塔里木盆地奥陶系碳酸盐岩热液蚀变类型及蚀变流体的分带特征

已探明塔里木盆地下古生界碳酸盐岩地层储量巨大。对塔里木盆地西北部柯坪-巴楚-阿图什一带的4块区域开展了系统的野外和重点观测工作,包括蓬莱坝剖面、柯坪水泥厂剖面、托普郎剖面等。本研究通过考察塔里木盆地奥陶系碳酸盐岩热液溶蚀及相关现象。从野外产状、伴生关系以及矿物岩石学特征角度解剖奥陶系地层中热液矿物组合的地质特征。研究表明,该区域存在富镁流体、富氟流体和富硫流体3种流体,分别来源于封存卤水、火成活动和TSR热液。不同性质流体蚀变具有相似的分带性。     

普遍的磁偏转三级象差系数以及它们与PI枪光栅图形的关系

本文将磁偏转三级象差的工作推广,使适用于电子束入射处就有磁场的情况,导出一个能在任意平面上求三级偏转象差的公式,并经过数学处理,使公式简洁、换算方便。最后运用这套象差系数就水平一列式电子枪(PI枪)经偏转后所产生的光栅图形进行了分析和探讨。     

渔网电磁超介质左手通带的超常透射及其电场增强效应的数值研究

本文利用电磁场数值模拟方法研究了分布矩形孔阵列的"金属-电介质-金属"三明治渔网电磁超介质在其左手通带发生的超常透射现象和不同模式激发下的电场增强效应。结果证实左手通带紧邻的超常光学传输峰源于波导共振模式,利用超常传输效应可以有效降低电磁超介质的损耗,提高左手性能;波导共振模和左手通带对应的反对称磁模能够分别在孔洞和金属夹层区域激发超过11倍的增强电场,因此渔网电磁超介质结构在表面增强光谱和传感等方面也具有潜在应用价值。     

平行光路方向运动的光栅多普勒效应及其在测微小位移中的应用

研究了光栅平行光路运动时产生的光的多普勒效应,用实验进行了验证,并将该原理应用到对微小位移量的检测中. 对原理进行了拓展,得到光栅以任意角度运动产生光的频移的普适公式.     

Characterization of different-Al-content AlGaN/GaN heterostructures on sapphire

Al x Ga 1-x N/GaN high-electron-mobility transistor (HEMT) structures with Al composition ranging from x = 0.13 to 0.36 are grown on sapphire substrates by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The effects of Al content on crystal quality, surface morphology, optical and electrical characteristics of the AlGaN/GaN heterostructures have been analyzed. Although high Al-content (36%) heterostructure exhibits a distinguished photoluminescence peak related to recombination between the two-dimensional electron gas and photoexcited holes (2DEG-h), its crystal quality and rough surface morphology are poor. 2DEG mobility increases with the Al content up to 26% and then it apparently decreases for high Al-content (36%) AlGaN/GaN heterostructure. The increase of sheet carrier density with the increase of Al content has been observed. A high mobility at room temperature of 2105 cm 2 /V s with a sheet carrier density of n s = 1.10 × 10 13 cm -2 , for a 26% Al-content AlGaN/GaN heterostructure has been obtained, which is approaching state-of-the-art for HEMT grown on SiC. Sheet resistance as low as 274 Ω/□ has also been achieved.     

连续太赫兹激光透射扫描成像实验研究

太赫兹成像可用于安检、反恐和工业生产等领域,已成为研究热点。由于连续太赫兹激光源体积较小、操作简单,因此,近几年对连续太赫兹激光成像的研究越来越多。基于C02激光泵浦甲醇气体生成的118．83μm激光,采用室温单元探测器、二维位移平台、聚乙烯透镜、光阑和计算机等器件组成的扫描透射成像系统对物体进行了成像实验,比较分析了扫描步长分别为1mm和0．5mm的成像结果。实验结果表明,由于增加光阑,实际成像功率下降,但此套成像系统在激光输出功率约为20mW时,仍成像清晰,且步长为0．5mm的成像效果更好。     

被动式DMFC水滴积聚及对放电性能影响

本文结合恒电流放电时阴极水滴积聚过程,对影响被动式直接甲醇燃料电池恒流放电性能的甲醇浓度、电流密度及环境湿度等因素进行了实验研究及讨论。结果表明:甲醇浓度高于4 M时,阴极水淹所造成的氧气传输限制为电池放电时间的控制因素;低电流密度放电时,恒电流放电时间主要受阴极侧水淹的影响;高电流密度时,主要受甲醇消耗的影响;湿度越大越易引起阴极水淹。     

Mei Adiabatic Invariants Induced by Perturbation of Mei Symmetry for Nonholonomic Controllable Mechanical Systems

Two types of Mei adiabatic invariants induced by perturbation of Mei symmetry for nonholonomic controllable mechanical systems are reported. Criterion and restriction equations determining Mei symmetry after being disturbed of the system are established. Form and existence condition of Mei adiabatic invariants are obtained.     

Band Structures of Metal-Oxide Capped Graphene： A First Principles Study

We perform a first-principles calculation based on density functional theory to investigate the interface between single layer graphene and metal oxides. Our study reveals that the monolayer graphene becomes semiconducting by single crystal SiO2 and Al2O3 contact, with energy gaps to - 0.9 and - 1.8 eV, respectively. We find the gap originates from the breakage of π bond integrity, whose extent is related to the interface atom configuration. We believe that our results highlight a promising direction for the feasibility to apply large scale graphene layers as building blocks in future electronics devices.     

Influence of O2 Flux on Compositions and Properties of ITO Films Deposited at Room Temperature by Direct-Current Pulse Magnetron Sputtering

Indium tin oxide （ITO） films were deposited on glass substrates at room temperature by dc pulse magnetron sputtering. Varying 02 flux, ITO films with different properties are obtained. Both x-ray diffractometer and x-ray photoelectron spectrometer are used to study the change of crystalline structures and bonding structures of ITO films, respectively. Electrical properties are measured by four-point probe measurements. The results indicate that the chemical structures and compositions of ITO films strongly depend on the O2 flux. With increasing O2 flux, ITO films display better crystallization, which could decrease the resistivity of films. On the contrary, ITO films contain less O vacancies with increasing O2 flux, which could worsen the conductive properties of films. Without any heat treatment onto the samples, the resistivity of the ITO film could reach 6.0 × 10^-4 Ω·cm, with the optimal deposition parameter of 0.2 scem O2 flux.