Sensorless speed measurement using current harmonic spectralestimation in induction machine drives

This paper proposes a sensorless speed measurement scheme that improves the performance of transducerless induction machine drives, especially for low-frequency operation. Speed-related harmonics that arise from rotor slotting and eccentricity are analyzed using digital signal processing. These current harmonics exist at any nonzero speed and are independent of time-varying parameters, such as stator winding resistance. A spectral estimation technique combines multiple current harmonics to determine the rotor speed with more accuracy and less sensitivity to noise than analog filtering methods or the fast Fourier transform. An on-line initialization routine determines machine-specific parameters required for slot harmonic calculations. This speed detector, which has been verified at frequencies as low as 1 Hz, can provide robust, parameter-independent information for parameter tuning or as an input to a sensorless flux observer for a field-oriented drive. The performance of the algorithm is demonstrated over a wide range of inverter frequencies and load conditions     

Computer-intensive methods in statistical analysis

As far back as the late 1970s, the impact of affordable, high-speed computers on the theory and practice of modern statistics was recognized by Efron (1979, 1982). As a result, the bootstrap and other computer-intensive statistical methods (such as subsampling and the jackknife) have been developed extensively since that time and now constitute very powerful (and intuitive) tools to do statistics with. This article provides a readable, self-contained introduction to the bootstrap and jackknife methodology for statistical inference; in particular, the focus is on the derivation of confidence intervals in general situations. A guide to the available bibliography on bootstrap methods is also offered     

Multi-emitter Si/GexSi1-x heterojunctionbipolar transistor with no base contact and enhanced logic functionality

We demonstrate multi-emitter Si/Ge_xSi_1-x n-p-n heterojunction bipolar transistors (HBT's) which require no base contact for transistor operation. The base current is supplied by the additional emitter contact under reverse bias due to the heavy doping of the emitter-base junction. Large-area HBT test structures exhibit good transistor characteristics, with current gain β≈400 regardless of whether the base current is supplied by a test base electrode or one of the emitter contacts. These devices have enhanced logic functionality because of emitter contact symmetry. Since device fabrication does not require base electrode formation, the number of processing steps can be reduced without significant penalty to HBT performance     

Comparison of mismatch error shaping in multibit oversampledconverters

A number of mismatch error-shaping schemes for oversampled DACs are compared. Simulation results are presented to show that such a comparison should take account of the distribution of the mismatch errors, since the pattern of errors present affects different algorithms in different ways. A scheme for improving the error tolerance of one mismatch shaping architecture is presented     

Short-pulse, eye-safe Nd:YAG laser using cavity-dumping

A short-pulse 1.444-μm laser based on Nd:YAG technology has been demonstrated. The 1.444-μm is eye-safe. With the cavity-dump technique, a pulse of 50 m× and 14 ns was obtained. The beam quality was excellent with an M² of 1.6 by the use of a telescopic resonator. Silicon-window polarizers were used to suppress the 1.06-μm radiation but showed 1.444-μm absorption as well     

Radiation and scattering from ferrite-tuned cavity-backed slotantennas: theory and experiment

A three-dimensional finite-element method hybridized with the spectral/spatial domain method of moments is presented for the analysis of ferrite-tuned cavity-backed slot antennas. The cavity, which is partially filled with magnetized ferrite layers, is flush mounted on an infinite ground plane with possible dielectric or magnetic overlay. The antenna operates primarily in the ultrahigh-frequency band. The finite-element method is used to solve for the electric-field distribution inside the cavity, whereas the spectral-domain approach is used to solve for the exterior region. An asymptotic extraction of the exponential behavior of the Green's function followed by a spatial evaluation of the resulting integral is used to improve computational speed. Radar cross section, input impedance, return loss, gain, and efficiency of ferrite-tuned cavity-backed slots (CBS) are calculated for various biasing conditions. Numerical results are compared with experimental data     

Linear crosstalk in 4×4 semiconductor optical amplifier gateswitch matrix

We report a comprehensive crosstalk investigation of a packaged InGaAsP/InP 4×4 semiconductor optical amplifier gate switch matrix, experimentally as well as theoretically. For a fully loaded switch with the same wavelength on all four inputs, all possible switching combinations are analyzed, thus yielding realistic crosstalk figures. Coherent and incoherent crosstalk phenomena are identified, and a switch crosstalk less than -40 dB has been measured     

A new erasing method for a single-voltage long-endurance flashmemory

A new method to erase a standard (double-poly, stacked-gate NOR-type) flash cell is proposed. The method, still using the tunneling mechanism to extract electrons from the floating gate, is based on the concept of keeping the electric field constant during the whole erasing operation. The new method has two main advantages with respect to the conventional one: (1) it does not depend on the supply voltage variation and (2) it allows a better reliability in terms of endurance-induced stress. Results have shown that flash device performances are greatly improved in terms of stability and endurance reliability up to one million cycles     

Ultralow-voltage boron-doped diamond field emitter vacuum diode

A boron-doped diamond field emitter diode with ultralow turn-on voltage and high emission current is reported. The diamond field emitter diode structure with a built-in cap was fabricated using molds and electrostatic bonding techniques. The emission current versus anode voltage of the capped diamond emitter diode with boron doping, sp² content, and vacuum thermal electric (VTE) treatment shows a very low turn-on voltage of 2 V. A high emission current of 1 μA at an anode voltage of less than 10 V can be obtained from a single diamond tip. The turn-on voltage is significantly lower than comparable silicon field emitters