Superconductivity in the 100–120 K region in oxides of the Tl-Ca-Ba-Cu-O system

Oxides with different cation ratios 2122, 2212, 2213 and 2223 in the Ti-Ca-Ba-Cu-O system exhibit onset of superconductivity in the 110–125 K range with zero-resistance in the 95–105 K range. Electron microscopic studies show dislocations, layered morphology and other interesting features. These oxides absorb electromagnetic radiation (9.11 GHz) in the superconducting phase.     

2D-3D transformation of layered perovskites through metathesis: synthesis of new quadruple perovskites A2La2CuTi3O12 (A = Sr, Ca)

We describe the synthesis of two new quadruple perovskites, Sr(2)La(2)CuTi(3)O(12) (I) and Ca(2)La(2)CuTi(3)O(12) (II), by solid-state metathesis reaction between K(2)La(2)Ti(3)O(10) and A(2)CuO(2)Cl(2) (A = Sr, Ca). I is formed at 920 degrees C/12 h, and II, at 750 degrees C/24 h. Both the oxides crystallize in a tetragonal (P4/mmm) quadruple perovskite structure (a = 3.9098(2) and c = 15.794(1) A for I; a = 3.8729(5) and c = 15.689(2) A for II). We have determined the structures of I and II by Rietveld refinement of powder XRD data. The structure consists of perovskite-like octahedral CuO(4/2)O(2/2) sheets alternating with triple octahedral Ti(3)O(18/2) sheets along the c-direction. The refinement shows La/A disorder but no Cu/Ti disorder in the structure. The new cuprates show low magnetization (0.0065 micro(B) for I and 0.0033 micro(B) for II) suggesting that the Cu(II) spins are in an antiferromagnetically ordered state. Both I and II transform at high temperatures to 3D perovskites where La/Sr and Cu/Ti are disordered, suggesting that I and II are metastable phases having been formed in the low-temperature metathesis reaction. Interestingly, the reaction between K(2)La(2)Ti(3)O(10) and Ca(2)CuO(2)Cl(2) follows a different route at 650 degrees C, K(2)La(2)Ti(3)O(10) + Ca(2)CuO(2)Cl(2) --> CaLa(2)Ti(3)O(10) + CaCuO(2) + 2KCl, revealing multiple reaction pathways for metathesis reactions.     

Radiochemical neutron activation analysis of chromium in biological materials using ion chromatography with “on-line” yield determination

The use of ion chromatography with continuous UV detection for radiochemical separation of Cr with simultaneous yield determination is presented. The RNAA method consists of sample destruction in HNO₃+HClO₄, extraction of Cr(VI) with tribenzylamine in CHCl₃, backextraction in NaOH and chromatography of chromate. From radiotracer experiments, the ratio of signals for⁵¹Cr and Cr spike was found to be constant for a chromium mass range of 15 to 100 g. Application of the RNAA method to Cr determination in biological reference materials showed a reasonable agreement with the reference values. A relative standard deviation of 3% on the 100 g/kg level for homogeneous material was achieved.IAEA-fellow, on leave from the Philippine Nuclear Research Institute Philippine     

A channel resistance derivative method for effective channel lengthextraction in LDD MOSFETs

A channel resistance derivative method for extracting the electrical effective channel length and series resistance is proposed, and demonstrated on an advanced 0.35 μm LDD CMOS technology. A clear graphic image of the L_EFF and R_SD is obtained directly from the measured channel resistance and its derivative with respect to the gate bias. The method also provides guidelines for the proper gate bias range selection in traditional L_EFF extraction techniques     

A total resistance slope-based effective channel mobilityextraction method for deep submicrometer CMOS technology

A simple yet effective total resistance slope-based method for extracting the effective channel mobility in deep submicrometer CMOS technology is developed. Using the slope of the measured total resistance versus mask length, the series resistance is removed from the measured total resistance, and mobility is extracted without involving the effective channel length. The new method facilitates mobility extraction in situations where the effective channel length is difficult to extract, such as in lightly-doped-drain (LDD) devices or at low temperatures. The new method also allows the series resistance to be any function of the gate bias, making the mobility extraction in LDD devices easier and more accurate     

A 4.2-ps ECL ring-oscillator in a 285-GHz fMAX SiGetechnology

This letter reports on the room temperature operation of a conventional SiGe bipolar ECL ring oscillator with a minimum stage delay of 4.2 ps for ~250 mV single ended voltage swing. To our knowledge, this is the lowest reported delay for a gate fabricated using transistor devices. The circuit uses 0.12 × 2 μm² emitter size SiGe n-p-n transistors with a room temperature f_T of 207 GHz and f_MAX (unilateral gain extrapolation) of 285 GHz. The ring oscillator was studied as a function of various device and circuit parameters and it was found that minimum delay is more dependent on the parasitic resistance and capacitance in the n-p-n device than on pure transit time across the device     

一种用于增加制程范围的新型FFS液晶显示器件结构

FFS(fringing field switching)技术作为三大主流广视角液晶显示技术之一,与IPS/VA相比有高开口率的优势。然而由于其存储电容易受制程偏移的影响而较容易产生显示不均,因此在制造过程中对设备精度要求十分严格。本文介绍一种新的FFS器件结构,能很大程度上降低由于制程偏移造成的显示不均。