分布式并行数据挖掘计算框架及其算法研究

为了提供一个灵活可扩展的计算平台进行高效的挖掘计算，提出了一种应用于分布和并行环境的数据挖掘计算框架和相应的算法。通过分析关联规则挖掘理论和以往算法的优缺点，建立一种分布式并行数据挖掘的计算框架，并给出相应的求解算法。实例分析表明该计算框架能够减少节点问的通信开销，保持了良好的可扩展性：挖掘算法则利用本地节点动态有序集合枚举树生成方法代替数据库节省了本地空间的占用．大大提高了查找的计算效率。     

钝化膜提高GaN基LED光提取效率研究

模拟计算了光的入射角度与反射率的关系,当光的入射角度大于23°时,发生全反射,无论是否在器件表面生长增透膜,这时的光都无法从器件顶部出射表面提取出来。研究了使用等离子体增强化学气相沉积法(PECVD)在已经制备了n电极和p电极的GaN基LED上制备钝化膜,分析了SiON和SiN_x膜沉积对于器件的光输出功率的影响。通过实验证明,在器件上沉积SiON后,光输出功率增加。     

分光光度法测定蒙药中痕量铅

采用双硫腙显色分光光度法测定蒙药中痕量铅,该方法具有简单、快速、灵敏等特点,用以测定蒙药中的痕量铅,获得了满意的结果.该方法线性范围为0.00-0.40μg/mL Pb2 ,相关系数0.9993.回收率95%-ll0%.     

航空胶片冲洗机直流电机调速控制系统设计

针对航空胶片冲洗机控制困难表现其电机负载不均匀，低速运行情况下电机震动剧烈．研制了专用的反馈控制系统．以双89C51单片机为核心组成控制电路，编写了系统操作程序和数字PID控制程序．对PID参量对控制系统稳定性的影响进行了分析，得出适应于本系统的PID控制规律，并经过大量的试验，获得了能使各档速度稳定运行下的PID控制参量．实践表明，该控制系统运行稳定可靠，低速控制准确度在3％以内，中高速准确度达到1％．     

Effect of p-doping on the temperature dependence of differentialgain in FP and DFB 1.3-μm InGaAsP-InP multiple-quantum-well lasers

The temperature dependence of differential gain dG/dn for 1.3-μm InGaAsP-InP FP and DFB lasers with two profiles of p-doping was obtained from RIN measurements within the temperature range of 25°C-65°C. Experiments showed that the change of the active region doping level from 3·10¹⁷ cm^-3 to 3·10¹⁸ cm^-3 leads to a 50% increase of the differential gain for FP lasers at 25°C. Heavily doped devices also exhibit more rapid reduction of the differential gain with increasing temperature. The effect of active region doping on the energy separation between the electron Fermi level and electronic states coupled into the laser mode explains the observations. The temperature dependence of differential gain for DFB devices strongly depends on the detuning of the lasing wavelength from the gain peak     

非线性抛物型偏积分微分方程的H1-Galerkin 混合有限元方法

收稿给出一类非线性抛物型偏积分微分方程的H1-Galerkin混合有限元方法.给出了一维空间的半离散、全离散格式及最优阶误差估计,并将该方法推广到二维和三维空间.     

单倍型异基因造血干细胞-脐带间充质干细胞联合移植治疗1例急性白血病

目的研究急性粒细胞白血病异基因造血干细胞-人脐带源间充质干细胞（hUG—MSC）联合移植效果。方法急性髓性白血病-M2,供者为其胞兄,HLA单倍型相合,移植物为经粒细胞集落刺激因子（Granulocyte Clony—Stimulating Factor,G—CSF）动员的骨髓以及外周血造血干细胞,加入分离、扩增的hUC—MSC。移植物抗宿主病（Graft—Versus—Host Disease,GVHD）预防采用环孢菌素A＋ATG^＋霉酚酸酯＋短程甲氨喋呤和CD25单抗。结果输注供者的MSC总数和CD34细胞数分别为7．92×10^8/L和3．78×10^6／L。中性粒细胞大于0．5×10^9／L和血小板大于20×10^9／L的时间分别为14d和15d。24d嵌合体100％,40d左右出现Ⅰ度aGVHD,治疗后好转,未出现其他严重并发症。结论异基因造血干细胞-人脐带源间充质干细胞（hUC—MSC）联合移植安全简便,可加速造血功能恢复。     

Sparse asymptotic minimum variance based bearing estimation algorithm for a single vector hydrophone

For underwater target detection using a single vector hydrophone, sparse asymptotic minimum variance(SAMV) method is used to estimate the target bearing. The SAMV discretizes the entire scanning space and the target bearing is located at the position of the discrete direction. The SAMV algorithm utilizes the sparsity of the spatial signal to improve the estimation performance of the target bearing. Background noise level(BNL) of the bearing estimation of SAMV algorithm is lower than those of the conventional beam forming(CBF)method and minimum variance distortionless response(MVDR) method for different signal noise ratios(SNRs). When the SNR is higher than 0 d B, the direction-finding error of this algorithm is less than 2°. Moreover, the SAMV algorithm has a better dimensional orientation resolution capability. The experimental results show that the SAMV algorithm gives a bearing and time recording map with a lower BNL, which effectively verifies the effectiveness of SAMV algorithm in terms of underwater target detection.     

离子交换色谱法分离测定磷霉素的研究

分别采用全多孔型硅胶基键合强阴离子交换柱与氨丙基键合硅胶柱，在低波长 ２００ ｎｍ 处检测，分离测定了磷霉素 探讨了流动相条件，如ｐ Ｈ 值、离子强度等对磷霉素保留及分离选择性的影响，优化分离条件，建立了一种测定磷霉素的高效液相色谱新方法方法简便、快速     

Temperature performance of 1.3-/spl mu/m InGaAsP-InP lasers with different profile of p-doping

Temperature dependencies of the threshold current, device slope efficiency, and heterobarrier electron leakage current from the active region of InGaAsP-InP multiquantum-well (MQW) lasers with different profiles of acceptor doping were measured. We demonstrate that the temperature sensitivity of the device characteristics depends on the profile of p-doping, and that the variance in the temperature behavior of the threshold current and slope efficiency for lasers with different doping profiles cannot be explained by the change of the measured value of the leakage current with doping only. The entire experimental data can be qualitatively explained by suggesting that doping ran affect the value of electrostatic band profile deformation that affects temperature sensitivity of the output device characteristics. We show that doping of the p-cladding/SCH layer interface in InGaAsP-InP MQW lasers leads to improvement of the device temperature performance.