Enhanced Field Emission from Large-Area Arrays of W18O49 Pencil-Like Nanostructure

Field enhancement and field screening are two major factors affecting field emission performance of arrays of quasi one-dimensional nanostructures. We have observed enhanced field emission from large-area arrays of W₁₈O₄₉ pencil-like nanostructure due to both the effects of high aspect ratio and enlarged spacing between neighboring nanostructures. These arrays may be grown on silicon substrates by the multi-step thermal evaporation process. The spacing of nanotip-to-nanotip between neighboring nanostructures may be increased by adjusting the growth temperature. The arrays are observed to have a typical turn-on field as low as about 1.26 MV/m and a threshold field as low as about 3.39 MV/m, resulting in increasing field enhancement and decreasing field screening effect.     

Cluster Observation of Eelectrostatic Solitary Waves around Magnetic Null Point in Thin Current Sheet

Electrostatic solitary waves （ESWs） are observed in the vicinity of the magnetic null of the widely studied magnetic reconnection taking place at the near-earth tail when current sheet becomes dramatic thinning during substorm time on 1 October 2001. We use the Imada method for the 2-D reconnection model and study the characteristics of ESWs near the X-line region and the magnetic null points. The result shows that the amplitude of the observed ESWs in the vicinity of X-line region ranges from 0.1mV/m to 5mV/m, and the amplitude is larger near the magnetic null points. The generation mechanism and the role of ESWs associated with magnetic reconnection are also discussed.     

Co-occurrence of Dominant Direct and Indirect Transitions in Low Temperature Sputtered Indium Tin Oxide Thin Films on Polymers

Indium tin oxide （ITO） layers are prepared on polymethylmethacrylate and polyethylene terephthalate by rf- magnetron sputtering at room temperature. Their 3D-AFM images and visible transmittance spectra are contrastively characterized and studied. An interesting morphological effect of the polymer substrates on their top ITO layers is observed. Dominant direct and indirect transition types deduced from optical spectra are surprisingly found in ITO films on different polymers. Furthermore, qualitative band structures are figured, and some theoretical discussions about the correlation of optical band structure, interface/surface morphology and carrier density are also presented.     

FM-AM Conversion Induced by Polarization Mode Dispersion in Fiber Systems

The conversion of the frequency modulated pulse induced from frequency modulation （FM） to amplitude modulation （AM） by the polarization mode dispersion （PMD） is theoretically and experimentally investigated. When there is no polarizer at the output end of a fiber system, the amplitude modulation depth is stable by 8%. Random amplitude modulation is observed when a polarizer is placed at the output end of the fiber system. The observed minimum and maximum modulation depths in our experiment are 5% and 80%, respectively. Simulation results show that the amplitude modulation is stable by 4% induced mainly by group velocity dispersion （GVD） when there is no polarizer, and the amplitude modulation depth displays the random variation character induced by the GVD and PMD. Lastly, a new fiber system scheme is proposed and little amplitude modulation is observed at the top of the output pulse.     

Electrical Property of Infrared-Sensitive InAs Solar Cells

InAs infrared-sensitive solar cells are fabricated by using the films grown by the liquid phase epitaxy technique. The film microstructures are characterized by x-ray diffraction and scanning electronic microscopy. The current-voltage characteristics of the solar cells in the dark and under AM1.5 illumination at 300 K and 77 K are discussed. The conversion efficiency of p-InAs/n-sub InAs cells decreases when the thickness of the p-type film changes from 1.7 μm to 3.5 μm, which is caused by the reduced effective photons near p？n junction. The p-InAs/n-InAs/n-sub InAs solar cell with the conversion efficiency of 7.43% in 1-2.5 μm under AM1.5 at 77 K is obtained. The short circuit current density increases dramatically with decreasing temperature due to the weakened effect of phonon scattering.     

Quantum Mechanical Study on Tunnelling and Ballistic Transport of Nanometer Si MOSFETs

Using self-consistent calculations of million-atom SchrSdinger-Poisson equations, we investigate the I-V characteristics of tunnelling and ballistic transport of nanometer metal oxide semiconductor field effect transistors （MOSFET） based on a full 3-D quantum mechanical simulation under nonequilibtium condition. Atomistic empirical pseudopotentials are used to describe the device Hamiltonian and the underlying bulk band structure. We find that the ballistic transport dominates the I-V characteristics, whereas the effects of tunnelling cannot be neglected with the maximal value up to 0.8mA/μm when the channel length of MOSFET scales down to 25 nm. The effects of tunnelling transport lower the threshold voltage Vt. The ballistic current based on fully 3-D quantum mechanical simulation is relatively large and has small on-off ratio compared with results derived from the calculation methods of Luo et al.     

苯甲醇分子HOMO和N-HOMO轨道的电子动量谱学研究

利用第三代电子动量谱仪研究了苯甲醇(C_6H_5CH_2OH)分子的最高占据轨道(HOMO)和次最高占据轨道(N-HOMO)电子动量谱,给出了外价轨道的电离能谱信息.实验在非共面对称几何条件下完成,入射电子的能量为2400 eV加结合能.通过密度泛函方法计算得到了苯甲醇分子最高和次最高占据轨道的动量谱,理论与实验结果符合较好.     

MAl_(12)(M=Ni、Mn)及其阴离子团簇的几何结构和磁性的计算研究

采用密度泛函理论(density functional theory,DFT)中的广义梯度近似(generalized gradient approximation,GGA)分别对Al_(13)和MAl_(12)(M=Ni、Mn)四种初始结构的中性和一价阴离子团簇进行计算研究.发现中性和阴离子团簇的基态几何结构均保持I_h对称性,并且基态阴离子团簇还具有较高的运动学稳定性.电磁性质计算显示:基态的中性和阴离子NiAl_(12)团簇分别带有2_(μB)、3_(μB)的磁矩,Ni原子的磁性几乎完全淬灭;而MnAl_(12)团簇分别带有7_(μB)、6_(μB)的磁矩,Mn原子的磁矩主要由3d轨道提供.基态团簇的表面原子出现了自旋分裂,与中心原子呈现出铁磁性作用.对垂直电离能和垂直亲和能的分析表明:中心原子被替代之后,团簇的得电子能力和失电子能力都有所降低.     

浅谈PCB企业人力资源的管理

文章简要地介绍了通过不断地完善人力资源的管理,有效地营造和谐的人才成长氛围,使得员工在企业中最大限度地发挥各自的聪明才智,让他们在企业中有个安全感和归属感,这样也就留住了人心,人员流动率也得到了有效控制,为企业不断提高生产效率,降低生产成本,为确保产品质量的稳定和提升提供了有力保障,为铸就诚信企业奠定了坚实基础。     

对称环境下安全协议组件的安全属性分析

文章基于一种模块化的安全协议设计方法,定义了基本消息和基件的概念后,从研究安全协议的基件开始,将不同的基件适当复合后可得到具有特殊安全属性的组件,并运用BAN类逻辑对这些组件进行了形式化的分析。这些具有特殊安全属性的组件,在满足协议需求的同时,从底层开始保证了协议能够达到预期的安全目标,为安全协议的设计奠定了基础。