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991.
The goal of this letter is to present a model to compute a quality-of-service (QoS) index to characterize IP services. Then, we show how such a score may be used in a clear and flexible way for defining advanced usage-based tariff criteria to charge QoS guaranteed network services to address the dynamics of the expected future telecommunications scenario. 相似文献
992.
El-Dib D.A. Elmasry M.I. 《IEEE transactions on circuits and systems. I, Regular papers》2004,51(2):371-378
In this paper, a new implementation of the Viterbi decoder (VD), based on a modified register-exchange (RE) method, is proposed. Conceptually, the RE method is simpler and faster than the trace-back (TB) method. However, the disadvantage of the RE method is that every bit in the memory must be read and rewritten for each bit of information decoded. The proposed implementation adopts the "pointer" concept: a pointer is assigned to each register. Instead of copying the contents of one register to another, the pointer which points to the first register is altered to point to the second register. Power-dissipation, performance, memory size, and the speed of the survivor sequence management are analyzed for both the TB method, and the proposed RE method. The analysis indicates an average power reduction of 23% for the new VD, compared to the power dissipation of the VD described in the literature for the third generation of wireless applications. The bit-error rate is 10/sup -5/ with a signal-to-noise ratio of approximately 6.3 dB for a continuous, uncontrolled encoded sequence. Moreover, the memory requirements of the new implementation are reduced by half. All the read and write operations in the survivor sequence management are executed at the data rate frequency which increases the maximum frequency. 相似文献
993.
Arnaud C. Feron P. Boustimi M. Grosso P. Bosc D. Guignard P. 《Electronics letters》2003,39(17):1249-1250
Numerical results on polymer surrounded by an air micro-ring coupled to waveguides are presented. The FDTD method predicts a filter width of 1.4 nm and an extraction efficiency of almost 80% for a gap of 0.15 /spl mu/m. 相似文献
994.
S Kaliyugavaradan 《电子设计技术》2003,10(12):84
基于电阻的传感器,如应力规和压阻器件,常用于测量多种物理参数.对于使用数字处理器或微控制器进行数据采集和信号处理的设备来说,传感器的响应必须表现为一种适合于转换成数字格式的形式.把这类传感器的电阻变化转换成一个与之成比例的频率或时间间隔是可取的,所以你就能用一个计数器或定时器来方便地得到数字形式的输出信号.图1所示电路把传感器的电阻RS线性地转换成与之成比例的时间间隔.这一电路实际上是一个张驰振荡器,由一个电流源、一个桥式放大器、一个比较器和一个触发器组成.电流IS分成两路,分别通过R1和R2,就如同这两个电阻并联在一起一样.假定运算放大器是理想放大器,则当RX(R4+RS)大于R1R3/R2时,该电路就起一个振荡器的作用. 相似文献
995.
Ionizing-Radiation Response of the GaAs/(Al, Ga)As PHEMT: A Comparison of Gamma- and X-ray Results 总被引:1,自引:0,他引:1
D. V. Gromov V. V. Elesin S. A. Polevich Yu. F. Adamov V. G. Mokerov 《Russian Microelectronics》2004,33(2):111-115
An experiment is reported on the effect of 60Co gamma rays or 45-keV x-ray photons on the GaAs/(Al, Ga)As PHEMT. It is shown that x-ray treatment can improve the dc performance of the device in some cases. This finding is attributed in part to the annealing or modification of DX centers. 相似文献
996.
The results of studying the dose dependences of the decay kinetics of phosphorescence excited by X-ray radiation in luminescent ZnS-Cu ceramic material before and after irradiation with 50-MeV protons are considered. An anomalous variation in the exponent of the hyperbolic phosphorescence curves was observed experimentally as the accumulated light sum increased. It is found from an analysis of the data obtained that two processes are involved in the decay: one of these is monomolecular and corresponds to the first-order kinetics; the other is bimolecular and corresponds to the second-order kinetics. Transitions of charge carriers delocalized from traps occur at the nonradiative-recombination centers induced by proton radiation. Recombination of these charge carriers at the emission centers in the course of decay is described by the second-order kinetics. 相似文献
997.
Rao R. Srivastava A. Blaauw D. Sylvester D. 《Very Large Scale Integration (VLSI) Systems, IEEE Transactions on》2004,12(2):131-139
We develop a method to estimate the variation of leakage current due to both intra-die and inter-die gate length process variability. We derive an analytical expression to estimate the probability density function (PDF) of the leakage current for stacked devices found in CMOS gates. These distributions of individual gate leakage currents are then combined to obtain the mean and variance of the leakage current for an entire circuit. We also present an approach to account for both the inter- and intra-die gate length variations to ensure that the circuit leakage PDF correctly models both types of variation. The proposed methods were implemented and tested on a number of benchmark circuits. Comparison to Monte Carlo simulation validates the accuracy of the proposed method and demonstrates the efficiency of the proposed analysis method. Comparison with traditional deterministic leakage current analysis demonstrates the need for statistical methods for leakage current analysis. 相似文献
998.
High-power 1320-nm wafer-bonded VCSELs with tunnel junctions 总被引:8,自引:0,他引:8
V. Jayaraman M. Mehta A.W. Jackson S. Wu Y. Okuno J. Piprek J.E. Bowers 《Photonics Technology Letters, IEEE》2003,15(11):1495-1497
A new long-wavelength vertical-cavity surface-emitting laser structure is described that utilizes AlGaAs-GaAs mirrors bonded to AlInGaAs-InP quantum wells with an intracavity buried tunnel junction. This structure offers complete wavelength flexibility in the 1250-1650 nm fiber communication bands and reduces the high free-carrier losses and bonded junction voltage drops in previous devices. The intracavity contacts electrically bypass the bonded junctions to reduce threshold voltage. N-type current spreading layers and undoped AlGaAs mirrors minimize optical losses. This has enabled 134/spl deg/C maximum continuous-wave lasing temperature, 2-mW room-temperature continuous-wave single-mode power, and 1-mW single-mode power at 80/spl deg/C, in various devices in the 1310-1340 nm wavelength range. 相似文献
999.
1000.
This paper provides an integrative literature review of the research on the impact of the public funding of basic research, extending previous work done at the Science Policy Research Unit (SPRU), University of Sussex, East Sussex, UK. "Impact" is measured in terms of publications, patents, new drugs, employment, and new start-up companies. The primary focus of this paper is on empirical studies of the impact of biomedical research. However, a few key theoretical papers and empirical papers with a broader industrial focus are also reviewed to provide a more complete perspective. Conclusions, including an alternative view that basic research need not be public supported, and future research opportunities in this area are also discussed. 相似文献