse bias due to the heavy doping of the emitter-base junction. Large-area HBT test structures exhibit good transistor characteristics, with current gain β≈400 regardless of whether the base current is supplied by a test base electrode or one of the emitter contacts. These devices have enhanced logic functionality because of emitter contact symmetry. Since device fabrication does not require base electrode formation, the number of processing steps can be reduced without significant penalty to HBT performance  相似文献   
143.
It is shown that the exact solution of the problem of convective heat exchange in a low-Prandtl-number fluid flow (Pr ? 1) can be obtained for a two-dimensional body of arbitrary shape provided that the conformal mapping relating the body contour with a circle is known. By way of example, the Joukowsky airfoil is considered.  相似文献   
144.
A model kinetic equation is constructed for the transport of a massless Bose gas. This equation is applied to solve the boundary value problem for the transport of radiation in the half-space occupied by a dispersive medium that is in local thermal equilibrium with the radiation. It is shown that the difference in temperature between the dispersive medium and the incident radiation substantially depends on the character of the scattering properties of the particles in the medium. Translated from Teoreticheskaya i Matematicheskaya Fizika, Vol. 111, No. 3, pp. 462–472, June, 1997.  相似文献   
145.
A three-dimensional finite-element method hybridized with the spectral/spatial domain method of moments is presented for the analysis of ferrite-tuned cavity-backed slot antennas. The cavity, which is partially filled with magnetized ferrite layers, is flush mounted on an infinite ground plane with possible dielectric or magnetic overlay. The antenna operates primarily in the ultrahigh-frequency band. The finite-element method is used to solve for the electric-field distribution inside the cavity, whereas the spectral-domain approach is used to solve for the exterior region. An asymptotic extraction of the exponential behavior of the Green's function followed by a spatial evaluation of the resulting integral is used to improve computational speed. Radar cross section, input impedance, return loss, gain, and efficiency of ferrite-tuned cavity-backed slots (CBS) are calculated for various biasing conditions. Numerical results are compared with experimental data  相似文献   
146.
We report the modulation characteristics of a waveguide-type optical frequency comb generator (WG-OFCG) with the advantages of compactness, high modulation index and low driving power. The characteristics of the optical frequency comb (OFC) generated when the modulation index exceeds 2π are discussed. The power of the modulation sidebands was measured by the optical heterodyne method with an external-cavity laser as a local oscillator. The dependence of the modulation index of the WG-OFCG on the modulation frequency up to 40 GHz was measured. The generation span of the OFC at the modulation frequency detuned from an integer multiple of the free spectral range (FSR) is discussed  相似文献   
147.
A new method to erase a standard (double-poly, stacked-gate NOR-type) flash cell is proposed. The method, still using the tunneling mechanism to extract electrons from the floating gate, is based on the concept of keeping the electric field constant during the whole erasing operation. The new method has two main advantages with respect to the conventional one: (1) it does not depend on the supply voltage variation and (2) it allows a better reliability in terms of endurance-induced stress. Results have shown that flash device performances are greatly improved in terms of stability and endurance reliability up to one million cycles  相似文献   
148.
A boron-doped diamond field emitter diode with ultralow turn-on voltage and high emission current is reported. The diamond field emitter diode structure with a built-in cap was fabricated using molds and electrostatic bonding techniques. The emission current versus anode voltage of the capped diamond emitter diode with boron doping, sp2 content, and vacuum thermal electric (VTE) treatment shows a very low turn-on voltage of 2 V. A high emission current of 1 μA at an anode voltage of less than 10 V can be obtained from a single diamond tip. The turn-on voltage is significantly lower than comparable silicon field emitters  相似文献   
149.
150.
Sampled-data techniques are used to examine the dynamic characteristics and closed-loop performance of the quasi-square-wave boost converter. Direct duty-ratio control and current-mode control are considered. With direct duty-ratio control, the system poles remain well damped under all load conditions, and there is no zero in the control-to-output transfer function. Good closed-loop performance is therefore achieved. Under current-mode control, the requirement for a stabilizing ramp is seen to depend on load conditions, and the achievable voltage control-loop bandwidth is smaller than that using direct duty-ratio control; however, there is a significant reduction in the magnitude of the DC source to output-voltage frequency response  相似文献   
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