A superconducting X-ray spectrometer with a tantalum absorber andlateral trapping

We report the development of Nb-Ta-Al-Al₂O₃-Al superconducting tunnel junction structures for high energy resolution and high efficiency X-ray detection. These devices utilize a Ta X-ray absorber with superconductor “bandgap engineered” quasiparticle trapping to improve charge collection. Experimental results at 0.3 K are presented, showing energy resolution of 102 eV full-width-half-maximum for 6 keV X-rays. Collected charge is in excess of 5×10⁶ electrons. The absorption efficiency is better than 35%. Devices thermally cycle with no change in characteristics     

Deep submicron CMOS based on silicon germanium technology

The advantages to be gained by using SiGe in CMOS technology are examined, Conventional MOSFETs are compared with SiGe heterojunction MOSFETs suitable for CMOS technology and having channel lengths between 0.5 and 0.1 μm. Two-dimensional computer simulation demonstrates that the improved mobility in the SiGe devices, due to higher bulk mobility and the elimination of Si/SiO₂ interface scattering by the inclusion of a capping layer, results in significant velocity overshoot close to the source-end of the channel. The cut-off frequency, f_t , is found to increase by around 50% for n-channel devices while more than doubling for p-channel devices for typical estimates of mobility. The results offer the prospect of a more balanced CMOS and improved circuit speed especially when using dynamic logic     

Aqueous solution and solid state interactions of lanthanide ions with a methacrylic ester polymer bearing pendant 15‐crown‐5 moieties

The interaction between trivalent lanthanide ions and poly(1,4,7,10,13‐pentaoxacyclopentadecan‐2‐yl‐methyl methacrylate), PCR5, in aqueous solution and in the solid state have been studied. In aqueous solution, evidence of a weak interaction between the lanthanides and PCR5 comes from the small red shift of the Ce(III) emission spectra and the slight broadening of the Gd(III) EPR spectra. From the Tb(III) lifetimes in the presence of H₂O and D₂O the loss of one or two water coordinated molecules is confirmed when Tb(III) is bound to PCR5. An association constant of the order of 200 M^?1 was obtained for a 1:1 (lanthanide:15‐crown‐5) complex from the shift of the polymer NMR signals induced by Tb(III). A similar association constant is obtained from the differences of the molar conductivity of Ce(III) solution at various concentrations in presence and absence of PCR5. When Tb(III) is adsorbed on PCR5 membranes, lifetime experiments in H₂O and D₂O confirm the loss of 5 or 6 water coordinated molecules indicating that in solid state the lanthanide(III)‐PCR5 interaction is stronger than in solution. The adsorption of Ce(III) in PCR5 membranes shows a Langmuir type isotherm, from which an equilibrium constant of 39 M^?1 has been calculated. SEM shows that the membrane morphology is not much affected by lanthanide adsorption. Support for lanthanide ion–crown interactions comes from ab initio calculations on 15‐crown‐5/La(III) complex. © 2007 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 45: 1788–1799, 2007     

RZ-DPSK signal regeneration based on dual-pump phase-sensitive amplification in fibers

All-optical regeneration of differential phase-shift keying signals by means of a phase-sensitive amplification scheme solely based on highly efficient four-wave mixing in fibers is theoretically and numerically studied. The analytical and numerical investigation demonstrates almost ideal phase regeneration accompanied with enhanced amplitude noise suppression in the regime of pump depletion.     

Solution-Processed n-Type Organic Field-Effect Transistors With High on /off Current Ratios Based on Fullerene Derivatives

Solution-processed n-type organic field-effect transistors (OFETs) based on the fullerene derivative {6}-1-(3-(2- thienylethoxycarbonyl)-propyl)-{5}-l-phenyl-[5,6]-C61 (TEPP) and phenyl-C61-butyric acid methyl ester (PCBM) in a multiring source/drain structure are reported. Devices with TEPP show high electron mobility up to 7.8 x 10^-2 cm²/Vs in the saturation regime for bottom-contact OFETs with Au S/D electrodes with a solution-processed fullerene derivative. The ON/OFF ratios reported in this letter, which are in the range of 10⁵ -10⁶, are among the highest values reported for such devices. This mobility is always higher compared to PCBM devices prepared in identical conditions. The mobility of TEPP and PCBM increased with increasing temperatures in the range of 100-300 K with activation energy of 78 and 113 meV, respectively, which suggests that the thermally activated hopping of electrons is dominant in TEPP.     

On Critical Stability of Three Quantum Charges Interacting Through Delta Potentials

We consider three one-dimensional quantum, charged and spinless particles interacting through delta potentials. We derive sufficient conditions which guarantee the existence of at least one bound state.     

Butyltins in california river and lake marina waters

Butyltins were analyzed in waters from California river and lake marinas and were detected at the part per trillion (ppt) level in most locations. The tributyltin:dibutyltin (TBT/DBT) ratios in the fresh waters were similar to those in their saline counterparts indicating like rates of degradation in the two salinity regimes.     

A VLSI CMOS delay oriented waveform converter for polyphasefrequency synthesizer

In this paper, we present a waveform converter implemented on a 0.25-μm CMOS technology using a dedicated design methodology (Delay Oriented Design). The circuit converts a square wave signal in both in-phase and quadrature-phase sinusoidal differential outputs. It also multiplies the frequency by seven. The output frequency range of this converter extends from 1.05 GHz up to 2.17 GHz. This converter is dedicated for the design of a third-generation mobile phone synthesizer using a double-loop architecture. For an output frequency of 2 GHz, the measured phase noise at 10-kHz offset from the carrier is -97 dBc/Hz. The circuit consumes 50 mW from a 2.5-V supply