Effect of exponentially graded base doping on the performance ofGaAs/AlGaAs heterojunction bipolar transistors

The authors have fabricated n-p-n GaAs/AlGaAs heterojunction bipolar transistors (HBTs) with base doping graded exponentially from 5×10¹⁹ cm^-3 at the emitter edge to 5×10¹⁸ cm^-3 at the collector edge. The built-in field due to the exponentially graded doping profile significantly reduces base transit time, despite bandgap narrowing associated with high base doping. Compared to devices with the same base thickness and uniform base doping of 1×10¹⁹ cm^-3 , the cutoff frequency is increased from 22 to 31 GHz and maximum frequency of oscillation is increased from 40 to 58 GHz. Exponentially graded base doping also results ill consistently higher common-emitter current gain than uniform base doping, even though the Gummel number is twice as high and the base resistance is reduced by 40%     

Synthesis and adsorption properties of gold nanoparticles within pores of surface‐functional porous polymer microspheres

Mesoporous polymer microspheres with gold (Au) nanoparticles inside their pores were prepared considering their surface functionality and porosity. The Au/polymer composite microspheres prepared were characterized by transmission electron microscope (TEM), X‐ray diffraction (XRD), and Brunauer–Emmett–Teller (BET) techniques. The results showed that the adsorption of Au nanoparticles could be increased by imparting the pore structure and surface‐functional groups into the supporting polymer microspheres (in this study, poly (ethylene glycol dimethacrylate‐co‐acrylonitrile) and poly (EGDMA‐co‐AN) system). Above all, from this study, it was established that the porosity of the polymer microspheres is the most important factor that determines the distribution and adsorption amount of face‐centered cubic (fcc) Au nanoparticles in the final products. Our study showed that the continuous adsorption of Au nanoparticles with the aid of the large surface area and surface interaction sites formed more favorably the Au/polymer composite microspheres. The BET measurements of Au/poly(EGDMA‐co‐AN) composite microspheres reveals that the adsorption of Au nanoparticles into the pores kept the pore structure intact and made it more porous. © 2004 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 42: 5627–5635, 2004     

The effect of olefinic terminal chains on the mesomorphic properties of 4,4'-disubstituted diphenyldiacetylenes

New diphenyldiacetylenes of the type with A, B = H and/or F; m = 0, 1; n = 1-4; and X = C n H 2n + 1 , F, CF 3 or CN were synthesized and their mesomorphic properties determined by hot stage polarizing microscopy and DSC. When m = 0, all of these compounds showed only a nematic phase except when X = CF 3 when both nematic and smectic A phases were seen. Both clearing and melting temperatures were higher than those reported for substitution with the corresponding alkyl chains but the much larger increase in clearing temperatures produced considerably wider nematic phases. Eutectic mixtures of a few of these olefins yielded nematic materials also having much wider temperature ranges and higher clearing temperatures than the eutectic mixtures of the alkyl compounds, while retaining their high birefringence and low viscosities. Such materials are of interest for beam-steering devices.

Four of the diacetylenes with m = 1 ( A, B = H) were also prepared ( X = C 6 H 13 , F, n = 2, 3). When X was C 6 H 13 ( n = 2), the nematic range was smaller in the 2- than in the 1-olefin but wider than in the alkyl series. When X = F, either no nematic phase or a monotropic one was observed, whereas the 1-olefins gave a much wider nematic phase. Both transition temperatures were lower than those for the corresponding 1-olefin and alkyl analogues. The compound with X = C 6 H 13 and n = 2 had a melting temperature below room temperature.     

