Hydrogen indium vacancy complex VInH4 in n-type InP studied by positron-lifetime

Positron-lifetime experiments have been carried out on two undoped n-type liquid encapsulated Czochralski (LEC)-grown InP samples with different stoichiometric compositions in the temperature range 10-300 K. For temperatures below 120 K for P-rich InP and 100 K for In-rich InP, the positron average lifetime began to increase rapidly and then leveled off, which was associated with the charge state change of hydrogen indium vacancy complexes from (V_InH₄)⁺ to (V_InH₄)⁰. This phenomenon was more obvious in P-rich samples that have a higher concentration of V_InH₄. The transformation temperature of approximately 120 K suggests that the complex V_InH₄ is a donor defect and that the ionization energy is about 0.01 eV. The ionization of neutral V_InH₄ accounted for the decrease of the positron average lifetime when the sample was illuminated with a photon energy of 1.32 eV at 70 K. These results provide evidence for hydrogen complex defects in undoped LEC InP.     

核内核子－核子非弹散射截面（Ⅰ）

在与平均场、核内核子－核子弹性散射截面以及输运方程相统一的理论框架内推导了核内核子－核子非弹散射截面的解析表达式．其数值结果能很好地重现自由非弹截面的实验值，所计算的有效非弹截面与Ｄｉｒａｃ－Ｂｒｕｅｃｋｎｅｒ的计算结果相一致．     

B—ISDN宽带UNI信令点到多点配置的实现

本文根据ＩＴＵ－Ｔ最新的Ｑ．２９７１协议，以及笔者所从事的实际课题，提出一整套Ｂ－ＩＳＤＮ第三层ＵＮＩ信令的软件实现策略，其特点是能同时满足用户对点到点以及点到多点广播这两种通信方式的要求，而且可以动态配置。     

A Mössbauer spectroscopic study of an industrial catalyst for dehydrogenation of etylbenzene to styrene

Iron oxide catalyst with spinel structure used for dehydrogenation of ethylbenzene is one kind of important catalyst in petrochemical industry. In this work several series of industrial catalyst were prepared with different components and different manufacturing processes. Mössbauer Spectroscopy has been used to determine the optimal components and the better manufacturing process for spinel structure formation. The results may prove useful for producing the industrial dehydrogenation catalyst with better catalytic property.     

GaAs亚微米自对准工艺技术研究

总结了在５０ｍｍＧａＡｓ圆片上实现自对准介质膜隔离等平面工艺技术的研究，着重描述了离子注入、自对准亚微米难熔栅制备、钝化介质膜生长、干法刻蚀、电阻和电容制备等关键工艺的研究结果。这套工艺的均匀性、重复性好，在５０ｍｍＧａＡｓ圆片上获得了满意的成品率。采用这套工艺已成功地研制出多种性能良好的ＧａＡｓＩＣ和ＧａＡｓ功率ＭＥＳＦＥＴ，证明国家自然科学基金委员会这一重大课题的选择对发展我国ＧａＡｓＩＣ确实具有重大意义。     

NiCuZn铁氧体和银内电极的共烧行为

NiCuZn铁氧体正作为磁介质广泛地应用于低烧多层片式电感，因此有必要对其与银内电极的共烧行为进行研究。该文主要介绍NiCuZn铁氧体／银内电极多层复合体共烧过程中的烧结收缩、界面反应、扩散对介质性能的影响。尖晶石结构中存在相当数量的空位，这为银离子提供了一定的溶解度，因此在共烧过程中银对铁氧体的相组成影响较小。银对铁氧体性能的影响体现在两个方面。一方面是由于银具有相对低的烧结温度，从而在烧结过程中起到助烧剂的作用，促进致密化过程，提高烧结体的密度和磁导率；另一方面，银促使铁氧体中的铜在晶界处析出，导致晶界处应力，使磁导率降低，晶粒生长也被一定程度地抑制。     

基于遗传算法的图像边缘信息链表匹配技术

提出了一种基于遗传算法的图像边缘信息链表匹配方法。首先,采用CANNY算子的方法提取图像边缘;然后,将图像边缘信息链表化;最后,基于链表化结果利用遗传算法进行链表匹配。该方法能够减少匹配过程中的计算量,且能实现高效匹配。通过仿真实验,验证了该方法的性能。     

Difference in micellar properties of sodium dodecyl sulfonate from sodium 4-decyl naphthalene sulfonate in D2O solution studied by 1H NMR relaxation and 2D NOESY

¹H chemical shift changes of sodium 4-decyl naphthalene sulfonate (SDNS) at 313 K show that its critical micellar concentration lies between 0.82 and 0.92 mmol/dm³, which is in the same range as that of the previous study at 298 K. The spin–lattice relaxation time, spin–spin relaxation time and two-dimensional nuclear Overhauser enhancement spectroscopy experiments give information about the structure of the SDNS micelle and the dynamics of the molecules in the micelle. The size of the SDNS micelle remains almost unchanged in the temperature range from 298 to 313 K as deduced by analyzing the self-diffusion coefficient. Special arrangement of the naphthyl rings of SDNS in the micelles affects the packing of these hydrophobic chains. The methylene groups of the alkyl chain nearest the naphthalene groups penetrate into the aromatic region, which results in a more tightly packed hydrophobic micellar core than that of sodium dodecyl sulfonate.     

AOI技术在激光微孔产品检查中的应用

在过去几年里,小型PCB诸如硅芯片级以及便携式移动电话的生产者和设计者们已经发现:如果要保持自己的竞争力并具备生产高密度封装板能力,就必须采用微孔技术。微孔技术的出现要求针对微孔缺陷的有效检测手段对工艺进行过程控制。本文对激光微孔的自动光学检测进行了详细介绍。     

Miniaturized Hexagonal Stepped-Impedance Resonators and Their Applications to Filters

Miniaturized hexagonal stepped-impedance resonators and their applications to bandpass filters are presented. Based on the odd- and even-mode equivalent circuits, the resonance characteristics of these resonators are investigated. A series of circuit configurations, including the third-order Chebyshev, trisection, and fifth-order cascaded trisection filters, are constructed by the proposed resonators. These filters are very compact and have good stopband responses. Measured results validate the analysis and theoretical prediction with good agreement.