实时操作系统DSP/BIOS在DSP开发中的应用

本文介绍了RTOS(实时操作系统)DSP／BIOS在DSP的开发设计中的应用。在简述了DSP的一般模型后，论述了RTOS在DSP／BIOS外设管理，实时性能分析以及程序流程控制中的应用。     

数字化正弦平方脉冲信号

依据正弦平方脉冲的数学方程及其频谱分布，分别导出了与理想和标称视频带宽相对应的正弦平方脉冲的数学表达式及其编程生成方法。实验表明，此法不仅精确，而且便于修改参数，并可直接读人数字电视系统，来测定视频线性响应。     

Windows2000设备驱动程序即插即用的实现

概述了Windows2000即插即用系统组成及其实现过程,结合实例介绍了Windows2000设备驱动程序如何支持用户即插即用的功能。     

Surface of Ru/Fe2O3 catalysts used in water-gas shift reaction studied by auger electron spectrometry

Summary Carbon deposits on the surface ofRu/Fe₂O₃ catalysts used in the water-gas shift reaction have been investigated by Auger Electron Spectrometry. A correlation has been found between the thickness of the carbon deposit and the catalytic activity in WGSR. The carbon deposit covers the metallic active centers and blocks their contact with reagents. The dotting of the iron oxide support with sodium has been found to reduce the amount of carbon deposit. .      

基于两层均匀媒质的GPEN SAR地下目标成像方法及其性能分析

地表穿透合成孔径雷达(Ground PENetration SAR,GPEN SAR)为了探测掩埋在地下的目标,通常工作在多层媒质的环境中。传统成像模型是建立在同一均匀媒质的假设上,不再适合于GPEN SAR的实际情况。本文首先建立了两层分区均匀媒质中的成像模型,然后利用后向投影(BP)算法定量分析了成像几何参数、土壤参数等对成像的影响,进而提出了一种修正的后向投影(MBP)算法。MBP算法不仅能够校正两层分区均匀媒质对成像定位的影响,还能估计目标的掩埋深度,提供目标三维位置坐标。仿真结果验证了MBP算法在不同信噪比环境下,对多目标的三维定位精度能满足实际的需要。     

焊膏印刷工艺参数的选择与优化

表面贴装工艺流程的关键工序之一就是焊膏印刷,其工艺控制的好坏直接影响着装配的线路板的质量。通过对印刷工艺参数的分析,利用试验设计的方法来找出关键工艺参数,并加以优化设定,从而为控制工序参数奠定基础。     

人工免疫原理在网络入侵检测系统中的研究

文章分析了人工免疫系统的原理,简单建立了一种基于否定选择算法的网络入侵检测系统,引入了一种用于异常事件识别的r-字符块匹配规则,并对规则存在的漏洞进行了分析。     

干涉型激光直写技术用于光盘防伪

利用作者研制的干涉型激光直写系统，阐述了干涉型激光直写设计OVD的方法，防伪特征，介绍了应用于光盘防伪的OVD技术和应用前景，给出了实验结果。     

Fabrication of Schottky barrier MOSFETs using self-assembly CoSi2 nanopatterning and spacer gate technologies

A self-assembly patterning method for generation of epitaxial CoSi₂ nanostructures was used to fabricate 50 nm channel-length MOSFETs. The transistors have either a symmetric structure with Schottky source and drain or an asymmetric structure with n⁺-source and Schottky drain. The patterning technique is based on anisotropic diffusion of Co/Si atoms in a strain field during rapid thermal oxidation. The strain field is generated along the edges of a mask consisting of 20 nm SiO₂ and 300 nm Si₃N₄. During rapid thermal oxinitridation (RTON) of the masked silicide structure, a well-defined separation of the silicide layer forms along the edge of the mask. These highly uniform gaps define the channel region of the fabricated device. The separated silicide layers act as metal source and drain. A poly-Si spacer was used as the gate contact. The asymmetric transistor was fabricated by ion implantation into the unprotected CoSi₂ layer and a subsequent out-diffusion process to form the n⁺-source. I–V characteristics of both the symmetric and asymmetric transistor structures have been investigated.     

He-Ne激光自混合干涉的模式研究

对一般He—Ne激光和频率分裂激光器中偏振态相互垂直的o光和e光的自混合于涉的模式进行了研究，发现了单模变三模的现象，并进行了解释。