Tl2Ba2Ca2Cu3Oy超导体磁通钉扎能的分布

描述一种测量高温超导体磁通钉扎能U₀及其分布的新方法,此方法主要之点是测量磁化后样品的零场临界电流随时间的变化,利用这一方法测量Tl₂Ba₂Ca₂Cu₃O_y的U₀值分布(T=78K)。根据所得结果,对已报道的U₀值的分散性提出一种新解释。 关键词：     

关于M序列的自相关函数的一点注记

本文讨论了Ｍ序列的自相关性，并证明了：当０＜｜ｔ－２＾ｎ－１｜≤［ｎ－１／２］时，｜ＣＭ（ｔ）｜≤２＾ｎ－１。     

Skeleton chain coding for Chinese characters

The compression of Chinese characters is very important for Chinese office automation and desktop publishing. In this paper, various methods are used to compress 13,051 Chinese characters losslessly by coding their skeleton points. The skeleton points are composed of isolated points and curves. To trace every point in a curve once and consecutively is a NP problem. Therefore, we use contour path following and revisiting algorithms to trace skeleton curves with chain codes. The remaining isolated skeleton points are encoded by an Elias code. Our coding method has a better compression rate than that of conventional skeleton coding.     

InGaN/GaN MQW p–n junction photodetectors

InGaN/GaN multiquantum well (MQW) p–n junction photodetectors with semi-transparent Ni/Au electrodes were fabricated and characterized. It was found that the fabricated InGaN/GaN MQW p–n junction photodetectors exhibit a 20 V breakdown voltage and a 3.5 V forward 20 mA turn on voltage. It was also found that the photocurrent to dark current contrast ratio is higher than 10⁵ when a 0.4 V reverse bias was applied to the InGaN/GaN MQW p–n junction photodetectors. Furthermore, it was found that the maximum responsivity was 1.28 and 1.76 A/W with a 0.1 and 3 V applied reverse bias, respectively.     

完全可分的三元系TS(v,4)的支撑集

§ 1　 IntroductionA triple system of order v and indexλ,denoted by TS(v,λ) ,is a collection of3- ele-mentsubsets Aof a v- set X,so thatevery 2 - subsetof X appears in preciselyλ subsets of A.L etλ≥ 2 and (X,A) be a TS(v,λ) .If Acan be partitioned into t(≥ 2 ) parts A1,A2 ,...,Atsuch that each (X,Ai) is a TS(v,λi) for 1≤ i≤ t,then (X,A) is called de-composable.Otherwise it is indecomposable.If t=λ,λi=1for 1≤ i≤ t,the TS(v,λ) (X,A) is called completely decomposable.It …     

接入网蓄电池的维护以及对整流器的要求

该针对阀控密封铅酸蓄电池的特性和使用环境，较全面的论述了接入网点蓄电池的选型要求与维护方式。     

A 4/7 kHz audio bandwidth selectable digital phone interface (DPI)chip with on-chip analog functions and modem

The Digital Phone Interface (DPI) is designed for a new generation of digital telephone terminals for private exchanges, This circuit gives a total solution for all telephone functions, thereby including DSP functions, voice coding/decoding and analog front end, signal generators for DTMF and ringing, a modem for data transfer between terminal and exchange and a multitude of interfaces to communicate to the external world. Besides the normal earpiece micro and speaker, handsfree operation is available by using a selectable input low-noise microphone amplifier and an additional 50 Ω mWLS driver. For the handsfree operation, a digital AGC and anti-oscillation (anti-larsen) function is implemented. The line modem generates a modified RTZ (WAL2) code and is able to cover distances up to 1.5 km. In addition, the component is extensible with external signal processing modules (echo cancelling) and is also able to transfer a 7 kHz speech bandwidth. The device is a mixed analog/digital design produced in a 1.2 μm CMOS technology on 46 mm ² die area and consumes 200 mW     

Effects of hot carrier induced interface state generation insubmicron LDD MOSFET's

A two-dimensional numerical simulation including a new interface state generation model has been developed to study the performance variation of a LDD MOSFET after a dc voltage stress. The spatial distribution of hot carrier induced interface states is calculated with a breaking silicon-hydrogen bond model. Mobility degradation and reduction of conduction charge due to interface traps are considered. A 0.6 μm LDD MOSFET was fabricated. The drain current degradation and the substrate current variation after a stress were characterized to compare the simulation. A reduction of the substrate current at V_g ≃0.5 V_d in a stressed device was observed from both the measurement and the simulation. Our study reveals that the reduction is attributed to a distance between a maximum channel electric field and generated interface states     

Pd-Ge contact to n-GaAs with the TiW diffusion barrier

Pd-Ge based ohmic contact to n-GaAs with a TiW diffusion barrier was investigated. Electrical analysis as well as Auger electron spectroscopy and the scanning electron microscopy were used to study the contact after it was subjected to different furnace and rapid thermal annealing and different aging steps. All analyses show that TiW can act as a good barrier metal for the Au/Ge/Pd/n-GaAs contact system. A value of 1.45 × 10⁻⁶ Ω-cm² for the specific contact resistance was obtained for the Au/TiW/Ge/Pd/n-GaAs contact after it was rapid thermally annealed at 425°C for 90 s. It can withstand a thermal aging at 350°C for 40 h with its ρ_c increasing to 2.94 × 10⁻⁶Ω-cm² and for an aging at 410°C for 40 h with its ρ_c increasing to 1.38 × 10⁻⁵ Ω-cm².     

Integration of mobile vehicles for automated material handlingusing Profibus and IEEE 802.11 networks

This paper focuses on a method to integrate mobile devices such as a mobile robot, automated guided vehicle, and unmanned container transporter to form an automated material handling system. In this paper, the stationary devices are connected via a Profibus network while the mobile devices are communicating via an IEEE 802.11 wireless LAN. In order to integrate these two networks, a protocol converter is developed on a PC platform that runs two interacting processes with shared internal buffers. The protocol converter performs a role of translator between two different protocols by converting the format of a data frame. In addition to this basic conversion function, the protocol converter has a virtual polling algorithm to reduce the uncertainty involved in accessing the wireless network. Finally, the integrated network. of Profibus and IEEE 802.11 is experimentally evaluated for its data latency and throughput, which shows the feasibility of the Profibus-IEEE 802.11 network for industrial applications involving mobile devices