Microstrip reflectarray antenna with offset feed

The authors derive and verify the concept of antenna focusing by a planar 'microstrip reflectarray' antenna. Experimental results from schematically distributed patch radiators with microstrip delay lines are consistent with the simulation results. The advantages and disadvantages of such an antenna are described. The measured overall antenna efficiency is approximately 48% at scan angles up to 30 degrees . These results demonstrate the feasibility of such an antenna.<>     

A hybrid wafer-dicing process for GaAs MMIC production

A dicing process for GaAs MMIC (monolithic microwave integrated circuit) wafers using spin-on wax for wafer mounting and a hybrid process of wet chemical etching/mechanical sawing for chip dicing is described. This process minimizes ragged chip edges and reduces generation of microcracks in addition to the elimination of the plated gold burrs on the backside of the diced MMIC chips. This process gives a uniformity of -3 μm across a 2-in wafer following the completion of the whole backside process. This GaAs chip dicing technique is amenable to production because it exhibits both a very high chip yield (>90%) and nearly flawless edges     

四论注入光敏器件的物理基础

叙述了从现象的发现到理论分析，然后用实验进行验证，最后利用这个现象研制成注入光敏器件的全过程，从而证明注入光敏器件有牢靠的物理基础。本文还分析了文献（１￣５，１０）中的几个主要不同论点及欠妥的讨论方法。     

Analysis and implementation of cross sync period underwater acoustical positioning techniques for underwater targets

I.IlltroductionWhenanactiveunderwateracousticalpositioningsystemissearchingforanunderwatertarget,itisnecessaryforittocompleteatransmittingandreceivingcycIewithineachworkingperiodinordertofindoutthelocationofthetargetcorrectly.Forexample,whenanunder-wateracoustica1synchronouspositioningsystemistrackinganunderwatertargetwithagivensynchr0nizingperiod,thepropagati0ntimeofthepositioningsignaltravellingfr0mthetaJrgettothearrayofthesystemshouldbelessthanthesynchronizingperiod0therwisetargetdis-tance…     

Theory of gain in quantum-wire lasers grown in V-grooves

Theoretical calculations of gain, refractive index change, differential gain, and threshold current for GaAs-AlGaAs quantum-wire lasers grown in V-shaped grooves are presented. The theoretical model is based on the density-matrix formalism with intraband relaxation, and the subband structure is calculated within the effective bond-orbital model. For the quantum-wire geometry treated, agreement with the observed subband spacings is found. Because of the small overlap of the optical field with the active region for a single quantum wire, lasing threshold is reached only when several subbands are filled     

An efficient numerical approach, for determining the dispersioncharacteristics of dual-mode elliptical-core optical fibers

Based on vectorial formulations which combine the surface integral equation method and the finite-element method, a novel numerical approach is proposed for calculating the dispersion coefficients of dual-mode elliptical-core fibers with arbitrary refractive index profiles. By differentiating the original formulations involving the propagation constant β and the guided mode fields H_x and H_y once and twice with respect to the normalized frequency V, the new formulations for {dβ/dV, dH_x/dV, dH_y/dV} and for {d²β/dV², d² H_x/dV², d²H_y/dV² } are obtained respectively. Once {β, H_x, H_y } is solved through the eigenvalue procedure which dominates the computing time, only a few matrix manipulations are required to obtain {dβ/dV, dH_x/dV, dH_y/dV} and {d²β/dV², d²H_x/dV² , d²H_y/dV²}. Some numerical examples are examined to see the influence of different refractive index distributions with dips on the dispersions of the four nondegenerate LP ₁₁ modes for elliptical-core fibers     

A CMOS differential buffer amplifier with accurate gain andclipping control

A CMOS fully differential buffer amplifier with accurate gain and clipping control is presented. The gain is made variable by controlling the amount of the feedback around the power amplifier by means of an additional gain control loop. A new clipping technique is used to control the clipping level of the amplifier. The amplifier is realized in a 1.2 μm CMOS process with a single 5 V power supply. Measurements confirm the presented techniques     

Recent advances in theory and applications of scrambling techniquesfor lightwave transmission

This paper discusses recent advances in the theory and applications of scrambling techniques for digital lightwave transmission. It introduces the theories of sequence space and shift register generator (SRG) space which enable systematic analysis and mathematical manipulation of the behavior of sequences in general and the related SRG's. It discusses the behavior and realization of frame synchronous scrambling (FSS) and distributed sample scrambling (DSS) with emphasis on parallel sequences and the related parallel SRG's (PSRG). In addition, it describes self synchronous scrambling (SSS). Then the paper applies the theories to today's lightwave transmission systems by demonstrating practical parallel designs of FSS for SDH/SONET transmission, DSS for cell-based ATM transmission, and SSS for SDH-based ATM transmission. It finally considers how DSS can be used for scrambling of mixed isochronous and nonisochronous data in future high-speed data networks. The paper employs various new concepts and terminology, such as PSRG engine, generating vector discrimination matrix, (M,N) PSRG, sampling vector, correction vector, correction matrix, predictable scrambling concurrent sampling, and immediate correction     

Low-temperature growth of silicon-boron layer as solid diffusionsource for polysilicon contacted p+-n shallow junction

A new material, Si-B, is proposed as a solid diffusion source for fabrication of poly-Si contacted p⁺-n shallow junctions. The junction depth of the Si-B source diode has been measured and compared with that of a BF₂⁺-implanted poly-Si source diode. It was found that the Si-B source diode had a much shallower junction and was less sensitive to thermal budget than the BF₂⁺ source diode. This was attributed to the smaller surface concentration and diffusivity of boron in the silicon in Si-B source diodes. Regarding electrical characteristics of diodes with a junction depth over 500 Å, a forward ideality factor of better than 1.01 over 8 decades and a reverse-current density lower than 0.5 nA/cm² at -5 V were obtained. As the junction depth shrank to 300 Å, the ideality factor and reverse current density of diodes increased slightly to 1.05 and 1.16 nA/cm², respectively. These results demonstrated that a uniform ultrashallow p⁺-n junction can be obtained by using a thin Si-B layer as a diffusion source     

Statistical computer-aided design for microwave circuits

A useful methodology for microwave circuit design is presented. A statistical technique known as Design of Experiments is used in conjunction with computer-aided design (CAD) tools to obtain simple mathematical expressions for circuit responses. The response models can then be used to quantify response trade-offs, optimize designs, and minimize circuit variations. The use of this methodology puts the designer's intelligence back into design optimization while making “designing for circuit manufacturability” a more systematic and straightforward process. The method improves the design process, circuit performance, and manufacturability. Two design examples are presented in context to the new design methodology