89-GHz fT room-temperature silicon MOSFETs

The authors report the implementation of deep-submicrometer Si MOSFETs that at room temperature have a unity-current-gain cutoff frequency (f_T) of 89 GHz, for a drain-to-source bias of 1.5 V, a gate-to-source bias of 1 V, a gate oxide thickness of 40 Å, and a channel length of 0.15 μm. The fabrication procedure is mostly conventional, except for the e-beam defined gates. The speed performance is achieved through an intrinsic transit time of only 1.8 ps across the active device region     

Computation of the average power pattern of a reflector antennawith random surface errors and misalignment errors

To specify manufacturing tolerances of a reflector antenna, various errors such as random surface errors and misalignment errors must be considered at one time because superposition of the effects of those errors may not hold. Based on the Rahmat-Samii's formulation (1983), a method for computing efficiently the average power pattern of a reflector antenna with those errors is presented. Simulation results show that superposition of the effects of errors does not generally hold and demonstrate how those errors degrade the peak-gain and sidelobe levels     

Preparation of enantiomerically pure (R)-2-butyryloxymethylglycidol by lipase-catalyzed asymmetric hydrolysis

Optically active epoxy alcohol, (R)-2-butyryloxymethylglycidol3 which is the precursor of a tert-alcohol chiral building block was obtained in high enantiomeric purity, 98.7% e.e., by lipase-catalyzed asymmetric hydrolysis using a phosphate buffer and organic co-solvent system in 95% of chemical yield.     

Reduction of loading effect by tungsten etchback in a magneticallyenhanced reactive ion etcher

The plug loading effect occurring during the etchback of tungsten was investigated in a magnetically enhanced reactive ion etcher using SF ₆/Ar mixtures. It was found that while the plug loading effect is independent of varying SF₆/Ar flow rate ratio and magnetic field intensity, it is reduced under the condition of high selectivity of tungsten relative to TiN which was achieved at high chamber pressure and low RF power. It is proposed that when TiN is used as a glue layer, the W etch rate enhancement in the plug is mainly controlled by a local loading effect. Under the optimized etchback conditions the plug loss was successfully controlled without the tungsten residue left on severe topology     

Phase-insensitive all-optical transistors based on second-ordernonlinearities

We demonstrate and compare two phase-insensitive all-optical transistors (AOT's) based on frequency-degenerate quadratic three-wave interactions. In particular, we demonstrate gain using KTP in a type II geometry. Both AOT's exploit the phase insensitivity inherent to three-wave parametric processes when only two fields are input, providing amplification of a small signal at the operating frequency via the interaction with a second-harmonic wave. The first scheme is based on successive up- and down-conversion (i.e., cascading) while the second relies on parametric down-conversion. We obtain gains of 5 and 160 in the two configurations, respectively, with a significant background and output coherent to the pump in the first case, no background and coherence between output and signal in the second     

Mode analysis of DFB SE lasers

This paper presents theoretical results on mode characteristics of surface-emitting (SE) lasers utilizing an active second-order grating section. Based on a coupled-mode approach, longitudinal modes and the associated space-harmonic transverse modes are calculated via a numerical technique. From these, the lasing-mode spectrum, near- and far-field patterns of the radiation mode, and the surface-emission power efficiency are obtained. Effects of the substrate reflector and the grating parameters are also investigated. Finally, comparisons are made with conventional, edge-emitting DFB lasers. The results indicate that with a suitable choice of structural parameter values, DFB SE lasers can be made to possess both the spectral discrimination of the conventional DFB lasers and the advantages of SE lasers at the same time and also that the second lowest longitudinal mode may be preferred over the fundamental longitudinal mode for many applications due to its symmetric field distribution     

Separation of screw-sensed particles in a homogeneous shear field

The Stokes motions of three-dimensional screw-sensed slender particles in a homogeneous shear field are investigated, including the effects of buoyancy. Conclusions are drawn about the possibility of achieving a separation of mixtures of right- and left-handed particles. The linearity of the Stokes equations allows complex flows to be solved by adding the effects of the several terms which describe the flow in which the particle is immersed. The homogeneous shear flow considered here consists of three such terms; solutions for a series of 12 unit motions are sufficient to determine the hydrodynamic resistance tensors. The forces and torques experienced by screw-sensed particles are calculated from these 51 resistance tensors, using slender-filament theory. The results allow an estimate of the range of buoyancy parameters for which gravitational sedimentation can be neglected. The fundamental component of the particle motion is a rotation, at approximately the same angular velocity as that of the fluid. Superimposed on this are variations, of large period, in the particle orientation. A phase plane analysis is used to find the terminal orientations. Very long calculation times are required for the phase portrait. An approximate method based on azimuthally-averaged equations is developed to avoid the requirements for long time integration.