Effect of oxygen deficit and nonuniform distribution of technological impurities on the dielectric properties of Y3Fe5O12 crystals

The experimental and calculated values of the optical permittivity ε_∞ have been analyzed and generalized with allowance for the oxygen concentration and possible valences of Fe and O ions in YIG single crystals. It is shown that the deficit of oxygen ions in the samples is accompanied by a decrease in ε_∞. A decrease in the gradient of distribution of Ba ions over the sample thickness decreases the difference between the calculated and experimental values. It is revealed that the ratio of the number of valence electrons to the number of core electrons, with regard to their polarizabilities, is proportional to the ratio of the incoherent and coherent X-ray scattering intensities, nk/k.     

Parametric oscillations and stability of systems with large modulation coefficient

We study parametric oscillations of linear systems with one degree of freedom for large values of the modulation coefficient. We use the classical analytic Lyapunov-Poincaré perturbation methods and an original numerically-analytic method of accelerated convergence to construct periodic solutions and the corresponding eigenvalues. We find the boundaries of stability and instability domains. We use specific models to illustrate the main properties of parametric oscillations of systems with singular character of the perturbation dependence on the modulation coefficient. We consider periodic boundary value problems for the modified Mathieu equation and the Kochin equation modeling crankshaft torsional vibrations and show that there are significant differences between weakly and essentially perturbed periodicmotions both for the lowest and arbitrary oscillation modes. We also describe the unusual properties of the boundaries in the domain of the system determining parameters.     

Buckling of a stiff thin film on a compliant substrate in large deformation

A finite-deformation theory is developed to study the mechanics of thin buckled films on compliant substrates. Perturbation analysis is performed for this highly nonlinear system to obtain the analytical solution. The results agree well with experiments and finite element analysis in wavelength and amplitude. In particular, it is found that the wavelength depends on the strain. Based on the accurate wavelength and amplitude, the membrane and peak strains in thin films, and stretchability and compressibility of the system are also obtained analytically.     

Thermodynamic parameters of urethane formation reactions and concomitant processes

Thermodynamic parameters of reactions of methyl and phenyl isocyanates with a series of compounds were determined by quantum-chemical calculations. The products of these reactions model for various functional groups present in commercial polyurethanes. The thermodynamic stability series for compounds formed from aliphatic and aromatic isocyanates were constructed.     

Influence of the composition of the polymer matrix on the electrooptical properties of films with a dispersed liquid crystal

Polymer films with a dispersed liquid crystal were prepared by photopolymerization of (meth)acrylic monomers. The electrooptical properties of these films were studied. The influence exerted by the composition of the monomer mixture, cross-linking agents, and chain-transfer agent on the liquid crystal drop size and on the transmission of the polymer-liquid crystal films was examined.     

Electrohydrodynamic instability in some nematic cyanobiphenyls in an a.c. electric field

Electrohydrodynamic instability in homeotropically oriented nematic samples of 4'-n-octyl-4-cyano-biphenyl and 4'n-alkyloxy-4-cyanobiphenyl, (n = 8.9) have been studied in an a.c. electric field. The domain patterns during the instability in these compounds in a very low frequency a.c. field are very similar to those in a d.c. field. The domain patterns observed at higher frequencies have been identified as 'maltese crosses' or 'crossed isogyres'. The electro-convective 'isotropic' flows near the electrode play an important role in the observed instability.     

Performance analysis of information dissemination by flooding

Performance properties are established for the dissemination by flooding of a database that is initially distributed among the nodes of a communications network. An example of this general process is the dissemination of network status information as a component of the adaptive routing mechanism in a network like Arpanet. Bounds are given on the progress of the dissemination process at a sequence of times before the completion of the process, whereas earlier results only bounded the time until completion. The present bounds further extended earlier analysis by treating the diameter explicitly as a parameter. Specialized versions of the bounds are given for k-connected networks. The bounds yield a recognition property whereby a node can recognize that it has received the entire database without having a priori knowledge of the size of the database. An earlier assumption about a fixed time for correct message transmission over any edge is relaxed to assume only an upper bound on these transmission times     

Hot-carrier reliability of 20V MOS transistors in 0.13 μm CMOS technology

This paper presents results of reliability investigation of 20 V N-Drift MOS transistor in 0.13 μm CMOS technology. Due to high performances required for CMOS applications, adding high voltage devices becomes a big challenge to guarantee the reliability criteria. In this context, new reliability approaches are needed. Safe Operating Area are defined for switch, V_ds limited and V_gs limited applications in order to improve circuit designs. For V_ds limited applications, deep doping dose effects in drift area are investigated in correlation to lifetime evaluations based on device parameter shifts under hot carrier stressing. To further determine the amount and locations of hot carriers injections, accurate 2D technological and electrical simulations are performed and permit to select the best compromise between performance and reliability for N-Drift MOS transistor.